MP6T2

MP6T2 Transistors Medium Power Transistor (−32V, −2A) MP6T2 Applications Low frequency amplifier Dimensions (Unit : mm) MPT6 (6) (5) (4) Features 1) Low VCE(sat), VCE(sat) = −0.5V(Typ.) (IC / IB = −2A / −0.2A) 2) Contain two 2SB1188-dies in a package. (1) (2) (3) Structure PNP silicon epitaxial planar transistor Packaging specifications Package Type Code Basic ordering unit(pieces) MP6T2 Taping TR 1000 Inner circuit (6) (5) (4) (1) Emitter (2) Base (3) Collector (4) Emitter (5) Base (6) Collector (1) (2) (3) Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous Pulsed Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP ∗1 PD ∗2 Tj Tstg Limits −40 −32 −5 −2.0 −2.5 2.0 1.4 150 −55 to +150 Unit V V V A A W / TOTAL W / ELEMENT °C °C ∗1 ∗2 Pw=10ms 1 Pulse Mounted on a ceramic board Rev.A 1/3 MP6T2 Transistors Electrical characteristics (Ta=25°C) Parameter Collector-Emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut off current Emitter cut off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat)∗ hFE fT Cob Min. −32 −40 −5 − − − 120 − − Typ. − − − − − −500 − 100 50 Max. − − − −1.0 −1.0 −800 390 − − Unit V V V µA µA mV − MHz pF IC= −1mA IC= −50µA IE= −50µA VCB= −20V VEB= −4V IC/IB= −2.0A/−200mA VCE= −3V, IC= −500mA VCE= −5V, IE= 500mA, f=100MHz VCB= −10V, IE=0A, f=1MHz Conditions ∗ Pulsed Electrical characteristics curves VCE= −3V −0.5 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (A) −0.4 −200 −100 −50 −20 −10 −5 −2 −1 −1.75mA DC CURRENT GAIN : hFE −1000 Ta=100°C 25°C −500 −40°C Ta=25°C −2.5mA 500 −2.25mA Ta=25°C VCE= −6V −3V −1V −2mA −1.5mA −1.25mA −1mA −750µA −500µA 200 −0.3 100 −0.2 50 −0.1 −250µA 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2 BASE TO EMITTER VOLTAGE : VBE (V) 0 0 −0.4 −0.8 −1.2 IB=0A −1.6 −2 20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded Emitter Propagation Characteristics Fig.2 Grounded Emitter Output Characteristics Fig.3 DC Current Gain vs. Collector Curren ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 500 Ta=100°C 25°C −25°C 200 VCE= −3V −500 Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) −500 lC/lB=10 DC CURRENT GAIN : hFE −200 −200 −100 −50 100 −100 IC/IB=50 Ta=100°C 25°C −40°C 50 −50 20 10 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 −20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC Current Gain vs. Collector Current ( ) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( ) Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current ( ) Rev.A 2/3 MP6T2 Transistors COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) BASE SATURATION VOLTAGE : VBE(sat)(V) TRANSITION FREQUENCY : fT (MHz) Ta=25°C −1 IC /IB=10 −0.5 500 Ta=25°C VCE= −5V 300 200 100 50 Cib Ta=25°C f=1MHz IE=0A IC=0A Cob 200 100 −0.2 −0.1 −0.05 20 10 50 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 COLLETOR CURRENT : IC (mA) 5 10 20 50 100 200 500 1000 2000 −0.5 −1 −2 −5 −10 −20 −30 EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Base-Emitter Saturation Voltage vs. Collector Current Fig.8 Gain Bandwidth Product vs. Emitter Current Fig.9 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage Normalized Transient Thermal Resistance : r(t) 10 COLLECTOR CURRENT : IC ( A) 10 Ta=25℃ 100ms 10ms 1ms 1 -1 DC 0.1 -0.1 Ta=25℃ Single Pulse 0.01 0.001 0.01 0.1 1 10 100 - 0.01 -0.1 1000 1 - - 10 - 100 Pulse width : Pw(s) COLLECTOR TO EMITTER VOLTAGE : VCE ( V) Fig.10 Normalized Thermal Resistance (Element) Fig.11 Safe Operating Area (Tr1 & Tr2) Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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