MP6X1

MP6X1 Transistors Medium Power Transistor (32V, 1A) MP6X1 Applications Low frequency amplifier Dimensions (Unit : mm) MPT6 (6) (5) (4) Features 1) Low VCE(sat), VCE(sat) = 0.15V(Typ.) (IC / IB = 500mA / 50mA) 2) Contain two 2SD1664-dies in a package. (1) (2) (3) Structure NPN silicon epitaxial planar transistor Packaging specifications Package Type Code Basic ordering unit (pieces) MP6X1 Taping TR 1000 Inner circuit (6) (5) (4) (1) EMITTER (2) BASE (3) COLLECTOR (4) EMITTER (5) BASE (6) COLLECTOR (1) (2) (3) Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous Collector current Pulsed Power dissipation Junction temperature Range of storage temperature ICP PD Tj Tstg ∗1 Symbol VCBO VCEO VEBO IC Limits 40 32 5 1 2 2.0 1.4 150 −55 to +150 Unit V V V A A W / TOTAL W / ELEMENT °C °C ∗2 ∗1 Pw=10ms 1Pulse ∗2 Mounted on a ceramic board Rev.A 1/3 MP6X1 Transistors Electrical characteristics (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance ∗ Pulsed Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob ∗ ∗ Min. 32 40 5 − − − 120 − − Typ. − − − − − − − 150 15 Max. − − − 500 500 400 390 − − Unit V V V nA nA mV − MHz pF IC=1mA IC=50µA IE=50µA VCB=20V VEB=4V Conditions IC/IB=500mA/50mA VCE=3V, IC=100mA VCE=5V, IE=−50mA, f=100MHz VCB=10V, IE=0A, f=1MHz Electrical characteristics curves 500 500 COLLECTOR CURRENT : IC(mA) VCE=6V Ta=100°C 2.5mA 400 4.5mA 300 3.0mA 3.5mA 4.0mA Ta=25°C 2.0mA DC CURRENT GAIN : hFE 2000 Ta=25°C COLLECTOR CURRENT : IC (mA) 200 100 50 20 10 5 2 1 0 1000 1.5mA 500 25°C −55°C 1.0mA 200 0.5mA 100 IB=0A 1.6 2.0 200 VCE=3V 1V 100 0 50 1 2 5 10 20 50 100 200 500 1000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE(V) 0 0.4 0.8 1.2 COLLECTOR TO EMITTER VOLTAGE : VCE(V) COLLECTOR CURRENT : IC(mA) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current ( Ι ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 2000 VCE=3V 0.5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=25°C 0.5 lC/lB=10 1000 DC CURRENT GAIN : hFE 0.2 0.2 0.1 0.05 Ta =100°C 25°C −40°C 0.02 0.01 1 500 0.1 IC/IB=50 0.05 20 0.02 0.01 1 10 200 Ta=100°C 25°C −55°C 100 50 1 2 5 10 20 50 100 200 500 1000 2 5 10 20 50 100 200 5001000 2 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) COLLECTOR CURRENT : IC(mA) Fig.4 DC current gain vs. collector current (ΙΙ) Fig.5 Collector-emitter saturation voltage vs. collector current ( Ι ) Fig.6 Collector-emitter saturation voltage vs. collector current (ΙΙ) Rev.A 2/3 MP6X1 Transistors COLLECTOR OUTPUT CAPACITANCE : Cob (pF) TRANSITION FREQUENCY : fT (MHz) Ta=25°C VCE=5V 200 100 50 NORMALIZED TRANSIENT THERMAL RESISTANCE : r(t) Ta=25°C f=1MHz IE=0A 10 Ta=25℃ 1 100 20 50 0.1 10 20 -1 -2 -5 -10 -20 -50 -100 5 0.5 1 2 5 10 20 EMITTER CURRENT : IE(mA) COLLECTOR TO BASE VOLTAGE : VCB(V) 0.01 0.001 0.1 10 1000 Fig.7 Gain bandwidth product vs. emitter current Fig.8 Collector output capacitance vs. collector-base voltage PULSE WIDTH : Pw(s) Fig.9 Normalized thermal resistance (Element) 10 COLLECTOR CURRENT : IC (A) 10ms 1 100ms 1ms DC 0.1 Ta=25℃ Single Pulse 0.01 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area (Tr1&Tr2) Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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