MP6X11

Data Sheet Midium Power Transistors (30V / 1A) MP6X11  Structure NPN Silicon epitaxial planar transistor  Features Low saturation voltage VCE (sat) = 0.35V (Max.) (I C / I B= 500mA / 25mA) (1) Tr.1 (2) Tr.1 (3) Tr.2 (4) Tr.2 (5) Tr.2 (6) Tr.1 Emitter Base Collector Emitter Base Collector  Dimensions (Unit : mm) MPT6 (Dual) (6) (5) (4) (1) (2) (3)  Applications Low Frequency Amplifier Driver  Packaging specifications Type Package MPT6 Code TR Basic ordering unit (pieces) 1000  Inner circuit (Unit : mm) (6) (5) (4) Absolute maximum ratings (Ta=25°C) 　 (1) Tr.1 (2) Tr.1 (3) Tr.2 (4) Tr.2 (5) Tr.2 (6) Tr.1 Emitter Base Collector Emitter Base Collector Tr.2 Tr.1 (1) (2) (3) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature *1 Pw=10ms, Single Pulse *2 Mounted on a 40 x 40 x 0.7[mm] ceramic board. Symbol VCBO VCEO VEBO IC ICP PD *1 Limits 30 30 6 1 2 Unit V V V A A W/Total W/Element C C DC Pulsed *2 2.0 1.4 PD *2 Tj 150 Tstg -55 to 150 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.02 - Rev.A MP6X11 Electrical characteristics (Ta=25°C) 　 Data Sheet Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter staturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time *1 Pulsed *2 See switching time test circuit Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT *1 *1 Min. 30 30 6 270 - Typ. 120 320 7 90 300 60 Max. 100 100 350 680 - Unit V V V nV nV MHz pF ns ns ns Conditions IC= 1mA IC= 10μA IE= 10μA VCB= 30V VEB= 6V VCE= 2V, IC= 100mA VCE= 2V IE=-100mA, f=100MHz VCB= 10V, IE=0A f=1MHz IC= 500mA, I B1= 25mA, IB2=-25mA, V CC ~ 5V _ mV IC= 500mA, I B= 25mA Cob ton *2 tstg *2 t f *2 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.02 - Rev.A MP6X11 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics 5.0mA 4.0mA 3.0mA 0.8 0.7 1.5mA COLLECTOR CURRENT : I C[A] 0.6 0.5 1.0mA 0.4 0.3 0.2 0.1 Ta=25°C 0.0 0.0 1.0 2.0 3.0 4.0 5.0 IB=0.5mA 2.0mA 　 Data Sheet Fig.2 DC Current Gain vs. Collector Current( Ⅰ) 1000 Ta=25°C DC CURRENT GAIN :hFE VCE=5V 3V 100 10 1 10 100 1000 COLECTOR TO EMITTER VOLTAGE:VCE[V] Fig.3 DC Current Gain vs. Collector Current( Ⅱ) 1000 COLLECTOR SATURATION VOLTAGE :VCE(sat)[V] COLLECTOR CURRENT :IC[mA] Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current( Ⅰ) 10 Ta=25°C VCE=2V 1 DC CURRENT GAIN :hFE 100 Ta=125°C 75°C 25°C -40°C 0.1 0.01 IC/IB=50 20 10 VCE=2V Pulsed 10 1 10 100 1000 0.001 1 10 100 1000 COLLECTOR CURRENT :IC[mA] Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current( Ⅱ) 1 COLLECTOR SATURATION VOLTAGE :VCE(sat)[V] IC/IB=20 Pulsed COLLECTOR CURRENT : I C [mA] 1000 VCE=2V Pulsed Ta=125°C 75°C 25°C -40°C COLLECTOR CURRENT :IC[mA] Fig.6 Ground Emitter Propagation Characteristics 100 0.1 10 Ta=125°C 75°C 25°C -40°C 0.01 1 10 100 1000 1 0 0.5 1 1.5 BASE TO EMITTER VOLTAGE :VBE[V] COLLECTOR CURRENT :IC[mA] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.02 - Rev.A MP6X11 　 Data Sheet Fig.7 Emitter input capacitance vs. Emitter -Base Voltage Collector output capacitance vs.Collector -Base Voltage 100 COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) Cib Ta=25°C f=1MHz IC=0A 1000 Fig8. Gain Bandwidth Product vs. Emitter Current 10 TRANSITION FREQUENCY :fT[MHz] Ta=25°C VCE=2V f=100MHz 100 Cob 1 0.1 1 10 100 COLLECTOR - BASE VOLTAGE : VCB (V) EMITTER - BASE VOLTAGE : VEB (V) 10 10 100 EMITTER CURRENT :IE[mA] 1000 Fig9. SAFE OPERATING AREA 10 1ms (A) 10ms 100ms COLLECTOR CURRENT : I C 1 0.1 DC (Mounted on a ceramic board) 0.01 Ta=25°C W hen one element operated Single non repetitive pulse 0.001 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE :VCE(V) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.02 - Rev.A MP6X11  Switching time test circuit Data Sheet RL=10Ω VIN IB1 IC IB2 _ VCC~ 5V Pw _ Pw ~ 50μs DUTY CYCLE≦1% I B1 BASE CURENT WAVEFORM I B2 ton 90% tstg tf COLLECTOR CURRENT WAVEFORM 10% IC www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.02 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A