MP6X2

MP6X2 Transistors Medium Power Transistor (32V, 2A) MP6X2 Application Low frequency amplifier Dimensions (Unit : mm) MPT6 (6) (5) (4) Features 1) Low VCE(sat), VCE(sat) = 0.5V(Typ.) (IC / IB = 2A / 0.2A) 2) Contain two 2SD1766-dies in a package. (1) (2) (3) Structure NPN silicon epitaxial planar transistor Packaging specifications Package Type Code Basic ordering unit (pieces) MP6X2 Taping TR 1000 Inner circuit (6) (5) (4) (1) EMITTER (2) BASE (3) COLLECTOR (4) EMITTER (5) BASE (6) COLLECTOR (1) (2) (3) Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous Collector current Pulsed Power dissipation Junction temperature Range of storage temperature ICP PD Tj Tstg ∗1 Symbol VCBO VCEO VEBO IC Limits 40 32 5 2.0 2.5 2.0 1.4 150 −55 to +150 Unit V V V A A W / TOTAL W / ELEMENT °C °C ∗2 ∗1 Pw=10ms 1Pulse ∗2 Mounted on a ceramic board Rev.A 1/3 MP6X2 Transistors Electrical characteristics (Ta=25°C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance ∗ Pulsed Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob ∗ ∗ Min. 32 40 5 − − − 120 − − Typ. − − − − − 500 − 100 30 Max. − − − 1.0 1.0 800 390 − − Unit V V V µA µA mV − MHz pF IC=1mA IC=50µA IE=50µA VCB=20V VEB=4V Conditions IC/IB=2.0A/200mA VCE=3V, IC=500mA VCE=5V, IE=−500mA, f=100MHz VCB=10V, IE=0A, f=1MHz Electrical characteristics curves 10 COLLECTOR CURRENT：Ic(A) Ta=100℃ 　　　 25℃ 　　　-40℃ VCE=3V 0.35 Ta=25℃ 0.3 0.25 0.2 2.0mA 1.8mA 1.6mA 1.4mA 1.2mA 1.0mA DC CURRENT GAIN : hFE Ta=25°C 500 1 200 VCE=3V 1V 0.1 0.15 0.01 100 0.8mA 0.6mA 0.4mA 0.2mA 0.1 0.05 50 0.001 0 0.5 1 1.5 0 0 0.5 1 1.5 2 IB=0mA 20 5 10 20 50 100 200 500 1A 2A BASE TO EMITTER VOLTAGE：VBE(V) Fig.1 Grounded Emitter Propagation Characteristics COLLECTOR TO EMITTER VOLTAGE：VCE(V） Fig.2 Ground Emitter Output Caracteristics COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current ( Ι ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 1000 VCE=3V DC CURRENT GAIN：hFE Ta=25°C 500 COLLECTOR SATURATION VOLTAGE ：VCE(sat)(V) 1 IC/IB=10 200 100 Ta=100℃ 　　　 25℃ 　　　-40℃ 0.1 Ta=100℃ 　　　 25℃ 　　　-40℃ 100 IC/IB=50 50 20 20 10 10 20 10 0.001 0.01 0.1 1 10 5 50 100 200 500 1A 2A 0.01 0.001 0.01 0.1 1 10 COLLECTOR CURRENT：Ic(A) Fig.4 DC Current Gain vs. Collector Current (Ⅱ) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT：Ic(A) Fig.6 Collector-Enitter Saturation Voltage vs. Collector Current (Ⅱ) Fig.5 Collector-emitter saturation voltage vs. collector current (Ι) Rev.A 2/3 MP6X2 Transistors BASE SATURATION VOLTAGE : VBE(sat) (V) 2 TRANSITION FREQUENCY : fT (MHz) Ta=25°C 1000 500 Ta=25°C VCE=5V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 1000 500 Cib 200 100 50 Cob 1 IC/IB=10 0.5 Ta=25°C f=1MHz IE=0A IC=0A 200 100 0.2 50 0.1 20 10 5 10 20 50 100 200 500 1A 2A 20 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1A 0.5 1 2 5 10 20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation voltage vs. collector current Fig.8 Transition frequency vs. emitter current Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Normalized Transient Thermal Resistance : r(t) 10 COLLECTOR CURRENT : IC (A) 10 Ta=25℃ 100ms 10ms 1ms 1 DC 0.1 Ta=25℃ Single Pulse 0.01 1 0.1 0.01 0.001 0.1 10 1000 0.1 1 10 100 Pulse width : Pw(s) Fig.10 Normalized thermal resistance (Element) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.11 Safe operating area Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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