MP6X3

MP6X3 Transistors Medium Power Transistor (60V, 3A) MP6X3 Application Low frequency amplifier High speed switching Dimensions (Unit : mm) MPT6 (6) (5) (4) Features 1) High speed switching. (tf : Typ. : 30ns at IC=3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC=2A, IB=200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Contain two 2SC5824-dies in a package. (1) (2) (3) Structure NPN silicon epitaxial planar transistor Packaging specifications Package Type Code Basic ordering unit (pieces) MP6X3 Taping TR 1000 Inner circuit (6) (5) (4) (1) EMITTER (2) BASE (3) COLLECTOR (4) EMITTER (5) BASE (6) COLLECTOR (1) (2) (3) Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Continuous Collector current Pulsed Power dissipation Junction temperature Range of storage temperature ICP PD Tj Tstg ∗1 Symbol VCBO VCEO VEBO IC Limits 60 60 6 3 6 2.0 1.4 150 −55 to +150 Unit V V V A A W / TOTAL W / ELEMENT °C °C ∗2 ∗1 Pw=10ms 1Pulse ∗2 Mounted on a ceramic board Rev.A 1/3 MP6X3 Transistors Electrical characteristics (Ta=25°C) Parameter Collector-Emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut off current Emitter cut off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time ∗1 ∗2 Symbol BVCEO BVCBO BVEBO ICBO IEBO ∗1 VCE(sat) Min. 60 60 6 − − − 120 − − − − − Typ. − − − − − 200 − 200 20 50 150 30 Max. − − − 1.0 1.0 500 390 − − − − − Unit V V V µA µA mV − MHz pF ns ns ns IC= 1mA IC= 100µA IE= 100µA VCB= 40V VEB= 4V Conditions IC/IB= 2.0A/200mA VCE= 2V, IC= 100mA VCE= 10V, IE= −100mA, f=10MHz VCB= 10V, IE=0A, f=1MHz IC= 3V IB1= 300mA IB2= −300mA VCC ∼ −25V − hFE fT ∗1 Cob ton ∗2 tstg ∗2 tf ∗2 Pulsed See switching time test circuit Electrical characteristics curves 10 IB=9mA 1.0 IB=7mA IB=6mA 1000 COLLECTOR CURRENT ： IC(A) VCE=2V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Ta=25°C COLLECTOR CURRENT : IC (A) IB=8mA IB=10mA Ta=125°C 1 Ta=100°C Ta= −40°C IB=5mA IB=4mA IB=3mA IB=2mA IB=1mA DC CURRENT GAIN : hFE VCE=5V 100 VCE=3V VCE=2V 0.1 Ta=25°C 10 Ta=25℃ 0.0 0.5 1.0 1.5 2.0 COLLECTOR TO EMITTER VOLTAGE：VCE(V) 1 0.001 0.01 0.1 1 10 0.01 0 0.5 1 1.5 2 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR CURRENT : IC (A) Fig.1 Ground emitter propagation characteristics Fig.3 DC current gain vs. collector Fig.2 Grounded emitter output characteristics current 1000 VCE=2V 10 Ta=25°C 10 IC/IB=10/1 100 Ta= −40°C Ta=25°C Ta=100°C Ta=125°C COLLECTOR SATURATION VOLTAGE : VCE (sat)(V) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) DC CURRENT GAIN : hFE 1 1 Ta=125°C Ta=100°C 10 0.1 IC/IB=20/1 IC/IB=10/1 0.1 Ta=25°C Ta= −40°C 1 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current Fig.5 Collector-emitter saturation voltage vs. collector current Fig.6 Collector-emitter saturation voltage vs. Collector Current Rev.A 2/3 MP6X3 Transistors 10 1000 TRANSITION FREQUENCY : FT (MHz) IC/IB=10/1 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 100 BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) Ta=25°C VCE=10V Ta=25°C f=1MHz Ta= −40°C Ta=25°C 100 1 10 10 Ta=100°C Ta=125°C 0.1 0.001 0.01 0.1 1 10 1 −0.001 −0.01 −0.1 −1 −10 1 0.1 1 10 100 COLLECTOR CURRENT : IC (A) EMITTER CURRENT : IE (A) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Base-emitter saturation voltage vs. collector current Normalized Transient Thermal Resistance : r(t) Fig.8 Transition frequency Fig.9 Collector output capacitance 100ms COLLECTOR CURRENT : IC (A) 10ms 1ms 1000 Ta=25°C VCC=25V IC/IB=10/1 10 Ta=25℃ 10 tstg SWITCHING TIME (ns) 1 DC 0.1 Ta=25℃ Single Pulse 0.01 1 100 ton 0.1 tf 10 0.01 0.1 1 10 0.01 0.001 0.1 10 1000 COLLECTOR CURRENT : IC (A) Pulse width : Pw(s) 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Switching Time Fig.11 Normalized thermal resistance (Element) Fig.12 Safe operating area (Tr1&Tr2) Switching characteristics measurement circuits RL=8.3Ω VIN IB1 IC VCC 25V IB2 1% PW PW 50 S Duty cycle IB1 Base current waveform 90% Collector current waveform ton IC 10% tstg tf IB2 Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of which would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0