MP6Z1

Medium Power Transistor (-32V, -1A) MP6Z1 Applications Low frequency amplifier Features 1) Low VCE(sat) VCE(sat) = -0.2V(Typ.) (IC / IB = -500mA / -50mA) 2) Contains 2SD1664-die and 2SB1132-die in a package. Structure Silicon epitaxial planar transistor Dimensions (Unit : mm) MPT6 (6) (5) (4) (1) (2) (3) Packaging specifications Inner circuit Package Type Code Basic ordering unit(pieces) Taping TR 1000 (6) (5) (4) (1) Emitter (2) Base (3) Collector (4) Emitter MP6Z1 (1) (2) (3) (5) Base (6) Collector Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature ∗1 Pw=10ms 1Pulse ∗2 Mounted on a ceramic board Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg ∗1 ∗2 Limits Tr1 40 32 5 1.0 2.0 Tr2 −40 −32 −5 −1.0 −2.0 2.0 1.4 150 −55 to 150 Unit V V V A A W / TOTAL W / ELEMENT °C °C Continuous Pulsed www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 1/6 2010.01 - Rev.B MP6Z1 Electrical characteristics (Ta=25C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance ∗ Pulsed Data Sheet Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat)∗ hFE fT Cob ∗ Min. 32 40 5 − − − 120 − − Typ. − − − − − − − 150 15 Max. − − − 500 500 400 390 − − Unit V V V nA nA mV − MHz pF IC=1mA IC=50μA IE=50μA VCB=20V VEB=4V Conditions IC=500mA, IB=50mA VCE=3V, IC=100mA VCE=5V, IE=−50mA, f=100MHz VCB=10V, IE=0A, f=1MHz Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance ∗ Pulsed Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat)∗ hFE fT Cob ∗ Min. −32 −40 −5 − − − 120 − − Typ. − − − − − − − 150 20 Max. − − − −500 −500 −500 390 − − Unit V V V nA nA mV − MHz pF IC= −1mA IC= −50μA IE= −50μA VCB= −20V VEB= −4V Conditions IC= −500A, IB= −50mA VCE= −3V, IC= −100mA VCE= −5V, IE=50mA, f=100MHz VCB= −10V, IE=0A, f=1MHz www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 2/6 2010.01 - Rev.B MP6Z1 Electrical characteristics curves 500 500 Data Sheet COLLECTOR CURRENT : IC (mA) VCE=6V Ta=100°C 2.5mA 400 4.5mA 300 3.0mA 3.5mA 4.0mA Ta=25°C 2.0mA DC CURRENT GAIN : hFE 2000 Ta=25°C COLLECTOR CURRENT : IC (mA) 200 100 50 20 10 5 2 1 0 1000 1.5mA 500 25°C −55°C 1.0mA 200 0.5mA 100 IB=0A 1.6 2.0 200 VCE=3V 1V 100 0 50 1 2 5 10 20 50 100 200 500 1000 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 BASE TO EMITTER VOLTAGE : VBE(V) 0 0.4 0.8 1.2 COLLECTOR TO EMITTER VOLTAGE : VCE(V) COLLECTOR CURRENT : IC(mA) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current ( Ι ) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) 2000 VCE=3V 0.5 COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) Ta=25°C 0.5 lC/lB=10 1000 DC CURRENT GAIN : hFE 0.2 0.2 0.1 0.05 Ta=100°C 25°C −40°C 0.02 0.01 1 500 0.1 IC/IB=50 0.05 20 0.02 0.01 1 10 200 Ta=100°C 25°C −55°C 100 50 1 2 5 10 20 50 100 200 500 1000 2 5 10 20 50 100 200 5001000 2 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC(mA) Fig.4 DC current gain vs. collector current (ΙΙ) Fig.5 Collector-emitter saturation voltage vs. collector current ( Ι ) Fig.6 Collector-emitter saturation voltage vs. collector current (ΙΙ) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) TRANSITION FREQUENCY : fT (MHz) Ta=25°C VCE=5V 200 100 NORMALIZED TRANSIENT THERMAL RESISTANCE : r(t) Ta=25°C f=1MHz IE=0A 10 Ta=25℃ 50 1 100 20 50 0.1 10 20 -1 -2 -5 -10 -20 -50 -100 5 0.5 1 2 5 10 20 EMITTER CURRENT : IE(mA) COLLECTOR TO BASE VOLTAGE : VCB (V) 0.01 0.001 0.1 10 1000 Fig.7 Gain bandwidth product vs. emitter current Fig.8 Collector output capacitance vs. collector-base voltage PULSE W IDTH : Pw(s) Fig.9 Normalized thermal resistance (Element) www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 3/6 2010.01 - Rev.B MP6Z1 10 COLLECTOR CURRENT : IC ( A) Data Sheet 10ms 1ms 1 100ms 0.1 DC 0.01 0.1 Ta=25 TR1 SIngle Pulse 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 4/6 2010.01 - Rev.B MP6Z1 Electrical characteristics curves -500 COLLECTOR CURRENT : IC (mA) Data Sheet -200 -100 -50 -20 -10 -5 -2 -1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 BASE TO EMITTER VOLTAGE : VBE (V) Ta=100 C 25 C −55 C COLLECTOR CURRENT : IC (mA) VCE= −6V −500 DC CURRENT GAIN : hFE −3.0 −3.5 −4.0 −400 −4.5 −5.0 −300 −2.5 Ta=25 C −2.0 −1.5 Ta=25 C 1000 500 VCE= −3V −1V 200 −200 −1.0 −100 −0.5 100 0 0 −0.4 −0.8 −1.2 IB=0mA −1.6 −2.0 50 −1 −2 −5 −10 −20 −50 −100 −200 −500 −1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter propagation characteristics Fig.2 Grounded emitter output characteristics Fig.3 DC current gain vs. collector current(Ι) COLLECTOR SATURATION VOLTAGE : VCE(sat )(V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) VCE= −3V 1000 −1 −0.5 Ta=25 C IC/IB=10 −1.0 Ta=25 C DC CURRENT GAIN : hFE −0.8 500 Ta=100 C 200 25 C −55 C −0.2 −0.1 −0.05 −0.6 lC= −500mA −0.4 100 50 −1 −2 −0.02 −0.01 −1 −2 −0.2 lC= −300mA −2 −5 −10 −20 −50 −100 −5 −10 −20 −50 −100 −200 −500 −1000 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 0 −1 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) BASE CURRENT : IB (mA) Fig.4 DC current gain vs. collector current(ΙΙ) Fig.5 Collector-emitter saturation voltage vs. collector current Fig.6 Collector-emitter saturation voltage vs. base current TRANSITION FREQUENCY : fT (MHz) Ta=25 C VCE= −5V 200 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=25 C f=1MHz IE=0A NORMALIZED TRANSIENT THERMAL RESISTANCE : r(t) 100 10 Ta=25℃ 50 100 1 50 20 0.1 20 −1 −2 −5 −10 −20 −50 −100 10 −0.5 −1 −2 −5 −10 −20 EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) 0.01 0.001 0.1 10 1000 Fig.7 Gain bandwidth product vs. emitter current Fig.8 Collector output capacitance vs.collector-base voltage Fig.9 PULSE W IDTH : Pw(s) Normalized thermal resistance (Element) www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 5/6 2010.01 - Rev.B MP6Z1 10 COLLECTOR CURRENT : IC ( -A) Data Sheet 10ms 1ms 1 100ms DC 0.1 0.01 0.1 Ta=25 SIngle Pulse 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE(V) Fig.10 Safe operating area www.rohm.com c ○ 2010 ROHM Co., Ltd. All rights reserved. 6/6 2010.01 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 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