MP6Z11

Data Sheet Midium Power Transistors (±30V / ±1A) MP6Z11  Structure NPN/PNP Silicon epitaxial planar transistor  Features Low saturation voltage, typically VCE (sat) = 0.35V (Max.) (I C / I B= 500mA / 25mA) VCE (sat) = -0.35V (Max.) (I C / I B= -500mA / -25mA)  Dimensions (Unit : mm) MPT6 (Dual) (6) (5) (4)  Applications Low Frequency Amplifier Driver  Packaging specifications Type Package MPT6 Code TR Basic ordering unit (pieces) 1000 (1) Tr.1 (2) Tr.1 (3) Tr.2 (4) Tr.2 (5) Tr.2 (6) Tr.1 Emitter Base Collector Emitter Base Collector (1) (2) (3)  Inner circuit (Unit : mm) (6) (5) (4) Tr.2  Absolute maximum ratings (Ta = 25C) 　 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Symbol VCBO VCEO VEBO IC ICP *1 Limits 30 30 6 1 2 Unit V V V A A (1) Tr.1 (2) Tr.1 (3) Tr.2 (4) Tr.2 (5) Tr.2 (6) Tr.1 Emitter Base Collector Emitter Base Collector Tr.1 (1) (2) (3) 　 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Symbol VCBO VCEO VEBO IC ICP *1 Limits -30 -30 -6 -1 -2 Unit V V V A A 　 Parameter Power dissipation Junction temperature Range of storage temperature *1 Pw=10ms, Single Pulse *2 Mounted on a 40 x 40 x 0.7[mm] ceramic board. Symbol PD *2 Limits 2.0 1.4 Unit W/Total W/Element C C PD *2 Tj 150 Tstg -55 to 150 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/7 2011.02 - Rev.A MP6Z11 Data Sheet Electrical characteristics (Ta=25°C) 　 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter staturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time *1 Pulsed *2 See switching time test circuit Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT *1 *1 Min. 30 30 6 270 - Typ. 120 320 7 90 300 60 Max. 100 100 350 680 - Unit V V V nA nA MHz pF ns ns ns Conditions IC= 1mA IC= 10μA IE= 10μA VCB= 30V VEB= 6V VCE= 2V, IC= 100mA VCE= 2V IE=-100mA, f=100MHz VCB= 10V, IE=0A f=1MHz IC= 0.5A, I B1= 25mA, IB2=-25mA, V CC~ 5V _ mV IC= 500mA, I B= 25mA Cob ton *2 tstg *2 t f *2 　 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter staturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time *1 Pulsed *2 See switching time test circuit Symbol BVCEO BVCBO BVEBO ICBO IEBO * VCE(sat)1 hFE fT *1 Min. -30 -30 -6 270 - Typ. -150 320 7 60 160 50 Max. -100 -100 -350 680 - Unit V V V nA nA MHz pF ns ns ns Conditions IC= -1mA IC= -10μA IE= -10μA VCB= -30V VEB= -6V VCE= -2V, I C= -100mA VCE= -2V IE=100mA, f=100MHz VCB= -10V, I E=0A f=1MHz IC= -0.5A, I B1= -25mA, _ IB2=25mA, VCC ~ -5V mV IC= -500mA, I B= -25mA Cob ton *2 tstg *2 t f *2 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/7 2011.02 - Rev.A MP6Z11 Electrical characteristic curves (Ta=25C) 〈Tr.1〉 Fig.1 Typical Output Characteristics 5.0mA 0.8 1.5mA 0.7 COLLECTOR CURRENT : IC[A] 0.6 1.0mA 0.5 0.4 0.3 0.2 0.1 Ta=25°C 0.0 0.0 1.0 2.0 3.0 4.0 5.0 IB=0.5mA 4.0mA 3.0mA 2.0mA 　 Data Sheet Fig.2 DC Current Gain vs. Collector Current( Ⅰ) 1000 Ta=25°C DC CURRENT GAIN :hFE VCE=5V 3V 100 10 1 10 100 1000 COLECTOR TO EMITTER VOLTAGE:VCE[V] Fig.3 DC Current Gain vs. Collector Current( Ⅱ) 1000 COLLECTOR SATURATION VOLTAGE :VCE(sat)[V] COLLECTOR CURRENT :IC[mA] Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current( Ⅰ) 10 Ta=25°C VCE=2V 1 DC CURRENT GAIN :hFE 100 Ta=125°C 75°C 25°C -40°C 0.1 0.01 IC/IB=50 20 10 VCE=2V Pulsed 10 1 10 100 1000 0.001 1 10 100 1000 COLLECTOR CURRENT :IC[mA] Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current( Ⅱ) 1 COLLECTOR SATURATION VOLTAGE :VCE(sat)[V] IC/IB=20 Pulsed COLLECTOR CURRENT : I C [mA] 1000 VCE=2V Pulsed Ta=125°C 75°C 25°C -40°C COLLECTOR CURRENT :IC[mA] Fig.6 Ground Emitter Propagation Characteristics 100 0.1 Ta=125°C 75°C 25°C -40°C 10 0.01 1 10 100 1000 1 0 0.5 1 1.5 COLLECTOR CURRENT :IC[mA] BASE TO EMITTER VOLTAGE :VBE[V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/7 2011.02 - Rev.A MP6Z11 　 Data Sheet Fig.7 Emitter input capacitance vs. Emitter -Base Voltage Collector output capacitance vs.Collector -Base Voltage 100 COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) Ta=25°C f=1MHz IC=0A 1000 Fig8. Gain Bandwidth Product vs. Emitter Current 10 TRANSITION FREQUENCY :fT[MHz] Cib Ta=25°C VCE=2V f=100MHz 100 Cob 1 0.1 1 10 100 COLLECTOR - BASE VOLTAGE : VCB (V) EMITTER - BASE VOLTAGE : VEB (V) Fig9. SAFE OPERATING AREA 10 1ms 10 10 100 EMITTER CURRENT :IE[mA] 1000 COLLECTOR CURRENT : I C (A) 1 10ms 100ms 0.1 DC (Mounted on a ceramic board) 0.01 Ta=25°C W hen one element operated Single non repetitive pulse 0.001 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE :VCE(V) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/7 2011.02 - Rev.A MP6Z11 〈Tr.2〉 -0.50 -0.45 COLLECTOR CURRENT :IC[A] -0.40 -0.35 -0.30 -1.0mA -0.25 -0.20 -0.15 -0.10 -0.05 0.00 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 IB=-0.5mA -2.0mA 　 Data Sheet Fig.1 Typical Output Characteristics -5.0mA -4.0mA -3.0mA 1000 Fig.2 DC Current Gain vs. Collector Current( Ⅰ) Ta=25°C -1.5mA DC CURRENT GAIN :hFE 100 VCE=-5V -2V Ta=25°C 10 -1 -10 -100 -1000 COLECTOR TO EMITTER VOLTAGE:VCE[V] Fig.3 DC Current Gain vs. Collector Current( Ⅱ) 1000 COLLECTOR SATURATION VOLTAGE :VCE(sat)[V] COLLECTOR CURRENT :IC[mA] Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current( Ⅰ) -10 Ta=25°C Pulsed DC CURRENT GAIN :hFE -1 100 Ta=125°C 75°C 25°C -40°C IC/IB=50 20 10 -0.1 VCE=-2V Pulsed 10 -1 -10 -100 -1000 -0.01 -1 -10 -100 -1000 COLLECTOR CURRENT :IC[mA] Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current( Ⅱ) -1000 VCE=-2V Pulsed COLLECTOR CURRENT :IC[mA] COLLECTOR CURRENT :IC[mA] Fig.6 Ground Emitter Propagation Characteristics -1 COLLECTOR SATURATION VOLTAGE :VCE(sat)[V] -100 Ta=125°C 75°C 25°C -40°C -0.1 -10 IC/IB=20 Pulsed -0.01 -1 -10 Ta=125°C 75°C 25°C -40°C -100 -1000 -1 0 -0.5 -1 -1.5 COLLECTOR CURRENT :IC[mA] BASE TO EMITTER VOLTAGE :VBE[V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/7 2011.02 - Rev.A MP6Z11 　 Data Sheet Fig.7 Emitter input capacitance vs. Emitter -Base Voltage Collector output capacitance vs.Collector -Base Voltage 100 COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) Ta=25°C f=1MHz IC=0A TRANSITION FREQUENCY : f T [MHz] 1000 Fig8. Gain Bandwidth Product vs. Emitter Current Cib Ta=25°C VCE=-2V f=100MHz 10 100 Cob 1 -0.1 -1 -10 -100 COLLECTOR - BASE VOLTAGE : VCB (V) EMITTER - BASE VOLTAGE : VEB (V) Fig9. SAFE OPERATING AREA -10 1ms 10ms 10 10 100 EMITTER CURRENT :IE[mA] 1000 COLLECTOR CURRENT : IC (A) -1 100ms -0.1 DC (Mounted on a ceramic board) -0.01 Ta=25°C W hen one element operated Single non repetitive pulse -0.001 -0.1 -1 -10 -100 COLLECTOR TO EMITTER VOLTAGE :VCE(V) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/7 2011.02 - Rev.A MP6Z11 Data Sheet  Switching time test circuit 　 V IN I B1 IC IB2 Pw ~ 50μs _ DUTY CYCLE≦1% RL=10Ω VCC ~ 5V _ Pw BASE CURRENT WAVEFORM IB1 IB2 COLLECTOR CURRENT WAVEFORM 90% t on tstg tf IC 10% 　 RL=10Ω IB1 Pw IB2 IC VIN _ VCC~ -5V _ Pw ~ 50μs DUTY CYCLE≦1% IB2 BASE CURRENT WAVEFORM IB1 ton COLLECTOR CURRENT WAVEFORM 90% tstg tf IC 10% www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/7 2011.02 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A