MP6Z13

Data Sheet Midium Power Transistors (±50V / ±3A) MP6Z13  Structure NPN/PNP Silicon epitaxial planar transistor  Features 1) Low saturation voltage, typically V CE (sat) = 0.35V (Max.) (I C / I B= 1A / 50mA) V CE (sat) = -0.40V (Max.) (I C / I B= -1A / -50mA) 2) High speed switching  Applications Low Frequency Amplifier Driver  Packaging specifications Type Package MPT6 Code TR Basic ordering unit (pieces) 1000 (1) Tr.1 (2) Tr.1 (3) Tr.2 (4) Tr.2 (5) Tr.2 (6) Tr.1 Emitter Base Collector Emitter Base Collector  Dimensions (Unit : mm) MPT6 (Dual) (6) (5) (4) (1) Tr.1 (2) Tr.1 (3) Tr.2 (4) Tr.2 (5) Tr.2 (6) Tr.1 Emitter Base Collector Emitter Base Collector (1) (2) (3)  Inner circuit (Unit : mm) (6) (5) (4) Tr.2 Tr.1  Absolute maximum ratings (Ta = 25C) 　 (1) (2) (3) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Symbol VCBO VCEO VEBO IC ICP *1 Limits 50 50 6 3 6 Unit V V V A A 　 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Symbol VCBO VCEO VEBO IC ICP *1 Limits -50 -50 -6 -3 -6 Unit V V V A A 　 Parameter Power dissipation Junction temperature Range of storage temperature *1 Pw=10ms, Single Pulse *2 Mounted on a 40 x 40 x 0.7[mm] ceramic board. Symbol PD *2 Limits 2.0 1.4 Unit W/Total W/Element C C PD *2 Tj 150 Tstg -55 to 150 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/7 2011.02 - Rev.A MP6Z13 Electrical characteristics (Ta = 25°C) 　 Data Sheet Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter staturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time *1 Pulsed *2 See switching time test circuit Symbol BVCEO BVCBO BVEBO ICBO IEBO *1 VCE(sat) Min. 50 50 6 180 - Typ. 130 320 13 50 450 80 Max. 1 1 350 450 - Unit V V V A A MHz pF ns ns ns Conditions IC= 1mA IC= 100μA IE= 100μA VCB= 50V VEB= 4V VCE= 3V, IC= 50mA VCE= 10V IE=-500mA, f=100MHz VCB= 10V, IE=0A f=1MHz IC= 1.5A, I B1= 150mA, IB2=-150mA, V CC~ 10V _ mV IC= 1A, IB= 50mA hFE fT *1 Cob ton *2 tstg *2 tf *2 　 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter staturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time *1 Pulsed *2 See switching time test circuit Symbol BVCEO BVCBO BVEBO ICBO IEBO *1 VCE(sat) Min. -50 -50 -6 180 - Typ. -200 300 24 45 250 35 Max. -1 -1 -400 450 - Unit V V V A A MHz pF ns ns ns Conditions IC= -1mA IC= -100μA IE= -100μA VCB= -50V VEB= -4V VCE= -3V, I C= -50mA VCE= -10V IE=500mA, f=100MHz VCB= -10V, I E=0A f=1MHz IC= -1.5A, I B1= -150mA, IB2=150mA, VCC ~ -10V _ mV IC= -1A, I B= -50mA hFE fT *1 Cob ton *2 tstg *2 tf *2 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/7 2011.02 - Rev.A MP6Z13 Electrical characteristic curves (Ta=25C) 〈Tr.1〉 Fig.1 Typical Output Characteristics 5mA 3.0mA 0.5 2.0mA 2.5mA 　 Data Sheet Fig.2 DC Current Gain vs. Collector Current ( I ) 1000 Ta=25°C 0.4 COLLECTOR CURRENT : IC[A] 1.5mA DC CURRENT GAIN : hFE 0.3 1.0mA 0.2 100 VCE=5V 3V 0.1 IB=0.5mA Ta=25°C 0.0 0 0.5 1 1.5 2 10 1 10 100 1000 10000 COLECTOR TO EMITTER VOLTAGE :VCE[V] Fig3. DC Current Gain vs. Collector Current ( II ) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] VCE=3V COLLECTOR CURRENT : IC[mA] Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I ) 1 Ta=25°C DC CURRENT GAIN : hFE 0.1 100 Ta=125°C 75°C 25°C -40°C 0.01 IC/IB=50 20 10 10 1 10 100 1000 10000 0.001 1 10 100 1000 10000 COLLECTOR CURRENT : IC[mA] COLLECTOR CURRENT : IC[mA] Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II ) 1 COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] 10000 Fig.6 Ground Emitter Propagation Characteristics VCE=3V COLLECTOR CURRENT : IC[mA] 1000 Ta=125°C 7 5 °C 2 5 °C -40°C 0.1 100 0.01 Ta=125°C 75°C 25°C -40°C 10 IC/IB=20 0.001 1 10 100 1000 10000 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 COLLECTOR CURRENT : IC[mA] BASE TO EMITTER VOLTAGE : VBE[V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/7 2011.02 - Rev.A MP6Z13 　 Data Sheet Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs. Collector -Base Voltage 1000 COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) Ta=25°C f=1MHz IE=0A IC=0A 1000 Fig.8 Gain BandwidthProduct vs. Emitter Current Ta=25°C VCE=10V TRANSITION FREQUENCY : fT[MHz] Cib 100 100 10 Cob 1 0.1 1 10 100 COLLECTOR - BASE VOLTAGE : VCB (V) EMITTER - BASE VOLTAGE : VEB (V) Fig.9 Safe Operating Area 10 1ms COLLECTOR CURRENT : IC [A] 10ms 1 100ms 10 10 100 EMITTER CURRENT : IE[mA] 1000 0.1 DC (Mounted on a ceramic board) 0.01 Ta=25°C W hen one element operated Single non repetitive pulse 0.001 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE[V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/7 2011.02 - Rev.A MP6Z13 〈Tr.2〉 Fig.1 Typical Output Characteristics -5.0mA -4.0mA -0.5 -2.5mA -3.0mA 　 Data Sheet Fig.2 DC Current Gain vs. Collector Current ( I ) 1000 Ta=25°C COLLECTOR CURRENT : IC[A] -0.3 -1.5mA DC CURRENT GAIN : hFE -0.4 -2.0mA 100 VCE= -5V -3V -0.2 -1.0mA -0.1 IB=-0.5mA 0.0 0 -0.5 -1 -1.5 -2 10 -1 -10 -100 -1000 -10000 COLECTOR TO EMITTER VOLTAGE : VCE[V] Fig.3 DC Current Gain vs. Collector Current ( II ) 1000 COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] VCE= -3V COLLECTOR CURRENT : IC[mA] Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I ) -1 Ta=25°C DC CURRENT GAIN : hFE -0.1 100 Ta=125°C 75°C 25°C -40°C IC/IB=50 20 10 -0.01 10 -1 -10 -100 -1000 -10000 -0.001 -1 -10 -100 -1000 -10000 COLLECTOR CURRENT : IC[mA] Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II ) -1 COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] -10000 VCE= -3V COLLECTOR CURRENT : IC[mA] COLLECTOR CURRENT : IC[mA] Fig.6 Ground Emitter Propagation Characteristics -1000 -0.1 Ta=125°C 75°C 25°C -40°C -100 -0.01 Ta=125°C 75°C 25°C -40°C -10 IC/IB=20 -0.001 -1 -10 -100 -1000 -10000 -1 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 COLLECTOR CURRENT : IC[mA] BASE TO EMITTER VOLTAGE : VBE[V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/7 2011.02 - Rev.A MP6Z13 　 Data Sheet Fig.7 Emitter Input Capacitance vs. Emitter -Base Voltage Collector Output Capacitance vs. Collector -Base Voltage 1000 COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) 1000 Fig.8 Gain Bandwidth Product vs. Emitter Current Cib 100 TRANSITION FREQUENCY : fT[MHz] Ta=25°C f=1MHz IE=0A IC=0A Ta=25°C VCE= -10V 100 10 Cob 1 -0.1 10 -1 -10 -100 10 100 EMITTER CURRENT : IE[mA] 1000 COLLECTOR - BASE VOLTAGE : VCB [V] EMITTER - BASE VOLTAGE : VEB [V] Fig.9 Safe Operating Area -10 1ms 10ms COLLECTOR CURRENT : IC[A] -1 100ms -0.1 -0.01 DC (Mounted on a ceramic board) Ta=25°C W hen one element operated Single non repetitive pulse -0.001 -0.1 -1 -10 -100 COLLECTOR TO EMITTER VOLTAGE : VCE[V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/7 2011.02 - Rev.A MP6Z13 Switching time test circuit 　 V IN I B1 IC IB2 Pw ~ 50μs _ DUTY CYCLE≦1% Data Sheet RL=6.8Ω VCC ~ 10V _ Pw BASE CURRENT WAVEFORM IB1 IB2 COLLECTOR CURRENT WAVEFORM 90% t on tstg tf IC 10% 　 RL=6.8Ω IB1 Pw IB2 IC VIN _ VCC~ -10V _ Pw ~ 50μs DUTY CYCLE≦1% IB2 BASE CURRENT WAVEFORM IB1 ton COLLECTOR CURRENT WAVEFORM 90% tstg tf IC 10% www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/7 2011.02 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A