MP6Z2

MP6Z2 Transistors Medium Power Transistor (32V, 2A) MP6Z2 Applications Low frequency amplifier Dimensions (Unit : mm) MPT6 Features 1) Low VCE(sat) VCE(sat) = 0.5V(Typ.) (IC /IB = 2A / 0.2A) 2) Contains 2SD1766-die and 2SB1188-die in a package. (6) (5) (4) (1) (2) (3) Structure Silicon epitaxial planar transistor Packaging specifications Package Type Code Basic ordering unit(pieces) MP6Z2 Taping TR 1000 Inner circuit (6) (5) (4) (1) Emitter (2) Base (3) Collector (4) Emitter (5) Base (6) Collector (1) (2) (3) Absolute maximum ratings (Ta=25 C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature ∗1 Pw=10ms 1Pulse ∗2 Mounted on a ceramic board Symbol VCBO VCEO VEBO IC ICP PD Tj Tstg ∗1 ∗2 Limits Tr1 40 32 5 2.0 2.5 Tr2 −40 −32 −5 −2.0 −2.5 2.0 1.4 150 −55 to 150 Unit V V V A A W / TOTAL W / ELEMENT °C °C Continuous Pulsed Rev.A 1/5 MP6Z2 Transistors Electrical characteristics (Ta=25 C) Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance ∗ Pulsed Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat)∗ hFE fT Cob ∗ Min. 32 40 5 − − − 120 − − Typ. − − − − − 500 − 100 30 Max. − − − 1.0 1.0 800 390 − − Unit V V V μA μA mV − MHz pF IC=1mA IC=50μA IE=50μA VCB=20V VEB=4V Conditions IC=2A, IB=200mA VCE=3V, IC=500mA VCE=5V, IE=−50mA, f=100MHz VCB=10V, IE=0A, f=1MHz Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance ∗ Pulsed Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob ∗ ∗ Min. −32 −40 −5 − − − 120 − − Typ. − − − − − −500 − 100 50 Max. − − − −1.0 −1.0 −800 390 − − Unit V V V μA μA mV − MHz pF IC= −1mA IC= −50μA IE= −50μA VCB= −20V VEB= −4V Conditions IC= −2A, IB= −200mA VCE= −3V, IC= −500mA VCE= −5V, IE=50mA, f=100MHz VCB= −10V, IE=0A, f=1MHz Rev.A 2/5 MP6Z2 Transistors Electrical characteristics curves 10 COLLECTOR CURRENT Ic(A) COLLECTOR CURRENT Ic(A) 0.25 0.2 0.15 0.1 0.05 0 1.4mA 1.2mA 1.0mA 0.8mA 0.6mA 0.4mA 0.2mA IB=0mA 0 0.5 1 1.5 2 DC CURRENT GAIN : hFE 1 Ta=100 25 -40 VCE=3V 0.35 Ta=25 0.3 2.0mA 1.8mA 1.6mA 500 Ta=25°C 200 VCE=3V 1V 0.1 100 0.01 50 0.001 0 0.5 1 1.5 20 5 10 20 50 100 200 500 1A 2A BASE TO EMITTER VOLTAGE VBE(V) COLLECTOR TO EMITTER VOLTAGE VCE(V COLLECTOR CURRENT : IC (mA) Fig.1 Grounded Emitter Propagation Characteristics Fig.2 Ground Emitter Output Caracteristics Fig.3 DC Current Gain vs. Collector Current ( Ι ) COLLECTOR SATURATION VOLTAGE VCE(sat)(V) 1000 V DC CURRENT GAIN hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Ta=25°C 500 1 IC/IB=10 200 100 Ta=100 25 -40 100 IC/IB=50 50 20 20 10 10 20 0.1 Ta=100 25 -40 10 0.001 5 50 100 200 500 1A 2A 0.01 0.1 1 10 COLLECTOR CURRENT : IC (mA) 0.01 0.001 0.01 0.1 1 10 COLLECTOR CURRENT Ic(A) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( Ι ) COLLECTOR CURRENT Ic(A) Fig.4 DC Current Gain vs. Collector Current ( ) Fig.6 Collector-Enitter Saturation Voltage vs. Collector Current ( ) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) BASE SATURATION VOLTAGE : VBE(sat) (V) 2 TRANSITION FREQUENCY : fT (MHz) Ta=25°C 1000 500 Ta=25°C VCE=5V 1000 500 Cib 200 100 50 Cob 1 IC/IB=10 0.5 Ta=25°C f=1MHz IE=0A IC=0A 200 100 0.2 50 0.1 20 10 5 10 20 50 100 200 500 1A 2A 20 −1 -2 −5 −10 −20 −50 −100 −200 −500 −1A 0.5 1 2 5 10 20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-Emitter Saturation Voltage vs. Collector Current Fig.8 Transition Frequency vs. Emitter Current Fig.9 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage Rev.A 3/5 MP6Z2 Transistors 10 Ta=25 Normalized Transient Thermal Resistance : r(t) COLLECTOR CURRENT : IC (A) 100m 1 10ms 1ms 0.1 Ta=25 Single Pulse 0.1 1 DC 0.01 Pulse width : Pw(s) 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Normalized Thermal Resistance (Element) Fig.11 Safe Operating Area VCE= −3V COLLECTOR CURRENT : IC (mA) −0.5 COLLECTOR CURRENT : IC (A) −200 −100 −50 −20 −10 −5 −2 −1 −1.75mA DC CURRENT GAIN : hFE −1000 Ta=100°C 25°C −500 −40°C Ta=25°C −2.5mA 500 −2.25mA Ta=25°C VCE= −6V −3V −1V −0.4 −2mA −1.5mA −1.25mA −1mA −750μA −500μA 200 −0.3 100 −0.2 50 −0.1 −250μA 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2 BASE TO EMITTER VOLTAGE : VBE (V) 0 0 −0.4 −0.8 −1.2 IB=0A −1.6 −2 20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded Emitter Propagation Characteristics Fig.2 Grounded Emitter Output Characteristics Fig.3 DC Current Gain vs. Collector Curren ( ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 500 Ta=100°C 25°C −25°C 200 VCE= −3V −500 Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) −500 lC/lB=10 DC CURRENT GAIN : hFE −200 −200 −100 −50 100 −100 IC/IB=50 Ta=100°C 25°C −40°C 50 −50 20 10 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 −20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC Current Gain vs. Collector Current ( ) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Vurrent ( ) Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current ( ) Rev.A 4/5 MP6Z2 Transistors COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) BASE SATURATION VOLTAGE : VBE(sat)(V) TRANSITION FREQUENCY : fT (MHz) Ta=25°C −1 IC /IB=10 −0.5 500 Ta=25°C VCE= −5V 300 200 100 50 Cib Ta=25°C f=1MHz IE=0A IC=0A Cob 200 100 −0.2 −0.1 −0.05 20 10 50 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 COLLETOR CURRENT : IC (mA) 5 10 20 50 100 200 500 1000 2000 −0.5 −1 −2 −5 −10 −20 −30 EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Base-Emitter Saturation Voltage vs. Collector current Fig.8 Gain Bandwidth Product vs. Emitter Current Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 10 -10 Ta=25 Normalized Transient Thermal Resistance : r(t) COLLECTOR CURRENT : IC (A) 100m 10ms 1ms -11 DC 0.1 -0.1 Ta=25 Single Pulse 1 -1 10 -10 100 -100 0.01 -0.01 0.1 -0.1 Pulse width : Pw(s) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Normalized Thermal Resistance (Element) Fig.11 Safe Operating Area Rev.A 5/5 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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