MPSA06

SSTA06 / MMSTA06 / MPSA06 Transistors NPN General Purpose Transistor SSTA06 / MMSTA06 / MPSA06 !Features 1) BVCEO < 80V.( IC=1mA) 2) Complements the SSTA56 / MMSTA56 / MPSA56. !External dimensions (Units : mm) SSTA06 2.9±0.2 1.9±0.2 0.95 0.95 (1) (2) 0.95 +0.2 −0.1 0.45±0.1 2.4±0.2 1.3+0.2 −0.1 0~0.1 0.2Min. !Package, marking and packaging specifications Part No. Packaging type Mark Code Basic ordering unit (pieces) SSTA06 SST3 R1G T116 3000 MMSTA06 SMT3 R1G T146 3000 MPSA06 TO-92 T93 3000 (3) +0.1 0.15 −0.06 0.4 +0.1 −0.05 All terminals have same dimensions ROHM : SST3 (1) Emitter (2) Base (3) Collector MMSTA06 2.9±0.2 1.9±0.2 0.95 0.95 1.1+0.2 −0.1 0.8±0.1 1.6 +0.2 −0.1 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power SSTA06, MMSTA06 dissipation MPSA06 Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 80 80 4 0.5 0.2 0.625 150 -55~+150 Unit V V V A W ˚C ˚C (3) 0.4 +0.1 −0.05 +0.1 0.15 −0.06 2.8±0.2 !Absolute maximum ratings (Ta=25°C) (1) (2) 0~0.1 0.3~0.6 2.3 All terminals have same dimensions ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector 4.8±0.2 MPSA06 4.8±0.2 3.7±0.2 (12.7Min.) (1) (2) 5 (3) 2.5 +0.3 −0.1 0.45±0.1 2.5Min. 0.5±0.1 ROHM : TO-92 EIAJ : SC-43 (1) Emitter (2) Base (3) Collector !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Symbol BVCBO BVCEO ICBO ICEO VCE(sat) VBE(ON) hFE fT Min. 4 80 100 100 100 Typ. Max. 0.1 1 0.25 1.2 Unit V V µA V V MHz IC=100µA IC=1mA VCB=80V VCE=60V IC/IB=100mA/10mA VCE/IB=1V/100mA VCE=1V, IC=10mA VCE=1V, IC=100mA VCE=2V, IE= −10mA, f=100MHz Conditions SSTA06 / MMSTA06 / MPSA06 Transistors !Electrical characteristics curves 100 COLLECTOR CURRENT : IC (mA) Ta=25˚C 500µA COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V) 450µA 400µA 350µA 300µA 250µA Ta=25˚C IC / IB=10 0.3 80 60 0.2 40 200µA 150µA 20 100µA 50µA 0.1 Ta=125˚C 25˚C IB=0µA 0 0 5.0 1.0 2.0 3.0 4.0 COLLECTOR-EMITTER VOLTAGE : VCE (V) 0 −40˚C 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter output characteristics Fig.2 Collector-emitter saturation voltage vs. collector current 1000 Ta=25˚C DC CURRENT GAIN : hFE 5V VCE=10V 100 3V 1V 10 0.1 1.0 10 100 COLLECTOR CURRENT : IC (mA) 1000 Fig.3 DC current gain vs. collector current ( I ) Ta=25˚C VCE=5V Ta=125˚C 25˚C −40˚C ASE EMITTER SATURATION VOLTAGEV : BE(sat) (V) 1000 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 10 100 1000 COLLECTOR CURRENT : IC (mA) 125˚C Ta=−40˚C 25˚C Ta=25˚C IC / IB=10 DC CURRENT GAIN : hFE 100 10 0.1 1.0 10 COLLECTOR CURRENT IC : (mA) 100 1000 Fig.4 DC current gain vs. collector current ( II ) Fig.5 Base-emitter saturation voltage vs. collector current SSTA06 / MMSTA06 / MPSA06 Transistors 1.8 BASE EMITTER VOLTAGE : VBE(ON) (V) 100 Ta=25˚C VCE=5V CAPACITANCE (pF) 1000 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1 Ta=−40˚C 25˚C 125˚C Cib 10 Cob CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz) Ta=25˚C f=1MHz Ta=25˚C VCE=5V 100 10 100 1000 COLLECTOR CURRENT : IC (mA) 0.5 1 2 5 10 20 REVERSE BIAS VOLTAGE (V) 50 10 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.6 Grounded emitter propagation characteristics Fig.7 Input / output capacitance vs. voltage Fig.8 Gain bandwidth product vs. collector current