PN2907A

UMT2907A / SST2907A / MMST2907A / PN2907A Transistors PNP Medium Power Transistor (Switching) UMT2907A / SST2907A / MMST2907A / PN2907A !Features 1) BVCEO< -60V (IC=-10mA) 2) Complements the UMT2222A / SST2222A / MMST2222A / PN2222A. !External dimensions (Units : mm) UMT2907A 2.0±0.2 1.3±0.1 0.65 0.65 (1) (2) 0.2 0.9±0.1 0.7±0.1 1.25±0.1 2.1±0.1 0~0.1 (3) !Package, marking and packaging specifications Part No. Packaging type Marking Code Basic ordering unit (pieces) UMT2907A SST2907A MMST2907A PN2907A UMT3 R2F T106 3000 SST3 R2F T116 3000 SMT3 R2F T146 3000 TO-92 T93 3000 ROHM : UMT3 EIAJ : SC-70 0.3+0.1 −0 All terminals have same dimensions 0.15±0.05 0.1~0.4 (1) Emitter (2) Base (3) Collector SST2907A (1) 2.9±0.2 1.9±0.2 0.95 0.95 (2) 0.95 +0.2 −0.1 0.45±0.1 1.3+0.2 −0.1 2.4±0.2 0~0.1 0.2Min. (3) All terminals have same dimensions +0.1 0.15 −0.06 0.4 +0.1 −0.05 !Absolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current UMT2907A, Collector power SST2907A, dissipation MMST2907A PN2907A Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC Limits -60 -60 -5 -0.6 0.2 0.625 150 -55~+150 Unit V V V A ROHM : SST3 (1) Emitter (2) Base (3) Collector MMST2907A (1) 2.9±0.2 1.9±0.2 0.95 0.95 (2) 1.1+0.2 −0.1 0.8±0.1 PC W (3) 1.6+0.2 −0.1 2.8±0.2 0~0.1 All terminals have same dimensions ˚C ˚C ROHM : SMT3 EIAJ : SC-59 0.4 +0.1 −0.05 +0.1 0.15 −0.06 0.3~0.6 (1) Emitter (2) Base (3) Collector PN2907A 4.8±0.2 4.8±0.2 3.7±0.2 (12.7Min.) (1) (2) 5 (3) 2.5 +0.3 −0.1 0.45±0.1 2.3 2.5Min. 0.5±0.1 ROHM : TO-92 EIAJ : SC-43 (1) Emitter (2) Base (3) Collector UMT2907A / SST2907A / MMST2907A / PN2907A Transistors !Electrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Symbol BVCBO BVCEO BVEBO ICBO ICES IEBO VCE(sat) VBE(sat) Min. −60 −60 −5 − − − − − 0.6 − 75 100 DC current transfer ratio hFE 100 100 50 200 − − − − − − − − Typ. − − − − − − − − − − − − − − − − − − − − − − − − Max. − − − −100 −100 −100 −0.4 −1.6 −1.3 −2.6 − − − 300 − − 8 30 50 10 40 100 80 30 MHz pF pF ns ns ns ns ns ns − Unit V V V nA nA V V IC=10µA IC=10mA IE=10µA VCB=−50V VCB=−30V VEB=−3V IC/IB=−150mA/−15mA IC/IB=−500mA/−50mA IC/IB=−150mA/−15mA IC/IB=−500mA/−50mA VCE=−10V, IC=−0.1mA VCE=−10V, IC=−1mA VCE=−10V, IC=−10mA VCE=−10V, IC=−150mA VCE=−10V, IC=−500mA VCE=−20V, IC=−50mA, f=100MHz VCB=−10V, f=100kHz VEB=−2V, f=100kHz VCC=−30V, VBE(OFF)=−1.5V, IC=−150mA, IB1=−15mA VCC=−30V, VBE(OFF)=−1.5V, IC=−150mA, IB1=−15mA VCC=−30V, VBE(OFF)=−1.5V, IC=−150mA, IB1=−15mA VCC=−30V, IC=−150mA, IB1=IB2=−15mA VCC=−30V , IC=−150mA, IB1=IB2=−15mA VCC=−30V, IC=−150mA, IB1=IB2=−15mA Conditions Transition frequency Collector output capacitance Emitter input capacitance Turn-on time Delay time Rise time Turn-off time Storage time Fall time fT Cob Cib ton td tr toff tstg tf !Electrical characteristic curves Ta=25˚C COLLECTOR CURRENT : IC (mA) 600 BASE-EMITTER SATURATION VOLTAGE : VBE (sat) (V) 100 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Ta=25˚C IC / IB=10 500 400 50 300 200 100 1B=0µA 0 0 10 5 COLLECTOR-EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter output characteristics Fig.2 Base-emitter saturation voltage vs. collector current 1000 Ta=25˚C DC CURRENT GAIN : hFE VCE=10V 100 1V 10 0.1 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 Fig.3 DC current gain vs. collector current ( I ) UMT2907A / SST2907A / MMST2907A / PN2907A Transistors 1000 VCE=10V DC CURRENT GAIN : hFE Ta=125˚C Ta=25˚C 100 Ta=−55˚C 10 0.1 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 Fig.4 DC current gain vs. collector current ( II ) 1000 COLLECTOR-EMITTER SATURATION VOLTAGE : VCE (sat) (V) Ta=25˚C VCE=10V f=1kHz Ta=25˚C IC / IB=10 0.3 AC CURRENT GAIN : hFE 0.2 100 0.1 10 0.1 1.0 10 COLLECTOR CURRENT : IC (mA) 100 1000 0 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.5 AC current gain vs. collector current Fig.6 Collector-emitter saturation voltage vs. collector current CURRENT GAIN-BANDWIDTH PRODUCT : fT (MHz) BASE-EMITTER ON VOLTAGE : VBE(on) (V) COLLECTOR-EMITTER VOLTAGE : VCE(V) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Ta=25˚C VCE=10V 1000 100 100MHz 300MHz 10 200MHz Ta=25˚C VCE=10V Ta=25˚C 100 250MHz 1 200MHz 0.1 1 10 100 1000 COLLECTOR CURRENT : IC (mA) 10 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.7 Grounded emitter propagation characteristics Fig.8 Gain bandwidth product vs. collector current Fig.9 Gain bandwidth product UMT2907A / SST2907A / MMST2907A / PN2907A Transistors 1000 500 Ta=25˚C VCC=30V IC / IB=10 100 Ta=25˚C f=1MHz Ta=25˚C IC / IB=10 CAPACITANCE (pF) 10 Cob 100 VCC=30V 10V RISE TIME : tr (ns) Cib TURN ON TIME : ton (ns) 100 10 1 0.1 10 1 10 REVERSE BIAS VOLTAGE (V) 100 1 10 100 1000 COLLECTOR CURRENT : IC (mA) 5 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.10 Input/output capacitance vs. voltage Fig.11 Turn-on time vs.collector current Fig.12 Rise time vs. collector current 1000 Ta=25˚C VCC=30V IC=10IB1=10IB2 1000 Ta=25˚C VCC=30V IC=10IB1=10IB2 STORAGE TIME : ts (ns) 100 10 FALL TIME : tf (ns) 1 10 100 1000 COLLECTOR CURRENT : IC (mA) 100 10 1 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.13 Storage time vs. collector current Fig.14 Fall time vs. collector current