QS5Y1TR

Data Sheet Midium Power Transistors (±30V / ±3A) QS5Y1  Structure PNP/NPN Silicon epitaxial planar transistor  Dimensions (Unit : mm) TSMT5 SOT-25T  Features 1) Low saturation voltage, typically V CE (sat) = -0.40V (Max.) (I C / I B= -1A / -50mA) V CE (sat) = 0.40V (Max.) (I C / I B= 1A / 50mA) (1) Tr.1 Base (2) Emitter (3) Tr.2 Base (4) Tr.2 Collector (5) Tr.1 Collector 2) High speed switching  Applications Low Frequency Amplifier Driver  Packaging specifications Type Abbreviated symbol : Y01  Inner circuit (Unit : mm) Package TSMT5 Code TR Basic ordering unit (pieces) 3000 (5) (4) Tr.1 (1) Tr.1 Base (2) Emitter (3) Tr.2 Base (4) Tr.2 Collector (5) Tr.1 Collector  Absolute maximum ratings (Ta = 25C) 　 Parameter Symbol Limits Unit Collector-base voltage VCBO -30 V Collector-emitter voltage Emitter-base voltage VCEO -30 -6 -3 -6 V V A A Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage Emitter-base voltage VCEO VEBO IC ICP *1 30 6 V V 3 6 A A Collector current DC Pulsed VEBO IC ICP *1 (1) Tr.2 (2) (3) 　 Parameter Collector current DC Pulsed 　 Parameter Power dissipation Junction temperature Range of storage temperature Symbol PD *2 PD PD *3 Tj Tstg *3 Limits Unit 0.5 1.25 W/Total W/Total 0.9 W/Element 150 -55 to 150 C C *1 Pw=10ms, Single Pulse *2 Mounted on a recommended land. *3 Mounted on a 25 x 25 x 0.8[mm] ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/7 2011.02 - Rev.A QS5Y1 Data Sheet Electrical characteristics (Ta=25°C) 　 Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage Parameter BVCEO -30 - - V IC= -1mA Conditions Collector-base breakdown voltage BVCBO -30 - - V IC= -100μA Emitter-base breakdown voltage BVEBO -6 - - V IE= -100μA Collector cut-off current ICBO - - -1 A VCB= -30V Emitter cut-off current IEBO A VEB= -4V - - -1 VCE(sat)*1 - -200 -400 hFE 200 - 500 - VCE= -2V, I C= -500mA - 300 - MHz VCE= -10V IE=100mA, f=100MHz Cob - 26 - pF Turn-on time ton *2 - 35 - ns Storage time tstg *2 - 210 - ns t f *2 - 15 - ns Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO 30 - - V IC= 1mA Collector-base breakdown voltage BVCBO 30 - - V IC= 100μA Emitter-base breakdown voltage BVEBO 6 - - V IE= 100μA Collector cut-off current ICBO - - 1 A VCB= 30V Emitter cut-off current IEBO - - 1 A VEB= 4V *1 VCE(sat) - 200 400 hFE 200 - 500 - - 270 - MHz Collector-emitter staturation voltage DC current gain Transition frequency Collector output capacitance Fall time fT *1 mV IC=-1A, IB=-50mA VCB= -10V, I E=0A f=1MHz IC= -1.5A, I B1= -150mA, _ -12V IB2=150mA, VCC ~ *1 Pulsed *2 See switching time test circuit 　 Parameter Collector-emitter staturation voltage DC current gain Transition frequency fT *1 mV IC= 1A, IB= 50mA Collector output capacitance Cob - 16 - pF Turn-on time ton *2 - 25 - ns Storage time tstg *2 - 300 - ns t f *2 - 20 - ns Fall time Conditions VCE= 2V, IC= 500mA VCE= 10V IE=-100mA, f=100MHz VCB= 10V, IE=0A f=1MHz IC= 1.5A, I B1= 150mA, _ 12V IB2=-150mA, V CC ~ *1 Pulsed *2 See switching time test circuit www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/7 2011.02 - Rev.A Data Sheet 　 QS5Y1 Electrical characteristic curves (Ta=25 C) 〈Tr.1〉 Fig.1 Typical Output Characteristics Fig.2 DC Current Gain vs. Collector Current (Ⅰ) -5.0mA -2.5mA 1000 -0.5 Ta=25℃ -0.4 DC CURRENT GAIN :hFE COLLECTOR CURRENT :IC[A] -2.0mA -1.5mA -0.3 -1.0mA -0.2 VCE=-5V -2V 100 IB=-0.5mA -0.1 Ta=25℃ 10 0.0 0.0 -0.5 -1.0 -1.5 -1 -2.0 -10 COLECTOR TO EMITTER VOLTAGE:VCE[V] -10000 Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current(Ⅰ) 1000 -1 COLLECTOR SATURATION VOLTAGE :VCE(sat)[V] VCE=-2V DC CURRENT GAIN :hFE -1000 COLLECTOR CURRENT :IC[mA] Fig.3 DC Current Gain vs. Collector Current(Ⅱ) Ta=125°C 75°C 25°C -40°C 100 Ta=25°C Pulsed -0.1 IC/IB=50 20 10 -0.01 -0.001 10 -1 -10 -100 -1000 -1 -10000 -10 COLLECTOR CURRENT :IC[mA] -100 -1000 -10000 COLLECTOR CURRENT :IC[mA] Fig.5 Collector-Emitter Saturation Voltage vs.Collector Current (Ⅱ) Fig.6 Ground Emitter Propagation Characteristics -1 -10000 VCE=-2V IC/IB=20 Pulsed COLLECTOR CURRENT :IC[mA] COLLECTOR SATURATION VOLTAGE :VCE(sat)[V] -100 -0.1 Ta=125°C 75°C 25°C -40°C -1000 Ta=125°C 75°C 25°C -40°C -100 -10 -1 -0.01 -1 -10 -100 -1000 0 -10000 -0.4 -0.6 -0.8 -1 -1.2 -1.4 BASE TO EMITTER VOLTAGE :VBE[V] COLLECTOR CURRENT :IC[mA] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. -0.2 3/7 2011.02 - Rev.A Data Sheet 　 QS5Y1 Fig.7 Emitter input capacitance vs. Emitter-Base Voltage Collector output capacitance vs.Collector-Base Voltage Fig8. Gain Bandwidth Product vs. Emitter Current 1000 Ta=25°C f=1MHz IE=0A IC=0A TRANSITION FREQUENCY :fT[MHz] COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) 1000 Cib 100 Cob 10 100 Ta=25°C VCE=-10V Pulsed 1 -0.1 10 -1 -10 10 -100 COLLECTOR - BASE VOLTAGE : VCB (V) EMITTER - BASE VOLTAGE : VEB (V) 100 1000 EMITTER CURRENT :IE[mA] Fig9. Safe Operating Area -10 COLLECTOR CURRENT : IC (A) 1ms -1 10ms 100ms -0.1 DC (Mounted on a recommended land) -0.01 Ta=25°C When one element operated Single non repetitive pulse -0.001 -0.1 -1 -10 -100 COLLECTOR TO EMITTER VOLTAGE :VCE(V) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/7 2011.02 - Rev.A Data Sheet 　 QS5Y1 〈Tr.2〉 Fig.1 Typical Output Characteristics Fig.2 DC Current Gain vs. Collector Current ( I ) 5mA 2.5mA 0.5 1000 Ta=25℃ 0.4 DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC[A] 2mA 1.5mA 0.3 1.0mA 0.2 0.1 VCE=5V 2V 100 IB=0.5mA Ta=25℃ 10 0.0 0 0.5 1 1.5 1 2 1000 10000 COLLECTOR CURRENT : IC[mA] Fig3. DC Current Gain vs. Collector Current ( II ) Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I ) 1 COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] VCE=2V Ta=125°C 75°C 25°C -40°C 100 Ta=25℃ Pulsed 0.1 0.01 IC/IB=50 20 10 0.001 10 1 10 100 1000 1 10000 10 100 1000 10000 COLLECTOR CURRENT : IC[mA] COLLECTOR CURRENT : IC[mA] Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II ) Fig.6 Ground Emitter Propagation Characteristics 1 10000 VCE=2V COLLECTOR CURRENT : IC[mA] COLLECTOR SATURATION VOLTAGE : VCE(sat)[V] 100 COLECTOR TO EMITTER VOLTAGE :VCE[V] 1000 DC CURRENT GAIN : hFE 10 0.1 Ta=125°C 75°C 25°C -40°C 0.01 1000 Ta=125°C 75°C 25°C -40°C 100 10 IC/IB=20 Pulsed 0.001 1 1 10 100 1000 0 10000 COLLECTOR CURRENT : IC[mA] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0.2 0.4 0.6 0.8 1 1.2 1.4 BASE TO EMITTER VOLTAGE : VBE[V] 5/7 2011.02 - Rev.A Data Sheet 　 QS5Y1 Fig.7 Emitter Input Capacitance vs. Emitter-Base Voltage Collector Output Capacitance vs. Collector-Base Voltage Fig.8 Gain Bandwidth Product vs. Emitter Current 1000 Ta=25°C f=1MHz IE=0A IC=0A Cib TRANSITION FREQUENCY : fT[MHz] COLLECTOR OUTPUT CAPACITANCE : Cob(pF) EMITTER INPUT CAPACITANCE : Cib(pF) 1000 100 10 Cob 1 Ta=25°C VCE=10V Pulsed 100 10 0.1 1 10 100 -10 COLLECTOR - BASE VOLTAGE : VCB (V) EMITTER - BASE VOLTAGE : VEB (V) -100 -1000 EMITTER CURRENT : IE[mA] Fig.9 Safe Operating Area 10 COLLECTOR CURRENT : IC [A] 1ms 10ms 1 100ms 0.1 DC (Mounted on a recommended land) 0.01 Ta=25°C When one element operated Single non repetitive pulse 0.001 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE[V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/7 2011.02 - Rev.A QS5Y1 Data Sheet  Switching time test circuit RL=8.2Ω 　 IB1 VIN IC Pw VCC~_ -12V IB2 _ 50μs Pw ~ DUTY CYCLE≦1% IB2 BASE CURRENT WAVEFORM IB1 ton COLLECTOR CURRENT WAVEFORM tstg tf 90% IC 10% 　 RL=8.2Ω VIN I B1 IC V CC~ _ 12V IB2 Pw ~ _50μs Pw DUTY CYCLE≦1% BASE CURRENT WAVEFORM IB1 IB2 COLLECTOR CURRENT WAVEFORM ton tstg tf 90% IC 10% www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/7 2011.02 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A