QS6J3TR

QS6J3 Transistors Small switching (−20V, −1.5A) QS6J3 zExternal dimensions (Unit : mm) TSMT6 2.8 1.6 (6) (4) (3) (5) 2.9 (2) 0.4 (1) 1pin mark 0.85 0.16 zFeatures 1) Two Pch MOSFET transistors in a single TSMT6 package. 2) Pch Treueh MOSFET have a low on-state resistance with a fast switching. 3) Nch Treueh MOSFET is reacted a low voltage drive (2.5V). Each lead has same dimensions zApplications Switch Abbreviated symbol : J03 zEquivalent circuit zStructure Silicon P-channel MOSFET (6) (5) (4) ∗1 zPackaging specifications ∗2 Package Type ∗2 Taping TR Code Basic ordering unit (pieces) 3000 ∗1 QS6J3 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Tr1 (2) Tr1 (3) Tr2 (4) Tr2 (5) Tr2 (6) Tr1 Source Gate Drain Source Gate Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Range of Storage temperature Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP PD Tch Tstg Limits −20 ±12 ±1.5 ±6.0 −0.75 −6.0 1.25 150 −55 to +150 Unit V V A A A A W / Total °C °C ∗1 ∗1 ∗2 ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board zThermal resistance Parameter Channel to ambient Symbol Rth (ch-a) Limits 100 Unit °C / W / Total ∗ ∗ Mounted on a ceramic board 1/3 QS6J3 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. IGSS − Gate-source leakage Drain-source breakdown voltage V(BR) DSS −20 Zero gate voltage drain current IDSS − VGS (th) −0.7 Gate threshold voltage − Static drain-source on-state RDS (on) − resistance − 1.0 Yfs Forward transfer admittance Ciss − Input capacitance Coss Output capacitance − Reverse transfer capacitance Crss − Turn-on delay time td (on) − Rise time tr − Turn-off delay time td (off) − Fall time tf − Total gate charge Qg − Gate-source charge Qgs − Gate-drain charge Qgd − Typ. − − − − 155 170 310 − 270 40 35 10 12 45 20 3.0 0.8 0.85 Max. ±10 − −1 −2.0 215 235 430 − − − − − − − − − − − Unit µA V µA V mΩ mΩ mΩ S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±12V, VDS=0V ID= −1mA, VGS=0V VDS= −20V, VGS=0V VDS= −10V, ID= −1mA ID= −1.5A, VGS= −4.5V ID= −1.5A, VGS= −4V ID= −0.75A, VGS= −2.5V VDS= −10V, ID= −0.75A VDS= −10V VGS=0V f=1MHz ID= −0.75A VDD −15V VGS= −4.5V RL=20Ω RG=10Ω VDD −15V RL=10Ω VGS= −4.5V RG=10Ω ID= −1.5A ∗ ∗ ∗ ∗ ∗ ∗ ∗Pulsed zBody diode (Source-drain) Parameter Symbol Min. Typ. Max. VSD − − −1.2 Forward voltage Conditions Unit V IS= −0.75A, VGS=0V zElectrical characteristic curves 100 Coss Crss 10 0.01 0.1 1 10 tf 100 td (off) td (on) 10 tr 1 0.01 100 0.1 DRAIN-SOURCE VOLTAGE : −VDS (V) DRAIN CURRENT : −ID (A) 10 1 0.1 VDS= −10V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.01 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 GATE-SOURCE VOLTAGE : −VGS (V) Fig.4 Typical Transfer Characteristics STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Fig.1 Typical Capacitance vs. Drain-Source Voltage 1 8 5 4 3 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 TOTAL GATE CHARGE : Qg (nC) Fig.2 Switching Characteristics Fig.3 Dynamic Input Characteristics 10 Ta=25°C Pulsed ID= −1.5A 400 ID= −0.75A 300 200 100 0 6 DRAIN CURRENT : −ID (A) 500 0 Ta=25°C VDD= −15V ID= −1.5A RG=10Ω Pulsed 7 10 SOURCE CURRENT : −IS (A) Ciss Ta=25°C VDD= −15V VGS= −4.5A RG=10Ω Pulsed GATE-SOURCE VOLTAGE : −VGS (V) 1000 Ta=25°C f=1MHz VGS=0V SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1000 2 4 6 8 10 12 GATE-SOURCE VOLTAGE : −VGS (V) Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Ta=25°C VGS=0V Pulsed 1 0.1 0.01 0.0 0.5 1.0 1.5 2.0 SOURCE-DRAIN VOLTAGE : −VSD (V) Fig.6 Source Current vs. Source-Drain Voltage 2/3 QS6J3 VGS= −4.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 1000 100 10 0.1 1 10000 1000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) 10000 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (mΩ) Transistors VGS= −4V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 100 10 0.1 10 DRAIN CURRENT : −ID (A) 1 10000 1000 100 10 0.1 10 1 DRAIN CURRENT : −ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Drain Current (Ι) VGS= −2.5V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 10 DRAIN CURRENT : −ID (A) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) Fig.9 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙΙ) zMeasurement circuits Pulse Width VGS ID VDS VGS 10% 50% 90% 50% RL 10% D.U.T. 10% RG VDD VDS 90% td(on) 90% td(off) tr ton Fig.10 Switching Time Measurement Circuit tr toff Fig.11 Switching Waveforms VG VGS ID VDS RL IG(Const) D.U.T. Qg VGS Qgs RG Qgd VDD Charge Fig.12 Gate Charge Measurement Circuit Fig.13 Gate Charge Waveform 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0