QS8M13TCR

Data Sheet 4V Drive Nch + Pch MOSFET QS8M13 Dimensions (Unit : mm)  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET TSMT8 (7) (6) (5) or (8) e N co ew m m D es en ig de ns d f Features 1) Low on-resistance. 2) High power package(TSMT8). 3) Low voltage drive(4V drive). (1) (2) (3) (4) Abbreviated symbol : M13  Application Switching Inner circuit (8) (7) (6) (5)  Packaging specifications Type Package Code Basic ordering unit (pieces) QS8M13 Taping TCR 3000  (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗2 ∗2 ∗1 ∗1 (1) (2) (3) (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE  Absolute maximum ratings (Ta = 25C) Parameter Drain-source voltage Unit VDSS 30 30 V V VGSS 20 20 ID 6 5 A Pulsed Continuous IDP Is *1 18 1.0 18 1.0 A A Pulsed Isp *1 18 18 A R Source current (Body Diode) Limits Tr1 : N-ch Tr2 : P-ch Continuous Gate-source voltage Drain current Symbol Power dissipation ot Channel temperature Range of storage temperature *2 PD Tch Tstg 1.5 W / TOTAL 1.25 150 55 to 150 W / ELEMENT C C *1 Pw10s, Duty cycle1% N *2 Mounted on a ceramic board. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/10 2011.05 - Rev.A Data Sheet 　 QS8M13  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=20V, VDS=0V 30 - - V ID=1mA, VGS=0V IDSS - - 1 A VDS=30V, VGS=0V Gate threshold voltage VGS (th) 1.0 - 2.5 V VDS=10V, ID=1mA Static drain-source on-state resistance - 20 28 ID=6A, VGS=10V RDS (on)* - 25 35 m ID=6A, VGS=4.5V 28 39 Forward transfer admittance l Yfs l* 3.0 - - S VDS=10V, ID=6A Input capacitance Ciss - 390 - pF VDS=10V ID=6A, VGS=4.0V e N co ew m m D es en ig de ns d f Zero gate voltage drain current or Drain-source breakdown voltage V (BR)DSS Conditions Output capacitance Coss - 150 - pF VGS=0V Reverse transfer capacitance Crss - 70 - pF f=1MHz Turn-on delay time td(on)* - 8 - ns ID=3A, VDD 15V tr * - 40 - ns VGS=10V td(off)* - 35 - ns RL=5 Rise time Turn-off delay time Fall time tf * - 7 - ns RG=10 Total gate charge Qg * - 5.5 - nC ID=6A, VDD 15V Gate-source charge Gate-drain charge Qgs * Qgd * - 1.5 2.1 - nC nC VGS=5V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Min. Typ. Max. Unit - - 1.2 V Conditions Is=6A, VGS=0V N ot R *Pulsed Symbol VSD * www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/10 2011.05 - Rev.A Data Sheet 　 QS8M13  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=20V, VDS=0V Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current 30 IDSS Conditions - - V ID=1mA, VGS=0V - 1 A VDS=30V, VGS=0V V VDS=10V, ID=1mA Gate threshold voltage VGS (th) 1.0 - 2.5 Static drain-source on-state resistance - 28 39 * RDS (on) - 40 56 - 45 63 Forward transfer admittance l Yfs l * 3 - - S VDS=10V, ID=5A Input capacitance Ciss - 1100 - pF VDS=10V ID=5A, VGS=10V or m ID=2.5A, VGS=4.5V e N co ew m m D es en ig de ns d f ID=2.5A, VGS=4.0V Output capacitance Coss - 150 - pF VGS=0V Reverse transfer capacitance Crss - 130 - pF f=1MHz Turn-on delay time td(on)* - 9 - ns ID=2.5A, VDD 15V tr * - 40 - ns VGS=10V td(off)* - 90 - ns RL=6 Rise time Turn-off delay time Fall time tf * - 55 - ns RG=10 Total gate charge Qg * - 10 - nC ID=5A, VDD 15V Gate-source charge Gate-drain charge Qgs * Qgd * - 3.6 3.0 - nC nC VGS=5V *Pulsed Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Min. Typ. Max. Unit - - 1.2 V Conditions Is=5A, VGS=0V N ot R *Pulsed Symbol VSD * www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/10 2011.05 - Rev.A Data Sheet 　 QS8M13 Electrical characteristic curves (Ta=25C) 〈Tr.1(Nch)〉 Fig.2 Typical Output Characteristics (Ⅱ) Fig.1 Typical Output Characteristics (Ⅰ) 6 6 Ta=25℃ Pulsed VGS=10.0V 4 Drain Current : ID [A] VGS=4.0V VGS=3.0V VGS=2.8V 3 2 1 VGS=4.0V 4 VGS=2.8V 3 VGS=2.5V 2 e N co ew m m D es en ig de ns d f Drain Current : ID [A] VGS=4.5V VGS=2.5V VGS=4.5V Ta=25℃ Pulsed VGS=10.0V 5 or 5 VGS=2.0V 1 VGS=2.0V 0 0 0.2 0.4 0.6 0.8 0 1 0 2 Drain-Source Voltage : VDS [V] 8 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 1000 Ta=25℃ Pulsed 100 10 1 0.01 Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mΩ] 6 Drain-Source Voltage : VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current VGS=4.0V VGS=4.5V VGS=10V 0.1 1 10 VGS=10V pulsed 10 1 0.01 100 0.1 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current R VGS=4V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] N ot Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 0.1 1 Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 1 0.01 10 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10 1000 VGS=4.5V pulsed 1 0.01 1 Drain Current : ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C 100 Drain Current : ID [A] Static Drain-Source On-State Resistance RDS(on) [mΩ] 4 0.1 1 10 Drain Current : ID [A] 4/10 2011.05 - Rev.A Data Sheet 　 QS8M13 Fig.8 Typical Transfer Characteristics Fig.7 Forward Transfer Admittance vs. Drain Current 10 VDS=10V pulsed 1 Drain Currnt : ID [A] 1 Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 e N co ew m m D es en ig de ns d f Forward Transfer Admittance Yfs [S] VDS=10V pulsed or 10 0.01 0.01 0.001 0.01 0.1 1 0.001 10 0.0 0.5 1.0 Drain Current : ID [A] VGS=0V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Source Current : Is [A] 2.5 3.0 3.5 100 10 Ta= 125℃ Ta= 75°C Ta= 25°C Ta= - 25°C 1 0.1 0.0 0.5 1.0 1.5 Ta=25℃ Pulsed 80 ID=3.0A 40 20 0 2.0 ID=6.0A 60 0 2 R Fig.11 Switching Characteristics 100 8 10 Fig.12 Dynamic Input Characteristics VDD≒15V VGS=10V RG=10Ω Ta=25°C Pulsed tf 6 10 Ta=25°C VDD=15V ID=6A Pulsed 8 Gate-Source Voltage : VGS [V] N ot 1000 4 Gate-Source Voltage : VGS [V] Source-Drain Voltage : VSD [V] Switching Time : t [ns] 2.0 Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.9 Source Current vs. Source-Drain Voltage 0.01 1.5 Gate-Source Voltage : VGS [V] td(off) 10 6 4 2 td(on) tr 1 0.01 0.1 1 0 10 Drain Current : ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 0 2 4 6 8 10 Total Gate Charge : Qg [nC] 5/10 2011.05 - Rev.A Data Sheet 　 QS8M13 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area 10000 100 Ta=25°C f=1MHz VGS=0V Operation in this area is limited by RDS(on) (VGS = 10V) 100 Coss or Drain Current : ID [ A ] Ciss PW = 100μs 1 PW = 1ms PW = 10ms e N co ew m m D es en ig de ns d f Capacitance : C [pF] 10 1000 0.1 Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Crss 10 0.01 0.1 1 10 0.01 100 0.1 1 10 DC Operation 100 Drain-Source Voltage : VDS [ V ] Drain-Source Voltage : VDS [V] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width Normalized Transient Thermal Resistance : r（t） 10 Ta=25°C Single Pulse : 1Unit 1 0.1 0.01 0.001 0.0001 Mounted on a ceramic board. （30mm × 30mm × 0.8mm) Rth(ch-a)=100°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.01 0.1 1 10 100 1000 N ot R Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/10 2011.05 - Rev.A Data Sheet 　 QS8M13 〈Tr.2(Pch)〉 Fig.1 Typical Output Characteristics (Ⅰ) Fig.2 Typical Output Characteristics (Ⅱ) 5 5 VGS=-10.0V VGS=-4.0V 4 VGS=-3.0V Drain Current : -ID [A] Drain Current : -ID [A] 4 3 VGS=-2.8V 2 VGS=-10.0V VGS=-4.5V 3 VGS=-4.0V or VGS=-4.5V VGS=-2.8V Ta=25°C Pulsed VGS=-3.0V Ta=25°C Pulsed 2 e N co ew m m D es en ig de ns d f VGS=-2.5V 1 1 VGS=-2.5V 0 0 0.2 0.4 0.6 0.8 0 1 0 2 Drain-Source Voltage : -VDS [V] 8 10 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 1000 VGS=-10V pulsed 100 10 1 0.01 Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=25°C Pulsed VGS=-4.0V VGS=-4.5V VGS=-10V 0.1 1 10 100 10 1 0.01 100 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 R Static Drain-Source On-State Resistance RDS(on) [mΩ] N ot Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 0.1 100 1000 VGS=-4.5V pulsed 1 0.01 10 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 1 Drain Current : -ID [A] Drain Current : -ID [A] Static Drain-Source On-State Resistance RDS(on) [mΩ] 6 Drain-Source Voltage : -VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current Static Drain-Source On-State Resistance RDS(on) [mΩ] 4 1 10 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 100 10 1 0.01 100 0.1 1 10 100 Drain Current : -ID [A] Drain Current : -ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. VGS=-4V pulsed 7/10 2011.05 - Rev.A Data Sheet 　 QS8M13 Fig.7 Forward Transfer Admittance vs. Drain Current Fig.8 Typical Transfer Characteristics 100 10 VDS=-10V pulsed VDS=-10V pulsed 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.01 0.01 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.1 0.1 1 0.01 0.001 10 0.0 0.5 1.0 VGS=0V pulsed 3.0 3.5 Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=25°C Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 1 0.1 0.5 1.0 1.5 1000 ID=-5.0A 60 40 20 0 2.0 ID=-2.5A 0 2 4 6 8 Gate-Source Voltage : -VGS [V] Fig.11 Switching Characteristics Fig.12 Dynamic Input Characteristics N ot 10 10 VDD≒-15V VGS=-10V RG=10Ω Ta=25°C Pulsed tf td(off) tr 10 td(on) 0.1 1 6 4 2 0 10 Drain Current : -ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. Ta=25°C VDD=-15V ID=-5A Pulsed 8 100 0.01 80 Source-Drain Voltage : -VSD [V] R 0.0 Gate-Source Voltage : -VGS [V] Source Current : -Is [A] 2.5 100 10 Switching Time : t [ns] 2.0 Fig.10 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.9 Source Current vs. Source-Drain Voltage 1 1.5 Gate-Source Voltage : -VGS [V] Drain Current : -ID [A] 0.01 or Drain Currnt : -ID [A] 1 e N co ew m m D es en ig de ns d f Forward Transfer Admittance Yfs [S] 10 0 5 10 15 20 Total Gate Charge : Qg [nC] 8/10 2011.05 - Rev.A Data Sheet 　 QS8M13 Fig.13 Typical Capacitance vs. Drain-Source Voltage Fig.14 Maximum Safe Operating Area 10000 100 Operation in this area is limited by RDS(on) (VGS = -10V) Ta=25°C f=1MHz VGS=0V PW = 100μs Ciss Coss 100 PW = 1ms 1 PW = 10ms e N co ew m m D es en ig de ns d f Crss or Drain Current : -ID [ A ] Capacitance : C [pF] 10 1000 0.1 Ta=25°C Single Pulse : 1Unit Mounted on a ceramic board. (30mm × 30mm × 0.8mm) 10 0.01 0.1 1 10 0.01 100 Drain-Source Voltage : -VDS [V] 0.1 1 10 DC Operation 100 Drain-Source Voltage : -VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width Normalized Transient Thermal Resistance : r（t） 10 Ta=25°C Single Pulse : 1Unit 1 0.1 0.01 0.001 0.0001 Mounted on a ceramic board. (30mm × 30mm × 0.8mm) Rth(ch-a)=100°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.001 0.01 0.1 1 10 100 1000 N ot R Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/10 2011.05 - Rev.A Data Sheet 　 QS8M13  Measurement circuits Pulse width ID VDS 90% 50% 10% VGS VDS RL 50% 10% D.U.T. VDD RG 10% 90% td(on) 90% td(off) tr tf ton Fig.1-1 Switching Time Measurement Circuit toff or VGS Fig.1-2　Switching Waveforms e N co ew m m D es en ig de ns d f VG VGS ID VDS Qg RL IG(Const.) VGS D.U.T. Qgs Qgd VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Pulse Width VGS ID VDS VGS 10% 50% 90% RL 10% D.U.T. RG 50% VDD VDS 10% 90% td(on) tr ton 90% td(off) tf toff Fig.1-2　Switching Waveforms R Fig.1-1 Switching Time Measurement Circuit ot VG ID VDS VGS N IG(Const.) RL D.U.T. Qg VGS Qgs Qgd VDD Fig.2-1 Gate Charge Measurement Circuit Charge Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10/10 2011.05 - Rev.A Notice N ot R e N co ew m m D es en ig de ns d fo r Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A