QSL12TR

QSL12 Transistors General purpose transistor (isolated transistor and diode) e N co ew m m D es en ig de ns d f or QSL12 A 2SD2675 and a RB461F are housed independently in a TSMT5 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver QSL12 ROHM : TSMT5 zStructure Silicon epitaxial planar transistor Schottky barrier diode (5) 0.95 0.95 1.9 2.9 0.85 0 to 0.1 0.3 to 0.6 0.7 0.16 (3) (4) (2) zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package (1) 0.4 2.8 1.6 Each lead has same dimensions Abbreviated symbol : L12 zEquivalent circuit (5) (4) Di2 R Tr1 (2) (3) N ot (1) zPackaging specifications Type QSL12 Package TSMT5 Marking Code L12 Basic ordering unit(pieces) 3000 TR Rev.A 1/4 QSL12 Transistors zAbsolute maximum ratings (Ta=25°C) Tr1 Collector current Unit V V V A ∗1 A W / ELEMENT ∗2 °C °C e N co ew m m D es en ig de ns d f Power dissipation Junction temperature Range of storage temperature Symbol Limits VCBO 30 VCEO 30 VEBO 6 IC 1 ICP 2 Pc 0.9 Tj 150 Tstg −40 to +125 or Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Di2 + + ∗1 Single pulse, Pw=1ms ∗2 Mounted on a 25mm 25mm t0.8mm ceramic substrate Parameter Symbol VRM Peak reverse voltage Reverse voltage (DC) VR Average rectified forward current IF Forward current surge peak (60HZ, 1∞) IFSM Power dissipation PD Junction temperature Tj Range of storage temperature Tstg Limits 25 20 700 3 0.7 125 −40 to +125 ∗ Mounted on a 25mm+ 25mm+ t0.8mm ceramic substrate Tr1&Di2 Parameter Symbol Total power disipation PD Limits 0.5 1.25 Unit V V mA A W / ELEMENT °C °C Unit W / TOTAL W / TOTAL ∗ ∗1 ∗2 + + ∗1 Each terminal mounted on a recommended land. ∗2 Mounted on a 25mm 25mm t0.8mm ceramic substrate. zElectrical characteristics (Ta=25°C) Tr1 Parameter Symbol Min. Typ. Max. Unit 30 − − V IC=10µA Collector-emitter breakdown voltage BVCEO 30 − − V IC=1mA Emitter-base breakdown voltage BVEBO 6 − − V IE=10µA VCB=30V R BVCBO Collector cutoff current ICBO − − 100 nA Emitter cutoff current IEBO − − 100 nA VEB=6V VCE(sat) − 120 350 mV IC/IB=500mA/25mA DC current gain hFE 270 − 680 − VCE/IC=2V/100mA Transition frequency fT − 320 − Cob − 7 − ot Collector-emitter saturation voltage N Conditions Collector-base breakdown voltage Collector output capacitance ∗ MHz VCE=2V, IE= −100mA, f=100MHz ∗ VCB=10V, IE=0A, f=1MHz pF ∗ Pulsed Di2 Symbol Min. Typ. Max. Unit Reverse current VF IR − − 450 − 490 200 mV µA IF=700mA VR=20V Reverse recovery fime trr − 9 − ns IF=IR=100mA, Irr=0.1IR Parameter Forward voltage Conditions Rev.A 2/4 QSL12 Transistors zElectrical characteristic curves Ta= −40°C 100 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. collector current VCE=2V Pulsed Ta=25°C 0.1 Ta=100°C Ta= −40°C 0.01 0.001 0 0.5 1 R Fig.4 Grounded emitter propagation characteristics Ta=25°C VCE=2V 1 0.1 IC/IB=50/1 IC/IB=20/1 Ta=25°C Ta= −40°C 0.01 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) 0.01 IC/IB=10/1 0.001 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.3 Collector-emitter saturation voltage vs. collector current 1000 1000 Ta=25°C VCE=2V f=100MHz 100 0.1 1 100 tstg tf tr tdon 10 Ta=25°C VCE=5V IC/IB=20/1 1 0.01 0.1 EMITTER CURRENT : IE (A) COLLECTOR CURRENT : IC (A) Fig.5 Gain bandwidth product vs. emitter current Fig.6 Switching time 1 Ta=25°C IC=0A f=1MHz Cib N ot EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=100°C 0.1 10 0.01 1.5 BASE TO EMITTER CURRENT : VBE (V) 100 VCE(sat) 10 Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (A) 1 Ta= −40°C Ta=25°C Ta=100°C VBE(sat) 1 SWITCHING TIME : (ns) 10 0.001 IC/IB=20/1 Pulsed or Ta=25°C 10 e N co ew m m D es en ig de ns d f DC CURRENT GAIN : hFE Ta=100°C VCE=2V Pulsed COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1000 BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) Tr1 Cob 10 1 0.01 0.1 1 10 100 EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage Rev.A 3/4 QSL12 Transistors Di2 1000m °C =1 Ta °C 10m Ta =− 25 °C 25 100m 1m 100µ Ta=25°C 10µ Ta= −25°C 1µ e N co ew m m D es en ig de ns d f 1m Ta=125°C 10m or REVERSE CURRENT : IR (A) 100m 1 Ta =2 5 FORWARD CURRENT : IF (A) 10 0.1µ 0.1m 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 50 60 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig.8 Forward characteristics Fig.9 Reverse characteristics 70 N ot R 0 Rev.A 4/4 Appendix or Notes e N co ew m m D es en ig de ns d f No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. R About Export Control Order in Japan N ot Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1