R5005CNJ

Data Sheet 10V Drive Nch MOSFET R5005CNJ  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) LPTS 10.1 4.5 1.3 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. 13.1 9.0 3.0 1.0 1.24 0.78 (3) (1) Gate (2) Drain (3) Source 5.08 (1) (2) 2.7  Application Switching  Packaging specifications Type R5005CNJ Package Code Basic ordering unit (pieces) Taping TL 1000   Inner circuit ∗1 ∗2  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25C (1) Gate (2) Drain (3) Source (1) (2) 1.2 2.54 0.4 (3) 1 ESD PROTECTION DIODE 2 BODY DIODE Limits 500 30 5 20 5 20 2.5 1.6 40 150 55 to 150 Unit V V A A A A A mJ W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP IS ISP IAS EAS PD Tch Tstg *3 *1 *3 *1 *2 *2 *4 *3 Limited only by maximum temperature allowed. *4 TC=25C  Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) Limits 3.125 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.10 - Rev.A R5005CNJ  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) RDS (on) * l Yfs l* Ciss Coss Crss td(on) * * td(off) * tf * Qg * Qgs * Qgd * tr Min. 500 2.5 1.5 Typ. 1.3 2.7 320 180 15 20 25 40 20 10.8 3.2 4.4 Max. 10 100 4.5 1.6 Unit A V A V  S pF pF pF ns ns ns ns nC nC nC Conditions VGS=25V, VDS=0V ID=1mA, VGS=0V VDS=500V, VGS=0V VDS=10V, ID=1mA ID=2.5A, VGS=10V VDS=10V, ID=2.5A VDS=25V VGS=0V f=1MHz VDD 250V, ID=2.5A VGS=10V RL=100 RG=10 VDD 250V ID=5.0A VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Conditions Unit V IS=5.0A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A R5005CNJ Electrical characteristic curves 　 Data Sheet Fig.1 Typical Output Characteristics ( Ⅰ) 1 VGS=10.0V VGS=9.0V VGS=8.0V VGS=7.5V VGS=7.0V VGS=6.5V VGS=6.0V Ta=25℃ pulsed 5 Fig.2 Typical Output Characteristics ( Ⅱ) 10 Fig.3 Typical Transfer Characteristics VDS= 10V Pulsed DRAIN CURRENT : ID (A) 0.8 Drain Current : ID [A] 4 Drain Current : ID [A] 0.6 3 VGS=10V VGS=9.0V VGS=8.0V VGS=7.5V VGS=7.0V Ta=25℃ pulsed VGS=6.5V VGS=6.0V VGS=5.5V 1 0.1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.4 VGS=5.0V 2 0.2 VGS=4.5V 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] 1 VGS=5.0V VGS=4.5V 0.01 0 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] 0.001 0 1 2 3 4 5 6 7 GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Gate Threshold Voltage vs. Channel Temperature GATE THRESHOLD VOLTAGE: VGS(th) (V) 6 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 5 4 3 2 1 0 -50 0 50 100 150 CHANNEL TEMPERATURE: Tch (℃) VDS= 10V ID= 1mA 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 5 Fig.6 Static Drain-Source On-State Resistance vs. Gate Source Voltage Ta=25℃ pulsed 4 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VGS= 10V Pulsed 3 ID= 5.0A 2 ID= 2.5A 1 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.1 0.01 0.001 0 0.01 0.1 1 10 100 0 5 10 15 DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 5 10 Fig.8 Forward Transfer Admittance vs. Drain Current 10 VDS= 10V Pulsed Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage VGS= 0V Pulsed SOURCE CURRENT : IS (A) 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VGS= 10V Pulsed 4 1 3 ID= 5.0A 2 ID= 2.5A 1 0.1 0.1 0.01 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.01 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0 -50 0 50 100 150 0.001 0.001 0.001 0.01 0.1 1 10 0 0.5 1 1.5 CHANNEL TEMPERATURE: Tch (℃) DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.10 - Rev.A R5005CNJ 　 Data Sheet Fig.10 Typical Capacitance vs. Drain-Source Voltage 10000 REVERSE RECOVERY TIME: trr (ns) 1000 Fig.11 Reverse Recovery Time vs.Source Current 10000 Fig.12 Switching Characteristics 1000 Ciss 100 Coss 10 Ta= 25℃ f= 1MHz VGS= 0V 0.01 0.1 1 10 Crss SWITCHING TIME : t (ns) tf 1000 CAPACITANCE : C (pF) Ta= 25℃ VDD= 250V VGS= 10V RG= 10Ω Pulsed 100 100 td(off) Ta= 25℃ di / dt= 100A / μs VGS= 0V Pulsed 10 0.1 1 10 100 10 tr td(on) 1 100 1000 DRAIN-SOURCE VOLTAGE : VDS (V) 1 0.01 0.1 1 10 SOURCE CURRENT : IS (A) DRAIN CURRENT : ID (A) Fig.13 Dynamic Input Characteristics 15 GATE-SOURCE VOLTAGE : VGS (V) 10 Ta= 25℃ VDD= 250V ID= 5A RG= 10Ω Pulsed 5 0 0 5 10 15 TOTAL GATE CHARGE : Qg (nC) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.10 - Rev.A R5005CNJ  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS IAS VDD EAS = 1 2 L IAS 2 D.U.T. RG VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A