R5009FNX

Data Sheet 10V Drive Nch MOSFET R5009FNX  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 2.5 Features 1)Fast reverse recovery time (trr) 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage 　 VGSS garanteed to be ±30V . 5) Drive circuits can be simple. 6) Parallel use is easy. 15.0 12.0 8.0 1.3 1.2 14.0 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6  Application Switching Inner circuit  Packaging specifications Type R5009FNX Package Basic ordering unit (pieces) Bulk 500  (1) Gate (2) Drain (3) Souce (1) (2) ∗1 (3)  Absolute maximum ratings (Ta  25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Power dissipation (Tc=25℃) Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500μH, VDD=50V, Rg=25 ,starting Tch=25  C *3 Limited only by maximum temperature allowed. *1 Body Diode Limits 500 30 9 36 9 36 4.5 5.4 50 150 55 to +150 Unit V V A A A A A mJ W C C VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP SP *3 *1 IS *3 *1 I IAS EAS PD Tch Tstg *2 *2  Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) Limits 2.5 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.07 - Rev.A R5009FNX  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 500 2.0 4.0 Typ. 0.65 5.7 630 400 25 24 20 50 40 18 3.5 5.5 Max. 100 100 4.0 0.84 Unit nA V uA V  S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±30V, VDS=0V ID=1mA, VGS=0V VDS=500V, VGS=0V VDS=10V, ID=1mA ID=4.5A, VGS=10V ID=4.5A, VDS=10V VDS=25V VGS=0V f=1MHz ID=4.5A, VDD VGS=10V RL=55.6 RG=10 ID=9.0A, VDD 250V VGS=10V 250V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Reverse Recovery Time *Pulsed Symbol VSD * trr * Min. 48 Typ. 78 Max. 1.5 108 Unit V ns Conditions Is=9.0A, VGS=0V Is=9.0A, di/dt=100A/ s www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.07 - Rev.A R5009FNX Electrical characteristics curves Data Sheet 15 VGS= 8.0V VGS= 7.0V VGS= 6.5V VGS= 10V Ta=25°C Pulsed DRAIN CURRENT : ID[A] 8 7 6 5 4 3 2 1 0 VGS= 4.5V 100 VGS= 8.0V VGS= 7.0V VGS= 6.5V VGS= 6.0V VGS= 10V VDS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta=  25°C DRAIN CURRENT : ID[A] 10 VGS= 6.0V VGS= 5.5V DRAIN CURRENT : ID[A] 10 1 0.1 0.01 0.001 5 Ta=25°C Pulsed VGS= 5.5V VGS= 5.0V VGS= 5.0V VGS= 4.5V 0 0 20 40 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.2 Typical Output Characteristics( Ⅱ) 0 1 2 3 4 5 6 7 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.1 Typical Output Characteristics( Ⅰ) GATE-SOURCE VOLTAGE : VGS[V] Fig.3 Typical Transfer Characteristics GATE THRESHOLD VOLTAGE: VGS(th) (V) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on)[Ω] 10 Ta= 125°C Ta= 75°C Ta= 25°C Ta=  25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[Ω] 100 VDS= 10V ID=1mA 10 Ta= 25°C Pulsed 2 Ta= 25°C Pulsed 1.5 ID= 9A 1 1 1 0.5 ID= 4.5A 0.1 -50 0 50 100 150 0.1 0.1 1 10 100 0 0 5 10 15 CHANNEL TEMPERATURE: Tch (℃) Fig.4 Gate Threshold Voltage vs. Channel Temperature DRAIN-CURRENT : ID[A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current GATE-SOURCE VOLTAGE : VGS (V) Fig.6 Static Drain-Source On-State Resistance vs. Gate Source Voltage 2 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[Ω] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1.5 10 SOURCE CURRENT : Is [A] VGS= 10V Pulsed 100 VDS= 10V Pulsed 100 VGS=0V Pulsed 10 1 ID= 9A ID= 4.5A 1 0.5 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta=  25°C 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta=  25°C 0.01 0.1 0 -50 0 50 100 150 0.01 0.01 0.1 1 10 100 0 0.5 1 1.5 CHANNEL TEMPERATURE: Tch (℃) Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature DRAIN-CURRENT : ID[A] Fig.8 Forward Transfer Admittance vs. Drain Current SOURCE-DRAIN VOLTAGE : VSD [V] Fig.9 Reverse Drain Current vs. Sourse-Drain Voltage www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.07 - Rev.A R5009FNX Data Sheet REVERSE RECOVERY TIME : trr[ns] SWITCHING TIME : t [ns] td(off) 1000 tf Ta=25°C VDD=250V VGS=10V RG=10Ω Pulsed GATE-SOURCE VOLTAGE : VGS [V] 1000 10000 Ta=25°C Pulsed 12 10 8 6 4 2 0 Ta=25°C VDD=250V ID= 9A Pulsed 0 5 10 15 20 25 30 100 100 td(on) 10 tr 0.01 0.1 1 10 100 10 0.1 1 10 100 1 SOURCE-CURRENT : IS[V] Fig.10 Reverse Recovery Time vs. Source Current DRAIN-CURRENT : ID[A] Fig.11 Switching Characteristics TOTAL GATE CHARGE : Qg [nC] Fig.12 Dynamic Input Characteristics 10000 Ciss DRAIN CURRENT : ID (A) CAPACITANCE : C [pF] 1000 1000 100 10 Operation in this area is limited by R DS(ON) (VGS=10V) 100 Crss 10 Ta=25°C f=1MHz VGS=0V 0.01 0.1 1 Coss PW=100us 1 0.1 0.01 PW=1ms PW =10ms Ta = 25°C Single Pulse 1 10 100 1000 0.1 1 10 100 1000 10000 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.13 Typical Capacitance vs. Drain-Source Voltage NORMARIZED TRANSIENT THERMAL 　RESISTANCE : r (t) 10 DRAIN-SOURCE VOLTAGE : VDS[V] Fig.14 Maximum Safe Operating Aera 1 0.1 Ta = 25°C Single Pulse Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 44.7 °C/W 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.07 - Rev.A R5009FNX  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit VGS Fig.1-2　Switching Waveforms VG ID RL VDS Qg VGS Qgs Qgd IG(Const.) D.U.T. VDD Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS D.U.T. RG IAS VDD EAS = 1 2 L IAS 2 VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.07 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A