R5011FNX

10V Drive Nch MOSFET R5011FNX Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 Features 1) Fast reverse recovery time. 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Parallel use is easy. 15.0 12.0 8.0 2.5 1.3 1.2 14.0 0.8 (1) Gate (2) Drain (3) Source 2.54 (1) (2) (3) 2.54 0.75 2.6 Applications Switching Inner circuit Packaging specifications Type Package Basic ordering unit (pieces) R5011FNX Bulk 500 ∗1 (1) (2) (3) (1) Gate (2) Drain (3) Source ∗1 Body Diode Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum temperature allowed Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg ∗3 ∗1 ∗3 ∗1 ∗2 ∗2 Limits 500 ±30 ±11 ±44 11 44 5.5 8.1 50 150 −55 to +150 Unit V V A A A A A mJ W °C °C Thermal resistance Parameter Channel to case Symbol Rth(ch-c) Limits 2.5 Unit °C/W www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/5 2009.03 - Rev.A R5011FNX Electrical characteristics (Ta=25°C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗ Pulsed Data Sheet Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) | Yfs | Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 500 − 2.0 − 4.5 − − − − − − − − − − Typ. − − − − 0.40 − 950 580 30 26 28 75 30 30 7 12 Max. ±100 − 100 4.0 0.52 − − − − − − − − − − − Unit nA V µA V Ω S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±30V, VDS=0V ID=1mA, VGS=0V VDS=500V, VGS=0V VDS=10V, ID=1mA ID=5.5A, VGS=10V VDS=10V, ID=5.5A VDS=25V VGS=0V f=1MHz VDD 250V, ID=5.5A VGS=10V RL=45.5Ω RG=10Ω VDD 250V ID=11A VGS=10V RL=22.7Ω / RG=10Ω Body diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Forward recovery time ∗ Pulsed Symbol VSD ∗ trr ∗ Min. − 55 Typ. − 85 Max. 1.5 115 Unit V ns Conditions IS= 11A, VGS=0V IF= 11A, di/dt=100A/µs www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/5 2009.03 - Rev.A R5011FNX Electrical characteristic curves Data Sheet 100 PW = 100us DRAIN CURRENT: ID (A) 20 Ta= 25°C Pulsed 10V DRAIN CURRENT: ID (A) 8.0V 7.0V 6.5 10 8 6 6.5V 4 2 0 6.0V 5.0V VGS= 4.5V Ta= 25°C Pulsed 8.0V 7.0V 5.5V 10V DRAIN CURRENT : ID (A) 10 15 6.0V 1 Operation in this area is limited PW = 1ms Tc = 25°C DC operation Single Pulse 0.1 1 10 100 1000 10 5.5V 5.0V VGS= 4.5V 0.1 5 0.01 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE: VDS (V) Fig.2: Typical output characteristics(Ⅰ) 0 1 2 3 4 5 DRAIN-SOURCE VOLTAGE : VDS ( V ) Fig.1 Maximum Safe Operating Aera DRAIN-SOURCE VOLTAGE: VDS (V) Fig.3: Typical output DRAIN CURRENT : ID (A) 10 1 0.1 0.01 0.001 0.0 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 5 4 3 2 1 0 -50 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VDS= 10V Pulsed GATE THRESHOLD VOLTAGE: VGS(th) (V) 100 6 VDS= 10V ID= 1mA 10 VGS= 10V Pulsed 1 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.01 0.1 1 10 100 1.5 3.0 4.5 6.0 0 50 100 150 GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Typical Transfer Characteristics CHANNEL TEMPERATURE: Tch (°C) Fig.5 Gate Threshold Voltage vs. Channel Temperature DRAIN CURRENT : ID (A) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 5 10 15 ID= 5.5A ID= 11.0A Ta=25°C Pulsed 1.2 1 0.8 0.6 0.4 0.2 0 -50 VGS= 10V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 1.4 100 VDS= 10V Pulsed 10 ID= 11.0A 1 Ta= -25°C Ta= 25°C Ta= 75°C Ta= 125°C ID= 5.5A 0.1 0 50 100 150 0.01 0.01 0.1 1 10 100 GATE-SOURCE VOLTAGE : VGS (V) Fig.7 Static Drain-Source On-State Resistance vs. Gate Source CHANNEL TEMPERATURE: Tch (°C) Fig.8 Static Drain-Source On-State Resistance vs. Channel Tem perature DRAIN CURRENT : ID (A) Fig.9 Forward Transfer Admittance vs. Drain Current www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/5 2009.03 - Rev.A R5011FNX Data Sheet REVERSE DRAIN CURRENT : IDR (A) CAPACITANCE : C (pF) 10 VGS= 0V Pulsed 1000 Coss 100 Crss Ciss GATE-SOURCE VOLTAGE : VGS (V) 100 10000 15 10 1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.1 10 Ta= 25°C f= 1MHz VGS= 0V 0.01 0.1 1 10 100 1000 5 Ta= 25°C VDD= 250V ID= 11.0A RG= 10Ω Pulsed 0 10 20 30 40 0.01 0 0.5 1 1.5 1 0 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage DRAIN-SOURCE VOLTAGE : VDS (V) Fig.11 Typical Capacitance vs. Drain-Source Voltage TOTAL GATE CHARGE : Qg (nC) Fig.12 Dynamic Input Characteristics REVERSE RECOVERY TIME: trr (ns) 1000 Ta= 25°C di/dt= 100A/µs VGS= 0V Pulsed 100 10000 Ta= 25°C VDD= 250V VGS= 10V RG= 10Ω Pulsed SWITCHING TIME : t (ns) 1000 tf 100 td(off) 10 tr td(on) 10 0.1 1 10 100 1 0.1 1 10 100 REVERSE DRAIN CURRENT : IDR (A) Fig.13 Reverse Recovery Time vs.Reverse Drain Current DRAIN CURRENT : ID (A) Fig.14 Switching　Characteristics NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) 10 Ta = 25°C Single Pulse : 1Unit Rth（ch-a）（t） = ｒ（ t）×Rth（ch-a） Rth（ch-a） = 50.4°C/W 1 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/5 2009.03 - Rev.A R5011FNX Switching characteristics measurement circuit Data Sheet Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms IG(Const.) Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate charge waveform Fig.3-1 Avalanche measurement circuit Fig.3-2 Avalanche waveform www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 5/5 2009.03 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. 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