R5016FNX

Data Sheet 10V Drive Nch MOSFET R5016FNX  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 15.0 12.0 8.0 14.0 2.5 1.3 1.2 (1) Gate (2) Drain (3) Source 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6  Application Switching  Packaging specifications Type R5016FNX Package Code Basic ordering unit (pieces) Bulk 500   Inner circuit ∗1  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25°C (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE Limits 500 30 16 64 16 64 8 17.1 50 150 55 to 150 Unit V V A A A A A mJ W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID *3 IDP IS ISP *1 *3 *1 IAS *2 EAS *2 PD *4 Tch Tstg *3 Limited only by maximum channel temperature allowed. *4 TC=25°C  Thermal resistance Parameter Channel to Case * T C=25°C Symbol Rth (ch-c) * Limits 2.5 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.10 - Rev.A R5016FNX  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 500 3.0 6.2 Typ. 0.25 11 1700 1000 35 35 60 110 35 46 11 19 Max. 100 100 5.0 0.325 Unit nA V A V  S pF pF pF ns ns ns ns nC nC nC Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=500V, VGS=0V VDS=10V, ID=1mA ID=8A, VGS=10V VDS=10V, ID=8A VDS=25V VGS=0V f=1MHz VDD 250V, ID=8.0A VGS=10V RL=31.25 RG=10 VDD 250V ID=8.0A VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) Parameter Forward voltage Reverse recovery time *Pulsed Symbol VSD * trr * Min. 75 Typ. 100 Max. 1.5 125 Unit V ns Conditions IS=16A, VGS=0V IS=16A, VGS=0V di/dt=100A/ s www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.10 - Rev.A R5016FNX Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 5 Ta=25℃ pulsed 4 VGS=10V VGS=8V Drain Current : ID [A] 3 　 Data Sheet FIg.2 Typical Output Characteristics (Ⅱ) 20 Ta=25℃ pulsed VGS=10.0V VGS=8V 15 VGS=6.5V Drain Current : ID [A] VGS=7V VGS=7V VGS=6.5V VGS=6V 2 10 VGS=6V 5 VGS=5.5V 1 VGS=5.5V VGS=5V 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] 0 0 2 4 6 8 VGS=5V 10 Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics 100 VDS=10V pulsed 10 Gate Threshold Voltage : VGS(th) [V] Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 5 6 Fig.4 Gate Threshold Voltage vs. Channel Temperature VDS=10V ID=1mA pulsed Drain Currnt : ID [A] 1 4 0.1 3 0.01 0.001 2 3 4 5 6 7 8 Gate-Source Voltage : VGS [V] 2 -50 0 50 100 150 Channel Temperature : Tch [℃] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1 Static Drain-Source On-State Resistance : RDS(on) [Ω] VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [Ω] Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 0.6 VGS=10V pulsed ID=16A 0.4 ID=8A 0.2 0.1 0.1 1 10 100 Drain Current : ID [A] 0 -50 0 50 100 150 Channel Temperature : T ch [℃] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.10 - Rev.A R5016FNX 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 100 VDS=10V pulsed 100 Fig.8 Source Current vs. Source-Drain Voltage VGS=0V pulsed Forward Transfer Admittance Yfs [S] 10 Source Current : IS [A] 10 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.1 0.1 0.01 0.01 0.01 0.1 1 Drain Current : ID [A] 10 100 0 0.5 1 1.5 2 Source-Drain Voltage : VSD [V] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1 0.9 Static Drain-Source On-State Resistance RDS(on) [Ω] 0.8 1000 Switching Time : t [ns] 0.7 0.6 0.5 0.4 0.3 10 0.2 0.1 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Gate-Source Voltage : VGS [V] 1 0.01 ID=8A ID=16A Ta=25℃ pulsed 10000 Fig.10 Switching Characteristics tf VDD≒250V VGS=10V RG=10Ω Ta=25℃ Pulsed td(off) 100 tr td(on) 0.1 1 Drain Current : ID [A] 10 100 Fig.11 Dynamic Input Characteristics 12 Ta=25℃ VDD=250V ID=8A Pulsed Capacitance : C [pF] 100000 Fig.12 Typical Capacitance vs. Drain-Source Voltage 10 Gate-Source Voltage : VGS [V] 10000 Ta=25℃ f=1MHz VGS=0V 8 1000 Ciss 6 100 Coss 4 10 2 Crss 0 0 10 20 30 40 50 60 Total Gate Charge : Qg [nC] 1 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.10 - Rev.A R5016FNX 　 Data Sheet Fig.13 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r（t） Ta=25℃ Single Pulse 1 Rth(ch-a)=48.9℃/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 100 Drain Current : ID [ A ] 1000 Fig.14 Maximum Safe Operating Area 0.1 10 PW = 100μs 0.01 1 Operation in this area is limited by RDS(on) (VGS = 10V) PW = 1ms PW = 10ms 0.001 0.1 Ta=25℃ Single Pulse 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [ V ] Pulse width : Pw (s) Fig.15 Reverse Recovery Time vs. Source Current 1000 Ta=25℃ Vgs=0V di/dt=100A/us Pulsed Reverse Recovery Time : trr [ns] 100 10 0 1 10 100 Source Current : IS [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.10 - Rev.A R5016FNX  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS IAS VDD EAS = 1 2 L IAS 2 D.U.T. RG VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A