R5019ANJ

Data Sheet 10V Drive Nch MOSFET R5019ANJ  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) LPTS 10.1 4.5 1.3 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. 13.1 9.0 3.0 1.0 1.24 0.78 (3) (1) Gate (2) Drain (3) Source 5.08 (1) (2) 2.7  Application Switching  Packaging specifications Type R5019ANJ Package Code Basic ordering unit (pieces) Taping TL 1000   Inner circuit ∗1  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25C Limits 500 30 Unit V V A A A A A mJ W C C (1) Gate (2) Drain (3) Source (1) (2) 1.2 2.54 0.4 (3) 1 BODY DIODE VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg *3 *1 *3 *1 *2 *2 *4 19 76 19 76 9.5 24.3 100 150 55 to 150 *3 Limited only by maximum temperature allowed. *4 TC=25C  Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) Limits 1.25 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.10 - Rev.A R5019ANJ  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 500 2.5 6.5 Typ. 0.18 2050 1200 50 40 115 165 100 55 11 24 Max. 100 100 4.5 0.24 Unit nA V A V  S pF pF pF ns ns ns ns nC nC nC Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=500V, VGS=0V VDS=10V, ID=1mA ID=9.5A, VGS=10V VDS=10V, ID=9.5A VDS=25V VGS=0V f=1MHz VDD 250V, ID=9.5A VGS=10V RL=26.3 RG=10 VDD 250V ID=19A VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Unit V Conditions IS=19A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A R5019ANJ Electrical characteristic curves 　 Data Sheet Fig.1 Typical Output Characteristics ( Ⅰ) 5 Ta=25℃ VGS=10.0V pulsed VGS=8.0V VGS= 7.0V VGS=6.5V VGS=6.0V VGS=5.0V 2 18 16 14 Drain Current : ID [A] 12 10 8 6 4 VGS=4.5V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Drain-Source Voltage : VDS [V] 2 0 0 Fig.2 Typical Output Characteristics (Ⅱ) Ta=25℃ VGS=10.0V pulsed VGS=8.0V VGS=6.5V VGS=7.0V VGS=6.0V 100 Fig.3 Typical Transfer Characteristics DRAIN CURRENT : ID (A) 4 Drain Current : ID [A] 10 VDS= 10V Pulsed Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 3 1 0.1 VGS=5.0V 1 0.01 VGS=4.5 0.001 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 Drain-Source Voltage : VDS [V] GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Gate Threshold Voltage vs. Channel Temperature GATE THRESHOLD VOLTAGE: VGS(th) (V) 6 5 4 3 2 1 0 -50 0 50 100 150 CHANNEL TEMPERATURE: Tch (℃) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VDS= 10V ID= 1mA 10 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 0.5 Static Drain-Source On-State Resistance RDS(on) [Ω] Ta=25℃ pulsed VGS= 10V Pulsed 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.4 0.3 ID=19A 0.2 ID=9.5A 0.1 0.1 0.01 0.1 1 10 100 DRAIN CURRENT : ID (A) 0 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : VGS [V] Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature 0.5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) FORWARD TRANSFER ADMITTANCE : |Yfs| (S) VGS= 10V Pulsed 0.4 ID= 19.0A ID= 9.5A 0.2 100 Fig.8 Forward Transfer Admittance vs. Drain Current 100 VDS= 10V Pulsed SOURCE CURRENT : IS (A) 10 10 Fig.9 Source Current vs. Sourse-Drain Voltage VGS= 0V Pulsed 0.3 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 1 0.1 0.1 0.1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0 -50 -25 0 25 50 75 100 125 150 CHANNEL TEMPERATURE: Tch (℃) 0.01 0.01 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN CURRENT : ID (A) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.10 - Rev.A R5019ANJ 　 Data Sheet Fig.10 Typical Capacitance vs. Drain-Source Voltage 10000 Ciss CAPACITANCE : C (pF) 1000 GATE-SOURCE VOLTAGE : VGS (V) 15 Fig.11 Dynamic Input Characteristics 10000 REVERSE RECOVERY TIME: trr (ns) Ta= 25℃ VDD= 250V ID= 19A RG= 10Ω Pulsed Fig.12 Reverse Recovery Time vs.Source Current 10 1000 100 Crss 10 Ta= 25℃ f= 1MHz VGS= 0V 0.01 0.1 1 10 100 Coss 5 100 Ta= 25℃ di / dt= 100A / μs VGS= 0V Pulsed 0 1 10 100 1 1000 DRAIN-SOURCE VOLTAGE : VDS (V) 0 0 10 20 30 40 50 60 70 TOTAL GATE CHARGE : Qg (nC) 10 SOURCE CURRENT : IS (A) Fig.13 Switching Characteristics 10000 VDD= 250V VGS= 10V RG= 10Ω Ta= 25℃ Pulsed SWITCHING TIME : t (ns) 1000 td(off) 100 tf 10 tr 1 0.01 0.1 1 10 100 DRAIN CURRENT : ID (A) td(on) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.10 - Rev.A R5019ANJ  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS D.U.T. RG IAS VDD EAS = 1 2 L IAS 2 VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A