R5019ANX

Data Sheet 10V Drive Nch MOSFET R5019ANX  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 15.0 12.0 8.0 (1) Gate (2) Drain (3) Source 14.0 2.5 1.3 1.2 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6  Application Switching  Packaging specifications Type R5019ANX Package Code Basic ordering unit (pieces) Bulk 500   Inner circuit ∗1  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25C Limits 500 30 Unit V V A A A A A mJ W C C (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg *3 *1 *3 *1 *2 *2 *4 19 76 19 76 9.5 24.3 50 150 55 to 150 *3 Limited only by maximum temperature allowed. *4 TC=25C  Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) Limits 2.5 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.10 - Rev.A R5019ANX  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 500 2.5 6.5 Typ. 0.18 2050 1200 50 40 115 165 100 55 10 24 Max. 100 100 4.5 0.24 Unit nA V A V  S pF pF pF ns ns ns ns nC nC nC Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=500V, VGS=0V VDS=10V, ID=1mA ID=9.5A, VGS=10V VDS=10V, ID=9.5A VDS=25V VGS=0V f=1MHz VDD 250V, ID=9.5A VGS=10V RL=26.3 RG=10 VDD 250V ID=19A VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Unit V Conditions IS=19A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A R5019ANX Electrical characteristic curves 　 Data Sheet Fig.1 Typical Output Characteristics (Ⅰ) 5 Ta=25℃ pulsed 18 VGS=10.0V VGS=8.0V VGS= 7.0V VGS=6.5V VGS=6.0V VGS=5.0V 2 16 14 Drain Current : ID [A] 12 10 8 6 4 VGS=4.5V 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Drain-Source Voltage : VDS [V] 2 0 0 Fig.2 Typical Output Characteristics (Ⅱ) Ta=25℃ VGS=10.0V pulsed VGS=8.0V VGS=6.5V VGS=7.0V VGS=6.0V 100 Fig.3 Typical Transfer Characteristics DRAIN CURRENT : ID (A) 4 Drain Current : ID [A] 10 VDS= 10V Pulsed Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 3 1 0.1 VGS=5.0V 1 0.01 VGS=4.5V 0.001 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 Drain-Source Voltage : VDS [V] GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Gate Threshold Voltage vs. Channel Temperature GATE THRESHOLD VOLTAGE: VGS(th) (V) 6 5 4 3 2 1 0 -50 0 50 100 150 CHANNEL TEMPERATURE: Tch (℃) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VDS= 10V ID= 1mA 10 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 0.5 Ta=25℃ pulsed 0.4 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ Static Drain-Source On-State Resistance RDS(on) [Ω] VGS= 10V Pulsed 0.3 ID=19A 0.2 ID=9.5A 0.1 0.1 0.01 0.1 1 10 100 DRAIN CURRENT : ID (A) 0 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : VGS [V] Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature 0.5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VGS= 10V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 100 Fig.8 Forward Transfer Admittance vs. Drain Current 100 VDS= 10V Pulsed SOURCE CURRENT : IS (A) 10 10 VGS= 0V Pulsed Fig.9 Source Current vs. Sourse-Drain Voltage 0.4 0.3 ID= 19.0A ID= 9.5A 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 1 0.2 0.1 0.1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.1 0 -50 -25 0 25 50 75 100 125 150 CHANNEL TEMPERATURE: Tch (℃) 0.01 0.01 0.01 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN CURRENT : ID (A) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.10 - Rev.A R5019ANX 　 Data Sheet Fig.10 Typical Capacitance vs. Drain-Source Voltage 10000 Ciss CAPACITANCE : C (pF) 1000 GATE-SOURCE VOLTAGE : VGS (V) 15 Fig.11 Dynamic Input Characteristics 10000 REVERSE RECOVERY TIME: trr (ns) Ta= 25℃ VDD= 250V ID= 19A RG= 10Ω Pulsed Fig.12 Reverse Recovery Time vs. Source Current 10 1000 100 Crss 10 Ta= 25℃ f= 1MHz VGS= 0V 0.01 0.1 1 10 100 Coss 5 100 Ta= 25℃ di / dt= 100A / μs VGS= 0V Pulsed 0 1 10 100 1 1000 DRAIN-SOURCE VOLTAGE : VDS (V) 0 0 10 20 30 40 50 60 70 TOTAL GATE CHARGE : Qg (nC) 10 SOURCE CURRENT : IS (A) Fig.13 Switching Characteristics 10000 VDD≒250V VGS=10V RG=10W Ta=25℃ Pulsed SWITCHING TIME : t (ns) tf 1000 td(off) 100 10 tr 1 0.01 0.1 1 10 100 DRAIN CURRENT : ID (A) td(on) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.10 - Rev.A R5019ANX  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS IAS VDD EAS = 1 2 L IAS 2 D.U.T. RG VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A