R5021ANJ
Nch 500V 21A Power MOSFET
Datasheet
lOutline
VDSS
500V
RDS(on) (Max.)
0.22W
ID
21A
PD
100W
(2)
LPTS
(SC-83)
TO-263(D2PAK)
(1)
lFeatures
(3)
lInner circuit
1) Low on-resistance.
(1) Gate
(2) Drain
(3) Source
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
*1 Body Diode
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
lApplication
Switching Power Supply
Taping
Reel size (mm)
330
Tape width (mm)
24
Type
Basic ordering unit (pcs)
Taping code
1,000
TL
Marking
R5021ANJ
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
VDSS
500
V
Tc = 25°C
ID *1
21
A
Tc = 100°C
ID *1
10.2
A
84
A
Drain - Source voltage
Continuous drain current
Pulsed drain current
ID,pulse
*2
Gate - Source voltage
VGSS
30
V
Avalanche energy, single pulse
EAS *3
29.6
mJ
Avalanche energy, repetitive
EAR *4
6.7
mJ
Avalanche current
IAR *3
10.5
A
Power dissipation (Tc = 25°C)
PD
100
W
Junction temperature
Tj
150
°C
Tstg
-55 to +150
°C
dv/dt *5
15
V/ns
Range of storage temperature
Reverse diode dv/dt
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© 2012 ROHM Co., Ltd. All rights reserved.
1/13
2012.10 - Rev.B
Data Sheet
R5021ANJ
lAbsolute maximum ratings
Parameter
Symbol
Conditions
Values
Unit
50
V/ns
VDS = 400V, ID = 21A
Drain - Source voltage slope
dv/dt
Tj = 125°C
lThermal resistance
Values
Parameter
Symbol
Unit
Min.
Typ.
Max.
Thermal resistance, junction - case
RthJC
-
-
1.25
°C/W
Thermal resistance, junction - ambient
RthJA
-
-
80
°C/W
Soldering temperature, wavesoldering for 10s
Tsold
-
-
265
°C
lElectrical characteristics(Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Drain - Source breakdown
voltage
V(BR)DSS
VGS = 0V, ID = 1mA
500
-
-
V
Drain - Source avalanche
breakdown voltage
V(BR)DS
VGS = 0V, ID = 21A
-
580
-
V
Tj = 25C
-
0.1
100
mA
Tj = 125°C
-
-
1000
IGSS
VGS = 30V, VDS = 0V
-
-
100
nA
VGS (th)
VDS = 10V, ID = 1mA
2.5
-
4.5
V
-
0.17
0.22
W
Tj = 125°C
-
0.37
-
f = 1MHz, open drain
-
14.0
-
VDS = 500V, VGS = 0V
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
IDSS
VGS = 10V, ID = 10.5A
Static drain - source
on - state resistance
Gate input resistance
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© 2012 ROHM Co., Ltd. All rights reserved.
RDS(on) *6 Tj = 25°C
RG
2/13
W
2012.10 - Rev.B
Data Sheet
R5021ANJ
lElectrical characteristics(Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Transconductance
gfs *6
VDS = 10V, ID = 10.5A
7
14
-
Input capacitance
Ciss
VGS = 0V
-
2300
-
Output capacitance
Coss
VDS = 25V
-
1000
-
Reverse transfer capacitance
Crss
f = 1MHz
-
70
-
Effective output capacitance,
energy related
Co(er)
-
124
-
Effective output capacitance,
time related
Turn - on delay time
Rise time
Turn - off delay time
VGS = 0V
VDS = 0V to 400V
Co(tr)
126
-
VDD ⋍ 250V, VGS = 10V
-
47
-
tr *6
ID = 10.5A
-
70
-
td(off) *6
RL = 23.8W
-
200
400
RG = 10W
-
70
140
tf *6
Fall time
pF
pF
-
td(on) *6
S
ns
lGate Charge characteristics(Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Total gate charge
Qg *6
VDD ⋍ 250V
-
64
-
Gate - Source charge
Qgs *6
ID = 21A
-
11
-
Gate - Drain charge
Qgd *6
VGS = 10V
-
27
-
Gate plateau voltage
V(plateau)
VDD ⋍ 250V, ID = 21A
-
6.2
-
nC
V
*1 Limited only by maximum temperature allowed.
*2 Pw 10ms, Duty cycle 1%
*3 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C
*4 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C, f = 10kHz
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
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© 2012 ROHM Co., Ltd. All rights reserved.
3/13
2012.10 - Rev.B
Data Sheet
R5021ANJ
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Values
Parameter
Symbol
Inverse diode continuous,
forward current
Conditions
Unit
IS *1
Min.
Typ.
Max.
-
-
21
A
-
-
84
A
-
-
1.5
V
-
521
-
ns
-
7.7
-
mC
-
29.5
-
A
-
580
-
A/ms
Tc = 25°C
Inverse diode direct current,
pulsed
ISM *2
Forward voltage
VSD *6
VGS = 0V, IS = 21A
trr *6
Reverse recovery time
Reverse recovery charge
Qrr *6
Peak reverse recovery current
Irrm *6
Peak rate of fall of reverse
recovery current
dirr/dt
IS = 21A
di/dt = 100A/us
Tj = 25°C
lTypical Transient Thermal Characteristics
Symbol
Value
Rth1
0.0368
Rth2
0.154
Rth3
0.614
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© 2012 ROHM Co., Ltd. All rights reserved.
Unit
K/W
4/13
Symbol
Value
Unit
Cth1
0.00311
Cth2
0.0141
Cth3
0.251
Ws/K
2012.10 - Rev.B
Data Sheet
R5021ANJ
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
100
Operation in this
area is limited
by RDS(ON)
100
10
Drain Current : ID [A]
Power Dissipation : PD/PD max. [%]
120
80
60
40
20
PW = 100ms
1
PW = 1ms
PW = 10ms
0.1
Ta = 25ºC
Single Pulse
0.01
0
0
50
100
150
0.1
200
1
10
100
1000
Drain - Source Voltage : VDS [V]
Junction Temperature : Tj [°C]
Normalized Transient Thermal Resistance : r(t)
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
1000
100
10
Ta = 25ºC
Single Pulse
Rth(ch-a)(t) = ｒ(t)×Rth(ch-a)
Rth(ch-a) = 80ºC/W
1
0.1
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
0.01
0.001
0.0001
0.0001
0.01
1
100
Pulse Width : PW [s]
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© 2012 ROHM Co., Ltd. All rights reserved.
5/13
2012.10 - Rev.B
Data Sheet
R5021ANJ
lElectrical characteristic curves
Fig.5 Avalanche Power Losses
Fig.4 Avalanche Current vs Inductive Load
9000
14
Avalanche Current : IAR [A]
12
Avalanche Power Losses : PAR [W]
Ta = 25ºC
VDD = 50V , RG = 25W
VGF = 10V , VGR = 0V
10
8
6
4
2
0
0.01
0.1
1
10
100
Coil Inductance : L [mH]
8000
Ta = 25ºC
7000
6000
5000
4000
3000
2000
1000
0
1.0E+04
1.0E+05
1.0E+06
Frequency : f [Hz]
Fig.6 Avalanche Energy Derating Curve
vs Junction Temperature
Avalanche Energy : EAS / EAS max. [%]
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
Junction Temperature : Tj [ºC]
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© 2012 ROHM Co., Ltd. All rights reserved.
6/13
2012.10 - Rev.B
Data Sheet
R5021ANJ
lElectrical characteristic curves
Fig.8 Typical Output Characteristics(II)
Fig.7 Typical Output Characteristics(I)
22
10
20
VGS= 10.0V
18
VGS= 6.0V
16
Drain Current : ID [A]
Drain Current : ID [A]
Ta=25ºC
Pulsed
14
12
10
VGS= 5.0V
8
6
VGS= 4.5V
4
9
VGS= 10.0V
8
VGS= 6.5V
7
VGS= 6.0V
6
5
3
2
1
0
0
10
20
30
40
VGS= 5.0V
4
2
0
50
VGS= 4.5V
0
Drain - Source Voltage : VDS [V]
1
2
3
4
5
Drain - Source Voltage : VDS [V]
Fig.10 Tj = 150°C Typical Output
Characteristics(II)
Fig.9 Tj = 150°C Typical Output
Characteristics(I)
10
22
VGS= 10.0V
20
18
VGS= 6.0V
VGS= 10.0V
9
VGS= 6.5V
8
VGS= 6.5V
Drain Current : ID [A]
16
Drain Current : ID [A]
Ta=25ºC
Pulsed
14
12
10
VGS= 5.0V
8
6
VGS= 4.5V
4
Ta=150ºC
Pulsed
2
VGS= 6.0V
7
VGS= 5.0V
6
5
4
VGS= 4.5V
3
2
Ta=150ºC
Pulsed
1
0
0
0
10
20
30
40
50
0
2
3
4
5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
1
7/13
2012.10 - Rev.B
Data Sheet
R5021ANJ
Fig.11 Breakdown Voltage
vs. Junction Temperature
Fig.12 Typical Transfer Characteristics
800
100
VDS= 10V
Pulsed
750
10
Drain Current : ID [A]
Drain - Source Breakdown Voltage : V(BR)DSS [V]
lElectrical characteristic curves
700
650
600
1
0.1
0.01
550
500
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
0.001
-50
0
50
100
150
0
Junction Temperature : Tj [°C]
4
5
6
7
100
VDS= 10V
Pulsed
VDS= 10V
ID= 1mA
Transconductance : gfs [S]
Gate Threshold Voltage : VGS(th) [V]
3
Fig.14 Transconductance vs. Drain Current
6
4
3
2
1
0
-50
2
Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage
vs. Junction Temperature
5
1
0
50
100
1
Ta= -25ºC
Ta= 25ºC
Ta= 75ºC
Ta= 125ºC
0.1
0.01
0.01
150
Junction Temperature : Tj [°C]
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© 2012 ROHM Co., Ltd. All rights reserved.
10
0.1
1
10
100
Drain Current : ID [A]
8/13
2012.10 - Rev.B
Data Sheet
R5021ANJ
lElectrical characteristic curves
0.5
Ta=25ºC
Pulsed
0.4
0.3
ID=21A
0.2
ID=10.5A
0.1
0.0
0
2
4
6
8
Fig.16 Static Drain - Source On - State
Resistance vs. Junction Temperature
Static Drain - Source On-State Resistance
: RDS(on) [W]
Static Drain - Source On-State Resistance
: RDS(on) [W]
Fig.15 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
0.7
0.6
VGS= 10V
Pulsed
0.5
0.4
ID= 21.0A
0.3
0.2
ID= 10.5A
0.1
0
-50
0
50
100
150
Junction Temperature : Tj [ºC]
Static Drain - Source On-State Resistance
: RDS(on) [W]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
10
VGS = 10V
Pulsed
1
0.1
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
0.01
0.001
0.1
1
10
100
Drain Current : ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
9/13
2012.10 - Rev.B
Data Sheet
R5021ANJ
lElectrical characteristic curves
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Fig.19 Coss Stored Energy
100000
14
Coss Stored Energy : EOSS [uJ]
Ta = 25ºC
Capacitance : C [pF]
10000
Ciss
1000
Coss
100
10
Ta= 25ºC
f= 1MHz
VGS= 0V
Crss
12
10
8
6
4
2
0
1
0.01
0.1
1
10
100
0
1000
400
Drain - Source Voltage : VDS [V]
Fig.20 Switching Characteristics
Fig.21 Dynamic Input Characteristics
10000
15
tf
1000
td(on)
100
Ta = 25ºC
VDD≒250V
VGS = 10V
RGS= 10W
Pulsed
10
tr
Ta= 25ºC
VGS= 250V
ID= 21A
RG= 10W
Pulsed
td(off)
Capacitance : C [pF]
Switching Time : t [ns]
Drain - Source Voltage : VDS [V]
200
10
5
0
1
0.01
0.1
1
10
0
100
20
30
40
50
60
70
80
Total Gate Charge : Qg [nC]
Drain Current : ID [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
10
10/13
2012.10 - Rev.B
Data Sheet
R5021ANJ
lElectrical characteristic curves
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
10000
VGS= 0V
Pulsed
Reverse Recovery Time : trr [ns]
Inverse Diode Forward Current : IS [A]
100
10
1
Ta= 125ºC
Ta= 75ºC
Ta= 25ºC
Ta= -25ºC
0.1
0.01
1000
100
Ta=25ºC
di / dt = 100A / ms
VGS = 0V
Pulsed
10
0
0.5
1
1.5
0
10
100
Inverse Diode Forward Current : IS [A]
Source - Drain Voltage : VSD [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
1
11/13
2012.10 - Rev.B
Data Sheet
R5021ANJ
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit
Fig.4-2 dv/dt Waveform
Fig.5-1 di/dt Measurement Circuit
Fig.5-2 di/dt Waveform
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© 2012 ROHM Co., Ltd. All rights reserved.
12/13
2012.10 - Rev.B
Data Sheet
R5021ANJ
lDimensions (Unit : mm)
D
A2
A
B
L2
c1
E
L3
LPTS
H
A1
L4
Lp
b2
e
b
L1
L
b3
x
c
A3
B A
l3
l1
e
b6
b5
l2
Patterm of terminal position areas
DIM
A1
A2
A3
b
b2
b3
c
c1
D
E
e
HE
L
L1
L2
L3
L4
Lp
x
DIM
b5
b6
l1
l2
l3
MILIMETERS
MIN
MAX
0.00
0.30
4.30
4.70
0.25
0.68
0.98
8.90
1.14
1.44
0.30
0.60
1.10
1.50
9.80
10.40
8.80
9.20
2.54
12.80
13.40
2.70
3.30
0.90
1.50
1.10
7.25
1.00
0.90
1.50
0.25
MILIMETERS
MIN
MAX
1.23
10.40
2.10
7.55
13.40
INCHES
MIN
0
0.169
MAX
0.012
0.185
0.01
0.027
0.039
0.35
0.045
0.012
0.043
0.386
0.346
0.057
0.024
0.059
0.409
0.362
0.10
0.504
0.106
0.035
0.528
0.13
0.059
0.043
0.285
0.039
0.035
-
0.059
0.01
INCHES
MIN
-
MAX
0.049
0.409
0.083
0.297
0.528
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
13/13
2012.10 - Rev.B
Notice
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
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shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuelcontroller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
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Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
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