R5021ANJTL

R5021ANJ Nch 500V 21A Power MOSFET Datasheet lOutline VDSS 500V RDS(on) (Max.) 0.22W ID 21A PD 100W (2) LPTS (SC-83) TO-263(D2PAK) (1) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging lApplication Switching Power Supply Taping Reel size (mm) 330 Tape width (mm) 24 Type Basic ordering unit (pcs) Taping code 1,000 TL Marking R5021ANJ lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit VDSS 500 V Tc = 25°C ID *1 21 A Tc = 100°C ID *1 10.2 A 84 A Drain - Source voltage Continuous drain current Pulsed drain current ID,pulse *2 Gate - Source voltage VGSS 30 V Avalanche energy, single pulse EAS *3 29.6 mJ Avalanche energy, repetitive EAR *4 6.7 mJ Avalanche current IAR *3 10.5 A Power dissipation (Tc = 25°C) PD 100 W Junction temperature Tj 150 °C Tstg -55 to +150 °C dv/dt *5 15 V/ns Range of storage temperature Reverse diode dv/dt www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/13 2012.10 - Rev.B Data Sheet R5021ANJ lAbsolute maximum ratings Parameter Symbol Conditions Values Unit 50 V/ns VDS = 400V, ID = 21A Drain - Source voltage slope dv/dt Tj = 125°C lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - - 1.25 °C/W Thermal resistance, junction - ambient RthJA - - 80 °C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 °C lElectrical characteristics(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 500 - - V Drain - Source avalanche breakdown voltage V(BR)DS VGS = 0V, ID = 21A - 580 - V Tj = 25C - 0.1 100 mA Tj = 125°C - - 1000 IGSS VGS = 30V, VDS = 0V - - 100 nA VGS (th) VDS = 10V, ID = 1mA 2.5 - 4.5 V - 0.17 0.22 W Tj = 125°C - 0.37 - f = 1MHz, open drain - 14.0 - VDS = 500V, VGS = 0V Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage IDSS VGS = 10V, ID = 10.5A Static drain - source on - state resistance Gate input resistance www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. RDS(on) *6 Tj = 25°C RG 2/13 W 2012.10 - Rev.B Data Sheet R5021ANJ lElectrical characteristics(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Transconductance gfs *6 VDS = 10V, ID = 10.5A 7 14 - Input capacitance Ciss VGS = 0V - 2300 - Output capacitance Coss VDS = 25V - 1000 - Reverse transfer capacitance Crss f = 1MHz - 70 - Effective output capacitance, energy related Co(er) - 124 - Effective output capacitance, time related Turn - on delay time Rise time Turn - off delay time VGS = 0V VDS = 0V to 400V Co(tr) 126 - VDD ⋍ 250V, VGS = 10V - 47 - tr *6 ID = 10.5A - 70 - td(off) *6 RL = 23.8W - 200 400 RG = 10W - 70 140 tf *6 Fall time pF pF - td(on) *6 S ns lGate Charge characteristics(Ta = 25°C) Values Parameter Symbol Conditions Unit Min. Typ. Max. Total gate charge Qg *6 VDD ⋍ 250V - 64 - Gate - Source charge Qgs *6 ID = 21A - 11 - Gate - Drain charge Qgd *6 VGS = 10V - 27 - Gate plateau voltage V(plateau) VDD ⋍ 250V, ID = 21A - 6.2 - nC V *1 Limited only by maximum temperature allowed. *2 Pw  10ms, Duty cycle  1% *3 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C *4 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C, f = 10kHz *5 Reference measurement circuits Fig.5-1. *6 Pulsed www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/13 2012.10 - Rev.B Data Sheet R5021ANJ lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Values Parameter Symbol Inverse diode continuous, forward current Conditions Unit IS *1 Min. Typ. Max. - - 21 A - - 84 A - - 1.5 V - 521 - ns - 7.7 - mC - 29.5 - A - 580 - A/ms Tc = 25°C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *6 VGS = 0V, IS = 21A trr *6 Reverse recovery time Reverse recovery charge Qrr *6 Peak reverse recovery current Irrm *6 Peak rate of fall of reverse recovery current dirr/dt IS = 21A di/dt = 100A/us Tj = 25°C lTypical Transient Thermal Characteristics Symbol Value Rth1 0.0368 Rth2 0.154 Rth3 0.614 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Unit K/W 4/13 Symbol Value Unit Cth1 0.00311 Cth2 0.0141 Cth3 0.251 Ws/K 2012.10 - Rev.B Data Sheet R5021ANJ lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 Operation in this area is limited by RDS(ON) 100 10 Drain Current : ID [A] Power Dissipation : PD/PD max. [%] 120 80 60 40 20 PW = 100ms 1 PW = 1ms PW = 10ms 0.1 Ta = 25ºC Single Pulse 0.01 0 0 50 100 150 0.1 200 1 10 100 1000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [°C] Normalized Transient Thermal Resistance : r(t) Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 1000 100 10 Ta = 25ºC Single Pulse Rth(ch-a)(t) = ｒ(t)×Rth(ch-a) Rth(ch-a) = 80ºC/W 1 0.1 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 0.01 0.001 0.0001 0.0001 0.01 1 100 Pulse Width : PW [s] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 5/13 2012.10 - Rev.B Data Sheet R5021ANJ lElectrical characteristic curves Fig.5 Avalanche Power Losses Fig.4 Avalanche Current vs Inductive Load 9000 14 Avalanche Current : IAR [A] 12 Avalanche Power Losses : PAR [W] Ta = 25ºC VDD = 50V , RG = 25W VGF = 10V , VGR = 0V 10 8 6 4 2 0 0.01 0.1 1 10 100 Coil Inductance : L [mH] 8000 Ta = 25ºC 7000 6000 5000 4000 3000 2000 1000 0 1.0E+04 1.0E+05 1.0E+06 Frequency : f [Hz] Fig.6 Avalanche Energy Derating Curve vs Junction Temperature Avalanche Energy : EAS / EAS max. [%] 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 Junction Temperature : Tj [ºC] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 6/13 2012.10 - Rev.B Data Sheet R5021ANJ lElectrical characteristic curves Fig.8 Typical Output Characteristics(II) Fig.7 Typical Output Characteristics(I) 22 10 20 VGS= 10.0V 18 VGS= 6.0V 16 Drain Current : ID [A] Drain Current : ID [A] Ta=25ºC Pulsed 14 12 10 VGS= 5.0V 8 6 VGS= 4.5V 4 9 VGS= 10.0V 8 VGS= 6.5V 7 VGS= 6.0V 6 5 3 2 1 0 0 10 20 30 40 VGS= 5.0V 4 2 0 50 VGS= 4.5V 0 Drain - Source Voltage : VDS [V] 1 2 3 4 5 Drain - Source Voltage : VDS [V] Fig.10 Tj = 150°C Typical Output Characteristics(II) Fig.9 Tj = 150°C Typical Output Characteristics(I) 10 22 VGS= 10.0V 20 18 VGS= 6.0V VGS= 10.0V 9 VGS= 6.5V 8 VGS= 6.5V Drain Current : ID [A] 16 Drain Current : ID [A] Ta=25ºC Pulsed 14 12 10 VGS= 5.0V 8 6 VGS= 4.5V 4 Ta=150ºC Pulsed 2 VGS= 6.0V 7 VGS= 5.0V 6 5 4 VGS= 4.5V 3 2 Ta=150ºC Pulsed 1 0 0 0 10 20 30 40 50 0 2 3 4 5 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1 7/13 2012.10 - Rev.B Data Sheet R5021ANJ Fig.11 Breakdown Voltage vs. Junction Temperature Fig.12 Typical Transfer Characteristics 800 100 VDS= 10V Pulsed 750 10 Drain Current : ID [A] Drain - Source Breakdown Voltage : V(BR)DSS [V] lElectrical characteristic curves 700 650 600 1 0.1 0.01 550 500 Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 0.001 -50 0 50 100 150 0 Junction Temperature : Tj [°C] 4 5 6 7 100 VDS= 10V Pulsed VDS= 10V ID= 1mA Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] 3 Fig.14 Transconductance vs. Drain Current 6 4 3 2 1 0 -50 2 Gate - Source Voltage : VGS [V] Fig.13 Gate Threshold Voltage vs. Junction Temperature 5 1 0 50 100 1 Ta= -25ºC Ta= 25ºC Ta= 75ºC Ta= 125ºC 0.1 0.01 0.01 150 Junction Temperature : Tj [°C] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 10 0.1 1 10 100 Drain Current : ID [A] 8/13 2012.10 - Rev.B Data Sheet R5021ANJ lElectrical characteristic curves 0.5 Ta=25ºC Pulsed 0.4 0.3 ID=21A 0.2 ID=10.5A 0.1 0.0 0 2 4 6 8 Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [W] Static Drain - Source On-State Resistance : RDS(on) [W] Fig.15 Static Drain - Source On - State Resistance vs. Gate Source Voltage 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] 0.7 0.6 VGS= 10V Pulsed 0.5 0.4 ID= 21.0A 0.3 0.2 ID= 10.5A 0.1 0 -50 0 50 100 150 Junction Temperature : Tj [ºC] Static Drain - Source On-State Resistance : RDS(on) [W] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current 10 VGS = 10V Pulsed 1 0.1 Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.01 0.001 0.1 1 10 100 Drain Current : ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 9/13 2012.10 - Rev.B Data Sheet R5021ANJ lElectrical characteristic curves Fig.18 Typical Capacitance vs. Drain - Source Voltage Fig.19 Coss Stored Energy 100000 14 Coss Stored Energy : EOSS [uJ] Ta = 25ºC Capacitance : C [pF] 10000 Ciss 1000 Coss 100 10 Ta= 25ºC f= 1MHz VGS= 0V Crss 12 10 8 6 4 2 0 1 0.01 0.1 1 10 100 0 1000 400 Drain - Source Voltage : VDS [V] Fig.20 Switching Characteristics Fig.21 Dynamic Input Characteristics 10000 15 tf 1000 td(on) 100 Ta = 25ºC VDD≒250V VGS = 10V RGS= 10W Pulsed 10 tr Ta= 25ºC VGS= 250V ID= 21A RG= 10W Pulsed td(off) Capacitance : C [pF] Switching Time : t [ns] Drain - Source Voltage : VDS [V] 200 10 5 0 1 0.01 0.1 1 10 0 100 20 30 40 50 60 70 80 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 10 10/13 2012.10 - Rev.B Data Sheet R5021ANJ lElectrical characteristic curves Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 10000 VGS= 0V Pulsed Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] 100 10 1 Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 0.1 0.01 1000 100 Ta=25ºC di / dt = 100A / ms VGS = 0V Pulsed 10 0 0.5 1 1.5 0 10 100 Inverse Diode Forward Current : IS [A] Source - Drain Voltage : VSD [V] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1 11/13 2012.10 - Rev.B Data Sheet R5021ANJ lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 12/13 2012.10 - Rev.B Data Sheet R5021ANJ lDimensions (Unit : mm) D A2 A B L2 c1 E L3 LPTS H A1 L4 Lp b2 e b L1 L b3 x c A3 B A l3 l1 e b6 b5 l2 Patterm of terminal position areas DIM A1 A2 A3 b b2 b3 c c1 D E e HE L L1 L2 L3 L4 Lp x DIM b5 b6 l1 l2 l3 MILIMETERS MIN MAX 0.00 0.30 4.30 4.70 0.25 0.68 0.98 8.90 1.14 1.44 0.30 0.60 1.10 1.50 9.80 10.40 8.80 9.20 2.54 12.80 13.40 2.70 3.30 0.90 1.50 1.10 7.25 1.00 0.90 1.50 0.25 MILIMETERS MIN MAX 1.23 10.40 2.10 7.55 13.40 INCHES MIN 0 0.169 MAX 0.012 0.185 0.01 0.027 0.039 0.35 0.045 0.012 0.043 0.386 0.346 0.057 0.024 0.059 0.409 0.362 0.10 0.504 0.106 0.035 0.528 0.13 0.059 0.043 0.285 0.039 0.035 - 0.059 0.01 INCHES MIN - MAX 0.049 0.409 0.083 0.297 0.528 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 13/13 2012.10 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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