R5207AND

Data Sheet 10V Drive Nch MOSFET R5207AND  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. (1) Gate (2) Drain (3) Source 0.9 2.3 (1) (2) (3) 2.3 0.8Min. 0.65 0.5 1.0  Application Switching  Packaging specifications Type R5207AND Package Code Basic ordering unit (pieces) Taping TL 2500   Inner circuit ∗1 (1) Gate (2) Drain (3) Source (1) (2) (3)  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25C 1 BODY DIODE Limits 525 30 7 28 7 28 3.5 3.2 40 150 55 to 150 Unit V V A A A A A mJ W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID *3 IDP *1 IS *3 ISP IAS PD Tch Tstg *1 *2 EAS *2 *4 *3 Limited only by maximum temperature allowed. *4 TC=25C  Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) Limits 3.13 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.10 - Rev.A 2.5 0.75 0.9 1.5 9.5 R5207AND  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 525 2.5 2.5 Typ. 0.78 500 300 23 20 22 50 25 13 3.5 5.5 Max. 100 100 4.5 1.0 Unit nA V A V  S pF pF pF ns ns ns ns nC nC nC Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=525V, VGS=0V VDS=10V, ID=1mA ID=3.5A, VGS=10V VDS=10V, ID=3.5A VDS=25V VGS=0V f=1MHz VDD 250V, ID=3.5A VGS=10V RL=71.4 RG=10 VDD 250V ID=7A VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Conditions Unit V IS=7A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A R5207AND Electrical characteristic curves 　 Data Sheet Fig.1 Typical Output Characteristics ( Ⅰ) 1.0 0.9 0.8 Drain Current : ID [A] 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Drain-Source Voltage : VDS [V] VGS=4.5V 1 0 0 Ta=25℃ VGS=10.0V pulsed VGS=8.0V Drain Current : ID [A] VGS=7.0V VGS=6.5V VGS=6.0V VGS=5.0V 7 Fig.2 Typical Output Characteristics (Ⅱ) 100 DRAIN CURRENT : ID (A) VGS=10.0V VGS=8.0V VGS=7.0V VGS=6.5V Ta=25℃ pulsed VGS=6.0V Fig.3 Typical Transfer Characteristics 6 5 4 3 2 VDS= 10V Pulsed 10 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 1 0.1 VGS=5.0V VGS=4.5V 0.01 0.001 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 Drain-Source Voltage : VDS [V] GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Gate Threshold Voltage vs. Channel Temperature GATE THRESHOLD VOLTAGE: VGS(th) (V) 6 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 5 4 3 2 1 0 -50 VDS= 10V ID= 1mA 10 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 3 VGS= 10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 2.5 2 1.5 Fig.6 Static Drain-Source On-State Resistance vs. Gate Source Voltage Ta=25℃ pulsed 1 ID= 7.0A 1 ID= 3.5A 0.5 0 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.1 1 10 100 0.1 0 50 100 150 CHANNEL TEMPERATURE: Tch (℃) DRAIN CURRENT : ID (A) 0 5 10 15 GATE-SOURCE VOLTAGE : VGS (V) FORWARD TRANSFER ADMITTANCE : |Yfs| (S) Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature 3 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 2.5 2 1.5 1 0.5 0 -50 0 50 100 150 CHANNEL TEMPERATURE: Tch (℃) ID= 7A VGS= 10V Pulsed Fig.8 Forward Transfer Admittance vs. Drain Current 100 VDS= 10V Pulsed SOURCE CURRENT : IS (A) 10 10 100 VGS= 0V Pulsed Fig.9 Source Current vs. Sourse-Drain Voltage 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ ID= 3.5A 0.1 0.1 0.01 0.01 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.10 - Rev.A R5207AND 　 Data Sheet Fig.10 Typical Capacitance vs. Drain-Source Voltage 10000 GATE-SOURCE VOLTAGE : VGS (V) 10 Fig.11 Dynamic Input Characteristics 10000 REVERSE RECOVERY TIME: trr (ns) Ta= 25℃ VDD= 250V ID= 7A RG= 10Ω Pulsed Fig.12 Reverse Recovery Time vs.Source Current CAPACITANCE : C (pF) 8 1000 Ciss 1000 6 100 Coss 10 Ta= 25℃ f= 1MHz VGS= 0V 0.01 0.1 1 4 100 Crss 2 Ta= 25℃ di / dt= 100A / μs VGS= 0V Pulsed 0 1 SOURCE CURRENT : IS (A) 10 1 10 100 1000 DRAIN-SOURCE VOLTAGE : VDS (V) 0 0 5 10 15 TOTAL GATE CHARGE : Qg (nC) 10 Fig.13 Switching Characteristics 10000 Ta= 25℃ VDD= 250V VGS= 10V RG= 10Ω Pulsed SWITCHING TIME : t (ns) 1000 tf 100 td(off) 10 tr 1 0.01 0.1 1 10 100 DRAIN CURRENT : ID (A) td(on) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.10 - Rev.A R5207AND  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS D.U.T. RG IAS VDD EAS = 1 2 L IAS 2 VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A