R6004CND

Data Sheet 10V Drive Nch MOSFET R6004CND  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) CPT3 (SC-63) 6.5 5.1 2.3 0.5 1.5 5.5 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy. (1) Gate (2) Drain (3) Source 0.9 2.3 (1) (2) (3) 2.3 0.8Min. 0.65 0.5 1.0  Application Switching  Packaging specifications Type R6004CND Package Code Basic ordering unit (pieces) Taping TL 2500   Inner circuit ∗1 ∗2  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25C (1) Gate (2) Drain (3) Source (1) (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE Limits 600 25 4 16 4 16 2 1.1 40 150 55 to 150 Unit V V A A A A A mJ W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID *3 IDP IS ISP IAS EAS PD Tch Tstg *1 *1 *2 *2 *4 *3 Limited only by maximum temperature allowed. *4 TC=25C  Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) Limits 3.13 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.10 - Rev.A 2.5 0.75 0.9 1.5 9.5 R6004CND  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 600 2.5 1.2 Typ. 1.4 280 222 15 23 28 44 39 11 3 5 Max. 10 100 4.5 1.8 Unit A V A V  S pF pF pF ns ns ns ns nC nC nC Conditions VGS=25V, VDS=0V ID=1mA, VGS=0V VDS=600V, VGS=0V VDS=10V, ID=1mA ID=2A, VGS=10V VDS=10V, ID=2A VDS=25V VGS=0V f=1MHz VDD 300V, ID=2A VGS=10V RL=150 RG=10 VDD 300V ID=4A VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Unit V Conditions IS=4A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A R6004CND Electrical characteristic curves 　 Data Sheet Fig.1 Typical Output Characteristics ( Ⅰ) 0.5 VGS=10.0V VGS=8.0V VGS=7.0V VGS=6.5V VGS=6.0V Ta=25℃ pulsed 4 Fig.2 Typical Output Characteristics (Ⅱ) 100 VGS=10.0V VGS=8.0V VGS=7.0V VGS=6.5V Ta=25℃ pulsed VGS=6.0V DRAIN CURRENT : ID (A) 10 Fig.3 Typical Transfer Characteristics VDS= 10V Pulsed 0.4 Drain Current : ID [A] VGS=5.0V Drain Current : ID [A] 3 0.3 1 2 0.2 VGS=4.5V 0.1 0.1 1 VGS=5.0V VGS=4.5V 0.01 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] 0 0 1 2 3 4 5 6 7 8 9 10 Drain-Source Voltage : VDS [V] 0.001 0 2 4 6 8 10 GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Gate Threshold Voltage vs. Channel Temperature GATE THRESHOLD VOLTAGE: VGS(th) (V) 6 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) 5 4 3 2 1 0 -50 VDS= 10V ID= 1mA 100 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 4 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VGS= 10V Pulsed 10 3.5 3 2.5 2 1.5 1 0.5 0 0 Fig.6 Static Drain-Source On-State Resistance vs. Gate Source Ta=25℃ pulsed 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ ID= 4.0A 0.1 ID= 2.0A 0.01 0.1 1 DRAIN CURRENT : ID (A) 10 0 50 100 150 5 10 15 CHANNEL TEMPERATURE: Tch (℃) GATE-SOURCE VOLTAGE : VGS (V) Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature 5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) FORWARD TRANSFER ADMITTANCE : |Yfs| (S) VGS= 10V Pulsed 4 100 Fig.8 Forward Transfer Admittance vs. Drain Current 10 VDS= 10V Pulsed 10 VGS= 0V Pulsed SOURCE CURRENT : IS (A) Fig.9 Source Current vs. Sourse-Drain Voltage 1 3 ID= 4.0A 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 2 ID= 2.0A 0.1 0.1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 1 0.01 0 -50 0 50 100 150 0.001 0.01 0.01 0.1 1 10 0.0 0.5 1.0 1.5 DRAIN CURRENT : ID (A) SOURCE-DRAIN VOLTAGE : VSD (V) CHANNEL TEMPERATURE: Tch (℃) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.10 - Rev.A R6004CND 　 Data Sheet Fig.10 Typical Capacitance vs. Drain-Source Voltage 10000 GATE-SOURCE VOLTAGE : VGS (V) 15 Fig.11 Dynamic Input Characteristics 10000 REVERSE RECOVERY TIME: trr (ns) Ta= 25℃ VDD= 300V ID= 4A RG= 10Ω Pulsed Fig.12 Reverse Recovery Time vs.Source Current CAPACITANCE : C (pF) 1000 Ciss 100 Coss 10 Ta= 25℃ f= 1MHz VGS= 0V 0.01 0.1 1 10 10 1000 5 100 Crss 100 1000 Ta= 25℃ di / dt= 100A / μs VGS= 0V Pulsed 0 1 SOURCE CURRENT : IS (A) 10 1 DRAIN-SOURCE VOLTAGE : VDS (V) 0 0 5 10 15 TOTAL GATE CHARGE : Qg (nC) 10 Fig.13 Switching Characteristics 10000 tf 1000 Ta= 25℃ VDD= 300V VGS= 10V RG= 10Ω Pulsed SWITCHING TIME : t (ns) 100 td(off) 10 tr 1 0.01 0.1 1 10 DRAIN CURRENT : ID (A) td(on) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.10 - Rev.A R6004CND  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS D.U.T. RG IAS VDD EAS = 1 2 L IAS 2 VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A