R6006ANX
Nch 600V 6A Power MOSFET
lOutline
Datasheet
VDSS RDS(on) (Max.) ID PD
lFeatures 1) Low on-resistance. 2) Fast switching speed.
600V 1.2W 6A 40W
TO-220FM
(1)(2)(3)
lInner circuit
3) Gate-source voltage (VGSS) guaranteed to be 30V.
(1) Gate (2) Drain (3) Source *1 Body Diode
4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packing Reel size (mm) lApplication Switching Power Supply Tape width (mm) Type
Bulk 500 R6006ANX
Basic ordering unit (pcs) Taping code Marking
lAbsolute maximum ratings (Ta = 25C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25C) Junction temperature Range of storage temperature Reverse diode dv/dt Tc = 25C Tc = 100C Symbol VDSS ID *1 ID *1 ID,pulse VGSS EAS *3 EAR *4 IAR *3 PD Tj Tstg dv/dt *5
*2
Value 600 6 2.9 24 30 2.4 1.9 3 40 150 -55 to +150 15
Unit V A A A V mJ mJ A W C C V/ns
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1/13
2012.01 - Rev.B
R6006ANX
lAbsolute maximum ratings Parameter Drain - Source voltage slope Symbol dv/dt Conditions VDS = 480V, ID = 6A Tj = 125C
Data Sheet
Values 50
Unit V/ns
lThermal resistance Values Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s Symbol Min. RthJC RthJA Tsold Typ. Max. 3.125 70 265 C/W C/W C Unit
lElectrical characteristics (Ta = 25C) Values Parameter Symbol Conditions Min. Drain - Source breakdown voltage Drain - Source avalanche breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 600 Typ. Max. V Unit
V(BR)DS
VGS = 0V, ID = 6A VDS = 600V, VGS = 0V
-
700
-
V
Zero gate voltage drain current
IDSS
Tj = 25C Tj = 125°C
2.5
0.1 -
100 1000 100 4.5
mA
Gate - Source leakage current Gate threshold voltage
IGSS VGS (th)
VGS = 30V, VDS = 0V VDS = 10V, ID = 1mA VGS = 10V, ID = 3A
nA V
Static drain - source on - state resistance
RDS(on) *6 Tj = 25C Tj = 125°C
-
0.9 1.9 7.6
1.2 -
W
Gate input resistance
RG
f = 1MHz, open drain
W
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2/13
2012.01 - Rev.B
R6006ANX
lElectrical characteristics (Ta = 25C) Values Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related Effective output capacitance, time related Turn - on delay time Rise time Turn - off delay time Fall time Symbol gfs *6 Ciss Coss Crss Co(er) VGS = 0V VDS = 0V to 480V Co(tr) td(on) *6 tr *6 td(off) *6 tf *6 VDD ⋍ 300V, VGS = 10V ID = 3A RL = 100W RG = 10W 25 22 18 50 35 Conditions Min. VDS = 10V, ID = 3.0A VGS = 0V VDS = 25V f = 1MHz 1.7 Typ. 3.5 520 380 25 25
Data Sheet
Unit Max. pF pF S
ns 100 70
lGate Charge characteristics (Ta = 25C) Values Parameter Total gate charge Gate - Source charge Gate - Drain charge Gate plateau voltage Symbol Qg *6 Qgs *6 Qgd *6 V(plateau) Conditions Min. VDD ⋍ 300V ID = 6A VGS = 10V VDD ⋍ 300V, ID = 6A Typ. 15 4 6 6.0 Max. V nC Unit
*1 Limited only by maximum temperature allowed. *2 PW 10ms, Duty cycle 1% *3 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25C *4 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25 C, f = 10kHz *5 Reference measurement circuits Fig.5-1. *6 Pulsed
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3/13
2012.01 - Rev.B
R6006ANX
lBody diode electrical characteristics (Source-Drain) (Ta = 25C) Values Parameter Symbol Conditions Min. Inverse diode continuous, forward current Inverse diode direct current, pulsed Forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current I S *1 Tc = 25C ISM *2 VSD *6 trr *6 Qrr *6 Irrm *6 dirr/dt Tj = 25C IS = 6A di/dt = 100A/ms VGS = 0V, IS = 6A 302 2.0 13 300 Typ. -
Data Sheet
Unit Max. 6 A
24 1.5 -
A V ns mC A A/ms
lTypical Transient Thermal Characteristics Symbol Rth1 Rth2 Rth3 Value 0.342 1.15 2.19 K/W Unit Symbol Cth1 Cth2 Cth3 Value 0.00138 0.0146 0.452 Ws/K Unit
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4/13
2012.01 - Rev.B
R6006ANX
lElectrical characteristic curves
Data Sheet
Fig.1 Power Dissipation Derating Curve
120
Fig.2 Maximum Safe Operating Area
100
Power Dissipation : PD/PD max. [%]
100 10 80 60 40 20 0 0 50 100 150 200 0.01 0.1 1 10 100 1000
Drain Current : ID [A]
Operation in this area is limited by RDS(ON)
1
PW = 100us PW = 1ms
0.1 Ta = 25ºC Single Pulse
PW = 10ms
Junction Temperature : Tj [°C]
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r(t)
1000 100 10 1 0.1 0.01 0.001 0.0001 0.0001 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 0.01 1 100 Ta = 25ºC Single Pulse Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 70ºC/W
Pulse Width : PW [s]
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5/13
2012.01 - Rev.B
R6006ANX
lElectrical characteristic curves
Data Sheet
Fig.4 Avalanche Current vs Inductive Load
4
Fig.5 Avalanche Power Losses
3000
Avalanche Power Losses : PAR [W]
Ta = 25ºC VDD=50V,RG=25Ω VGF=10V,VGR=0V
Ta = 25ºC 2500 2000 1500 1000 500 0 1.0E+04
Avalanche Current : IAR [A]
3
2
1
0 0.01
0.1
1
10
100
1.0E+05
1.0E+06
Coil Inductance : L [mH]
Frequency : f [Hz]
Fig.6 Avalanche Energy Derating Curve vs Junction Temperature
120
Avalanche Energy : EAS / EAS max. [%]
100 80 60 40 20 0 0 25 50 75 100 125 150 175
Junction Temperature : Tj [ºC]
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6/13
2012.01 - Rev.B
R6006ANX
lElectrical characteristic curves
Data Sheet
Fig.7 Typical Output Characteristics(I)
6 10.0V 5 4 3 2 5.0V 1 VGS= 4.5V 0 0 5 10 15 20 8.0V 7.0V 6.5V Ta = 25ºC Pulsed 5.5V 6.0V
Fig.8 Typical Output Characteristics(II)
5 Ta = 25ºC Pulsed 6.5V 3 6.0V 5.5V 2 5.0V 1 VGS= 4.5V 0 0 1 2 3 4 5 10.0V 8.0V 7.0V
4
Drain Current : ID [A]
Drain Current : ID [A]
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.9 Tj = 150°C Typical Output Characteristics(I)
6 Ta = 150ºC Pulsed 5 4 5.5V 3 2 VGS = 4.5V 1 0 0 5 10 15 20 3 10V 8.0V 7.0V 6.5V
Fig.10 Tj = 150°C Typical Output Characteristics(II)
Ta = 150ºC Pulsed 10V
6.0V
Drain Current : ID [A]
Drain Current : ID [A]
2
6.5V 5.5V
1
VGS= 4.5V
0 0 1 2 3 4 5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
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7/13
2012.01 - Rev.B
R6006ANX
lElectrical characteristic curves
Data Sheet
Drain - Source Breakdown Voltage : V(BR)DSS [V]
Fig.11 Breakdown Voltage vs. Junction Temperature
900 850
Fig.12 Typical Transfer Characteristics
100 VDS = 10V Pulsed 10
800 750 700 650 600 550 500 -50 0 50 100 150 0.001 0 2 4 6 8
Drain Current : ID [A]
1 Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC
0.1
0.01
Junction Temperature : Tj [°C]
Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage vs. Junction Temperature
6 VDS = 10V ID = 1mA
Fig.14 Transconductance vs. Drain Current
100 VDS = 10V Pulsed
Gate Threshold Voltage : VGS(th) [V]
4 3 2 1 0 -50
Transconductance : gfs [S]
5
10
1
0.1
0.01
Ta = -25ºC Ta = 25ºC Ta = 75ºC Ta = 125ºC
0
50
100
150
0.001 0.001
0.01
0.1
1
10
Junction Temperature : Tj [°C]
Drain Current : ID [A]
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8/13
2012.01 - Rev.B
R6006ANX
lElectrical characteristic curves
Data Sheet
Fig.15 Static Drain - Source On - State Resistance vs. Gate Source Voltage
3
Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature
3
Static Drain - Source On-State Resistance : RDS(on) [Ω]
Static Drain - Source On-State Resistance : RDS(on) [Ω]
2.5 2 1.5 1 0.5 0 0 5 10 ID = 3.0A
Ta = 25ºC Pulsed
2.5 2
VGS = 10V Pulsed
ID= 6.0A
1.5 1
ID = 6.0A
ID= 3.0A
0.5 0 -50
15
0
50
100
150
Gate - Source Voltage : VGS [V]
Junction Temperature : Tj [ºC]
Fig.17 Static Drain - Source On - State Resistance vs. Drain Current
10
Static Drain - Source On-State Resistance : RDS(on) [Ω]
VGS = 10V Pulsed
1
Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0 0.001 0.01 0.1 1 10 100
Drain Current : ID [A]
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9/13
2012.01 - Rev.B
R6006ANX
lElectrical characteristic curves
Data Sheet
Fig.18 Typical Capacitance vs. Drain - Source Voltage
10000
Fig.19 Coss Stored Energy
4.0 Ta = 25ºC
1000
Ciss
100 Crss
Coss
Coss Stored Energy : EOSS [uJ]
1000
Capacitance : C [pF]
2.0
10 Ta = 25ºC f = 1MHz VGS = 0V 1 0.1 1 10 100
0.0 0 200 400 600
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.20 Switching Characteristics
10000 Ta = 25ºC VDD ⋍ 300V VGS = 10V RG = 10Ω Pulsed
Fig.21 Dynamic Input Characteristics
Gate - Source Voltage : VGS [V]
1000
tf
10
Switching Time : t [ns]
Ta = 25ºC VDD ⋍ 300V ID = 6 A RG = 10Ω Pulsed
100
td(off)
5
10 tr
td(on)
1 0.01 0.1 1 10 100
0 0 5 10 15 20
Drain Current : ID [A]
Total Gate Charge : Qg [nC]
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10/13
2012.01 - Rev.B
R6006ANX
lElectrical characteristic curves
Data Sheet
Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage
100
Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current
1000
Inverse Diode Forward Current : IS [A]
10 Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC
1
Reverse Recovery Time : trr [ns]
VGS = 0V Pulsed
100
0.1
Ta = 25ºC di / dt = 100A / μs VGS = 0V Pulsed 10 0.1 1 10
0.01 0 0.5 1 1.5
Source - Drain Voltage : VSD [V]
Inverse Diode Forward Current : IS [A]
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11/13
2012.01 - Rev.B
R6006ANX
lMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Data Sheet
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit
Fig.4-2 dv/dt Waveform
Fig.5-1 di/dt Measurement Circuit
Fig.5-2 di/dt Waveform
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12/13
2012.01 - Rev.B
R6006ANX
lDimensions (Unit : mm)
D E E1
φp
F A4
Data Sheet
TO-220FM
A
A2
b1
A1
A
Q
L
e b x A
c
DIM A A1 A2 A4 b b1 c D E e E1 F L p Q x
MILIMETERS MIN MAX 16.60 17.60 1.80 2.20 14.80 15.40 6.80 7.20 0.70 0.85 1.10 1.50 0.70 0.85 9.90 10.30 4.40 4.80 2.54 2.70 3.00 2.80 3.20 11.50 12.50 3.00 3.40 2.10 3.10 0.381
INCHES MIN 0.654 0.071 0.583 0.268 0.028 0.043 0.028 0.39 0.173 0.10 0.106 0.11 0.453 0.118 0.083 0.118 0.126 0.492 0.134 0.122 0.015 MAX 0.693 0.087 0.606 0.283 0.033 0.059 0.033 0.406 0.189
Dimension in mm/inches
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13/13
2012.01 - Rev.B
Notice
Notes
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R1120A