R6008ANX

10V Drive Nch MOSFET R6008ANX Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Drive circuits can be simple. 6) Parallel use is easy. Applications Switching Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 15.0 12.0 8.0 2.5 1.3 1.2 14.0 0.8 (1)Base (2)Collector (3)Emitter 2.54 (1) (2) (3) 2.54 0.75 2.6 Packaging specifications Package Type Code Basic ordering unit (pieces) R6008ANX Bulk − 500 Inner circuit ∗1 Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum tempterature allowed (1) (2) (3) ∗1 Body Diode Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg ∗3 ∗1 ∗3 ∗1 ∗2 ∗2 Limits 600 ±30 ±8 ±32 8 32 4 4.3 50 150 −55 to +150 Unit V V A A A A A mJ W °C °C (1) Gate (2) Drain (3) Source Thermal resistance Parameter Channel to case Symbol Rth(ch-c) Limits 2.5 Unit °C/W www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 1/5 2009.05 - Rev.B R6008ANX Electrical characteristics (Ta=25°C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗ Pulsed Data Sheet Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) ∗ | Yfs | Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 600 − 2.5 − 2.5 − − − − − − − − − − Typ. − − − − 0.6 − 680 450 35 25 25 60 35 21 5 10 Max. ±100 − 100 4.5 0.8 − − − − − − − − − − − Unit nA V µA V Ω S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±30V, VDS=0V ID=1mA, VGS=0V VDS=600V, VGS=0V VDS=10V, ID=1mA ID=4A, VGS=10V ID=4A, VDS=10V VDS=25V VGS=0V f=1MHz ID=4A, VDD 300V VGS=10V RL=75Ω RG=10Ω VDD 300V ID=8A VGS=10V RL=37.5Ω / RG=10Ω Body diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage ∗ Pulsed Symbol VSD ∗ Min. − Typ. − Max. 1.5 Unit V Conditions IS= 8A, VGS=0V www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 2/5 2009.05 - Rev.B R6008ANX Data Sheet 100 15 PW =100us Ta= 25°C Pulsed 7.0V 8.0V 10 10.0V Ta= 25°C Pulsed 10.0V 8 6.5V DRAIN CURRENT : ID ( A) DRAIN CURRENT: ID ( A) 10 PW =1ms 10 6.0V 5.5V DRAIN CURRENT: ID ( A) 6 7.0V 6.5V 8.0V 1 Operation in this area is limited by R DS(ON) Ta = 25°C Single Pulse 1 10 DC operation 4 6.0V 5.0V 5.5V 5 5.0V V GS= 4.5V 0.1 2 V GS= 4.5V 0.01 0.1 0 100 1000 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE: VDS ( V) Fig.2 Typical Output Characteristics( Ⅰ) 0 0 1 2 3 4 5 DRAIN-SOURCE VOLTAGE: VDS ( V) Fig.3 Typical Output Characteristics( Ⅱ) DRAIN-SOURCE VOLTAGE : VDS ( V ) Fig.1 Maximum Safe Operating Aera 100 GATE THRESHOLD VOLTAGE: VGS(th) ( V) 5 4 3 2 1 0 -50 DRAIN CURRENT : ID ( A) 10 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) ( Ω) VDS= 10V Pulsed 6 VDS= 10V ID = 1mA 10 VGS= 10V Pulsed Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 1 0.1 0.01 0.0 1.5 3.0 4.5 6.0 0 50 100 150 0.1 0.001 0.01 0.1 1 10 100 GATE-SOURCE VOLTAGE : VGS ( V) Fig.4 Typical Transfer Characteristics CHANNEL TEMPERATURE: Tc h ( °C) Fig.5 Gate Threshold Voltage vs. Channel Temperature DRAIN CURRENT : ID ( A) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 2 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) ( Ω) FORWARD TRANSFER ADMITTANCE : |Yfs| (S) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) ( Ω) Ta=25°C Pulsed 2 VGS= 10V Pulsed 100 VDS= 10V Pulsed 1.5 1.5 ID = 8A 1 ID = 4A 0.5 10 1 1 ID =8A 0.1 0.5 ID =4A 0.01 Ta= -25°C Ta= 25°C Ta= 75°C Ta= 125°C 0 0 5 10 15 GATE-SOURCE VOLTAGE : VGS ( V) Fig.7 Static Drain-Source On-State Resistance vs. Gate Source Voltage 0 -50 0 50 100 150 0.001 0.001 0.01 0.1 1 10 100 CHANNEL TEMPERATURE: Tc h ( °C) Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature DRAIN CURRENT : ID ( A) Fig.9 Forward Transfer Admittance vs. Drain Current www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 3/5 2009.05 - Rev.B R6008ANX Data Sheet 100 REVERSE DRAIN CURRENT : IDR ( A) Cis s Ta= 75°C Ta= 25°C Ta= -25°C CAPACITANCE : C (pF) 10 Ta= 125°C 1000 1 100 Coss Crs s GATE-SOURCE VOLTAGE : VGS ( V) 1000 VGS= 0V Pulsed 10000 15 Ta= 25°C VDD = 300V ID = 8A R G= 10Ω 10 Pulsed 5 0.1 10 Ta= 25°C f= 1MHz VGS= 0V 0.1 1 10 100 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD ( V) Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 1 0 0 5 10 15 20 25 30 TOTAL GATE CHARGE : Qg ( nC) Fig.12 Dynamic Input Characteristics DRAIN-SOURCE VOLTAGE : VDS ( V) Fig.11 Typical Capacitance vs. Drain-Source Voltage 1000 REVERSE RECOVERY TIME: trr ( ns) 10000 tf SWITCHING TIME : t (ns) 1000 td(off) 100 Ta= 25°C VDD = 300V VGS= 10V RG= 10Ω Pulsed 100 10 Ta= 25°C di / dt= 100A / µs VGS= 0V Pulsed 0.1 1 10 100 10 tr 1 0.01 0.1 1 10 100 DRAIN CURRENT : ID ( A) Fig.14 Switching 　Characteristics td(on) REVERSE DRAIN CURRENT : IDR ( A) Fig.13 Reverse Recovery Time vs.Reverse Drain Current 10 NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) Ta = 25°C Single Pulse : 1Unit 1 Rth（ch-a）（t） = ｒ（t）×Rth（ch-a） Rth（ch-a） = 53.8 °C/W 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 4/5 2009.05 - Rev.B R6008ANX Switching characteristics measurement circuit Pulse width VGS ID RL D.U.T. RG VDD VDS Data Sheet VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching time measurement circuit Fig.1-2 Switching waveforms VG VGS ID RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate charge waveform VGS IAS L VDS VD(BR)DSS D.U.T. RG IAS VDD EAS = 1 2 L IAS 2 VD(BR)DSS VD(BR)DSS - VDD Fig.3-1 Avalanche Measurement circuit Fig.3-2 Avalanche waveform www.rohm.com c ○ 2009 ROHM Co., Ltd. All rights reserved. 5/5 2009.05 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). 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