R6008FNJ

Data Sheet 10V Drive Nch MOSFET R6008FNJ  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) LPTS 10.1 4.5 1.3 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage 　 VGSS garanteed to be ±30V . 5) Drive circuits can be simple. 6) Parallel use is easy. 3.0 1.0 Features 1) Fast reverse recovery time (trr) 13.1 9.0 1.24 0.78 (3) 5.08 (1) (2) 2.7 Application Switching  Inner circuit Packaging specifications Type R6008FNJ Package Code Basic ordering unit (pieces) Taping TL 1000  (1) Gate (2) Drain (3) Source (1) (2) 1.2 2.54 0.4 ∗1 (3) 1 BODY DIODE Absolute maximum ratings (Ta  25°C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Power dissipation (Tc=25℃) Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L≒ 500H, VDD=50V, Rg=25 , starting Tch=25 ℃ *3 Limited only by maximum temperature allowed. Limits 600 30 Unit V V A A A A A mJ W C C VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg *3 *1 *3 *1 *2 *2 8 32 8 32 4 4.3 50 150 55 to 150  Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) Limits 2.5 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.10 - Rev.A R6008FNJ  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) RDS (on) * l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 600 2.0 2.5 Typ. 0.73 5.0 580 450 25 20 25 60 30 20 5 10 Max. 100 100 4.0 0.95 Unit nA V A V  S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±30V, VDS=0V ID=1mA, V GS=0V VDS=600V, VGS=0V VDS=10V, ID=1mA ID=4A, VGS=10V ID=4A, VDS=10V VDS=25V VGS=0V f=1MHz ID=4A, VDD 300V VGS=10V RL=75 RG=10 ID=8A, VDD 300V VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Reverse Recovery Time *Pulsed Symbol VSD * trr * Min. - Typ. 67 Max. 1.5 - Unit V ns Conditions Is=8A, VGS=0V Is=8A, di/dt=100A/s www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A R6008FNJ Electrical characteristic curves 100 PW =100us DRAIN CURRENT : ID (A) 10 DRAIN CURRENT : ID [A] Operation in this area is limited by RDS(ON) 　 Data Sheet 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0.1 1 10 100 1000 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 DRAIN-SOURCE VOLTAGE : VDS [V] Fig.2 Typical Output Characteristics (Ⅰ) Ta=25℃ pulsed VGS=10.0V VGS=8.0V VGS=7.0V VGS=6.5V VGS=6.0V VGS=5.0V DRAIN CURRENT : ID [A] VGS=4.5V 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 DRAIN-SOURCE VOLTAGE : VDS [V] Fig.3 Typical Output Characteristics (Ⅱ) VGS=4.5V VGS=5.0V VGS=10.0V VGS=8.0V VGS=7.0V VGS=6.5V VGS=6.0V Ta=25℃ pulsed 1 PW =1ms Pw=10ms 0.1 T a = 25℃ Single Pulse 0.01 DRAIN-SOURCE VOLTAGE: VDS (V) Fig.1 Maximum Safe Operating Area GATE THRESHOLD VOLTAGE: VGS(th) (V) 100 VDS= 10V Pulsed DRAIN CURRENT :: IID ((A) DRAIN CURRENT D A) 10 Ta=125℃ T a= 75℃ T a= 25℃ Ta= -25℃ 6 5 4 3 2 1 0 -50 VDS= 10V ID= 1mA 10 Static Drain-Source On-State Resistance RDS(on) [Ω] Ta=125℃ T a= 75℃ T a= 25℃ Ta= -25℃ VGS=10V pulsed 1 1 0.1 0.01 0.001 0.0 1.5 3.0 4.5 6.0 GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Typical Transfer Characteristics 0.1 0.1 1 10 100 Drain Current : ID [A] Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 0 50 100 150 CHANNEL TEMPERATURE: Tch (℃) Fig.5 Gate Threshold Voltage vs. Channel Temperature 2 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) Ta=25℃ pulsed 1.5 3 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 2.5 2 1.5 1 0.5 0 -50 ID= 4.0A VGS= 10V Pulsed 100 VDS= 10V Pulsed 10 1 ID= 8.0A ID= 8.0A 1 Ta=125℃ T a= 75℃ T a= 25℃ Ta= -25℃ 0.5 ID= 4.0A 0.1 0 0 5 10 15 0 50 100 150 0.01 0.01 0.1 1 10 100 GATE-SOURCE VOLTAGE : VGS (V) Fig.7 Static Drain-Source On-State Resistance vs. Gate Source Voltage CHANNEL TEMPERATURE: Tch (℃) Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature DRAIN CURRENT : ID (A) Fig.9 Forward Transfer Admittance vs. Drain Current www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.10 - Rev.A R6008FNJ 　 Data Sheet 100 VGS= 0V Pulsed SOURCE CURRENT : IS (A) CAPACITANCE : C (pF) 10 10000 GATE-SOURCE VOLTAGE : VGS (V) 15 1000 Ciss Coss 10 1 Ta=125℃ T a= 75℃ T a= 25℃ Ta= -25℃ 100 Crss 10 5 0.1 Ta= 25℃ f= 1MHz VGS= 0V 0.01 0.1 1 10 100 1000 Ta= 25℃ VDD= 300V ID= 8.0A RG= 10Ω Pulsed 0 10 20 30 0.01 0 0.5 1 1.5 2 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.10 Source Current vs. Sourse-Drain Voltage 1 0 TOTAL GATE CHARGE : Qg (nC) Fig.12 Dynamic Input Characteristics DRAIN-SOURCE VOLTAGE : VDS (V) Fig.11 Typical Capacitance vs. Drain-Source Voltage 1000 REVERSE RECOVERY TIME: trr (ns) Ta= 25℃ di / dt= 100A / μs VGS= 0V Pulsed 10000 Ta= 25℃ VDD= 300V VGS= 10V RG= 10Ω Pulsed SWITCHING TIME : t (ns) 1000 tf 100 100 td(off) 10 td(on) tr 10 0.1 1 10 100 1 0.1 1 10 100 REVERSE DRAIN CURRENT : IS (A) Fig.13 Reverse Recovery Time vs. Source Current DRAIN CURRENT : ID (A) Fig.14 Switching Characteristics 10 NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) Ta= 25℃ Single Pulse Rth(ch-a) (t) = r(t)×Rth(ch-a) Rth(ch-a) = 49.7℃/W 1 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.10 - Rev.A R6008FNJ  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS D.U.T. RG IAS VDD EAS = 1 2 L IAS 2 VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A