R6008FNJ
Datasheet
Nch 600V 8A Power MOSFET
Outline
VDSS
600V
RDS(on) (Max.)
0.95
ID
8A
PD
119W
LPTS
(SC-83)
(2)
or
(1)
(3)
Features
Inner circuit
e
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(2)
1) Low on-resistance.
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
(1) Gate
(2) Drain
(3) Source
*1
(1)
4) Drive circuits can be simple.
*1 Body Diode
5) Parallel use is easy.
(3)
6) Pb-free lead plating ; RoHS compliant
Packaging specifications
Packaging
Application
Taping
Reel size (mm)
330
Tape width (mm)
24
Type
Basic ordering unit (pcs)
Switching Power Supply
Taping code
Marking
1,000
TL
R6008FNJ
Absolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
VDSS
600
V
Tc = 25°C
ID *1
8
A
Tc = 100°C
ID *1
3.9
A
ID,pulse *2
32
A
Gate - Source voltage
VGSS
30
V
Avalanche energy, single pulse
EAS *3
4.3
mJ
Avalanche energy, repetitive
EAR *4
3.4
mJ
Avalanche current
IAR *3
4
A
Power dissipation (Tc = 25°C)
PD
119
W
Junction temperature
Tj
150
°C
Tstg
55 to 150
°C
dv/dt *5
15
V/ns
R
Drain - Source voltage
ot
Continuous drain current
N
Pulsed drain current
Range of storage temperature
Reverse diode dv/dt
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© 2015 ROHM Co., Ltd. All rights reserved.
1/13
2016.02 - Rev.C
Data Sheet
R6008FNJ
Absolute maximum ratings
Symbol
Parameter
Conditions
Values
Unit
50
V/ns
VDS = 480V, ID = 8A
Drain - Source voltage slope
dv/dt
or
Tj = 125°C
Thermal resistance
Values
Symbol
e
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m
D
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Parameter
Min.
Typ.
Max.
Unit
Thermal resistance, junction - case
RthJC
-
-
1.05
°C/W
Thermal resistance, junction - ambient
RthJA
-
-
80
°C/W
Soldering temperature, wavesoldering for 10s
Tsold
-
-
265
°C
Electrical characteristics(Ta = 25°C)
Values
Parameter
Symbol
Conditions
Typ.
Max.
600
-
-
V
-
700
-
V
Tj = 25°C
-
1
100
Tj = 125°C
-
-
10
mA
IGSS
VGS = 30V, VDS = 0V
-
-
100
nA
VGS (th)
VDS = 10V, ID = 1mA
2.0
-
4.0
V
Tj = 25°C
-
0.73
0.95
Tj = 125°C
-
1.62
-
f = 1MHz, open drain
-
8.0
-
Drain - Source breakdown
voltage
V(BR)DSS
VGS = 0V, ID = 1mA
Drain - Source avalanche
breakdown voltage
V(BR)DS
VGS = 0V, ID = 8A
VDS = 600V, VGS = 0V
ot
R
Zero gate voltage
drain current
Gate - Source leakage current
IDSS
N
Gate threshold voltage
Static drain - source
on - state resistance
Gate input resistance
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© 2015 ROHM Co., Ltd. All rights reserved.
Unit
Min.
A
VGS = 10V, ID = 4A
RDS(on)
RG
*6
2/13
2016.02 - Rev.C
Data Sheet
R6008FNJ
Electrical characteristics(Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
2.5
5.0
-
gfs *6
VDS = 10V, ID = 4.0A,
Input capacitance
Ciss
VGS = 0V
-
580
-
Output capacitance
Coss
VDS = 25V
-
450
-
Reverse transfer capacitance
Crss
f = 1MHz
-
25
-
e
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Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn - on delay time
Rise time
-
31.5
Co(tr)
td(on) *6
*6
td(off)
tf
*6
pF
-
VGS = 0V
VDS = 0V to 480V
tr *6
Turn - off delay time
Fall time
Co(er)
S
or
Transconductance
-
31.8
-
VDD ⋍ 300V, VGS = 10V
-
20
-
ID = 4A
-
25
-
RL = 75
-
60
120
RG = 10
-
30
60
pF
ns
Gate Charge characteristics(Ta = 25°C)
Values
Parameter
Symbol
Qg *6
Gate - Source charge
Qgs
R
Total gate charge
*6
Qgd *6
Gate plateau voltage
V(plateau)
Min.
Typ.
Max.
VDD ⋍ 300V
-
20
-
ID = 8A
-
5
-
VGS = 10V
-
10
-
VDD ⋍ 300V, ID = 8A
-
5.7
-
Unit
nC
V
ot
Gate - Drain charge
Conditions
N
*1 Limited only by maximum temperature allowed.
*2 Pw 10s, Duty cycle 1%
*3 L ⋍ 500H, VDD = 50V, RG = 25, starting T j = 25°C
*4 L ⋍ 500H, VDD = 50V, RG = 25, starting T j = 25°C, f = 10kHz
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
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© 2015 ROHM Co., Ltd. All rights reserved.
3/13
2016.02 - Rev.C
Data Sheet
R6008FNJ
Body diode electrical characteristics (Source-Drain)(Ta = 25°C)
Values
Parameter
Symbol
Inverse diode continuous,
forward current
Conditions
Unit
IS *1
Min.
Typ.
Max.
-
-
8
A
Inverse diode direct current,
pulsed
*2
*6
-
32
-
e
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ISM
or
Tc = 25°C
Forward voltage
VSD
VGS = 0V, IS = 8A
trr *6
Reverse recovery time
*6
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm *6
Peak rate of fall of reverse
recovery current
dirr/dt
IS = 8A
di/dt = 100A/us
Tj = 25°C
A
-
-
1.5
V
-
67
-
ns
-
0.17
-
C
-
4.9
-
A
-
610
-
A/s
Typical Transient Thermal Characteristics
Symbol
Rth1
Rth2
Unit
0.118
0.472
K/W
0.583
Symbol
Value
Cth1
0.0014
Cth2
0.00402
Cth3
0.174
Unit
Ws/K
N
ot
R
Rth3
Value
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© 2015 ROHM Co., Ltd. All rights reserved.
4/13
2016.02 - Rev.C
Data Sheet
R6008FNJ
Electrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
Drain Current : ID [A]
10
80
60
40
20
Operation in this
area is limited
by RDS(ON)
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Power Dissipation : PD/PD max. [%]
100
or
100
120
PW = 100us
1
PW = 1ms
0.1
PW = 10ms
Ta = 25ºC
Single Pulse
0.01
0
0
50
100
150
0.1
200
1
10
100
1000
Drain - Source Voltage : VDS [V]
Junction Temperature : Tj [°C]
1000
100
R
10
Ta = 25ºC
Single Pulse
Rth(ch-a)(t) = ｒ(t)×Rth(ch-a)
Rth(ch-a) = 80ºC/W
1
0.1
ot
Normalized Transient Thermal Resistance : r(t)
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
0.01
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
N
0.001
0.0001
0.0001
0.01
1
100
Pulse Width : PW [s]
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© 2015 ROHM Co., Ltd. All rights reserved.
5/13
2016.02 - Rev.C
Data Sheet
R6008FNJ
Electrical characteristic curves
Fig.4 Avalanche Current vs Inductive Load
Fig.5 Avalanche Power Losses
6
5000
Avalanche Power Losses : PAR [W]
4500
4
3
2
1
0
0.01
Ta = 25ºC
4000
3500
3000
e
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Avalanche Current : IAR [A]
5
or
Ta = 25ºC
VDD = 50V , RG = 25
VGF = 10V , VGR = 0V
0.1
1
10
100
Coil Inductance : L [mH]
2500
2000
1500
1000
500
0
1.0E+04
1.0E+05
1.0E+06
Frequency : f [Hz]
Fig.6 Avalanche Energy Derating Curve
vs Junction Temperature
100
R
80
60
N
ot
Avalanche Energy : EAS / EAS max. [%]
120
40
20
0
0
25
50
75
100
125
150
175
Junction Temperature : Tj [ºC]
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© 2015 ROHM Co., Ltd. All rights reserved.
6/13
2016.02 - Rev.C
Data Sheet
R6008FNJ
Electrical characteristic curves
Fig.8 Typical Output Characteristics(II)
Fig.7 Typical Output Characteristics(I)
8.0
8
VGS=10.0V
4.0
3.0
2.0
Drain Current : ID [A]
VGS=6.0V
5.0
VGS=5.0V
VGS=4.5V
1.0
VGS=10.0V
6
VGS=7.0V
5
e
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Drain Current : ID [A]
7
VGS=7.0V
6.0
Ta=25℃
pulsed
or
7.0
Ta=25℃
pulsed
VGS=6.0V
4
VGS=5.0V
3
2
VGS=4.5V
1
0.0
0
0
10
20
30
40
50
0
3
4
5
Fig.10 Tj = 150°C Typical Output
Characteristics(II)
Fig.9 Tj = 150°C Typical Output
Characteristics(I)
4
8
VGS = 10V
7
VGS = 7.0V
6
Ta = 150ºC
Pulsed
VGS = 5.5V
VGS = 10V
R
5
4
3
2
Drain Current : ID [A]
VGS = 6.0V
VGS = 5.0V
ot
Drain Current : ID [A]
2
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
N
1
VGS = 4.5V
1
VGS = 7.0V
VGS = 6.0V
2
VGS = 5.0V
VGS = 4.5V
Ta = 150ºC
Pulsed
0
0
0
10
20
30
40
50
0
2
3
4
5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
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© 2015 ROHM Co., Ltd. All rights reserved.
1
7/13
2016.02 - Rev.C
Data Sheet
R6008FNJ
Electrical characteristic curves
Fig.12 Typical Transfer Characteristics
900
VDS = 10V
Pulsed
850
10
Drain Current : ID [A]
800
700
650
600
550
500
0.1
0.01
0.001
-50
0
50
100
150
0.0
1.5
Junction Temperature : Tj [°C]
3.0
4.5
6.0
Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage
vs. Junction Temperature
Fig.14 Transconductance vs. Drain Current
6
10
5
VDS = 10V
Pulsed
R
4
VDS = 10V
ID = 1mA
Transconductance : gfs [S]
N
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
1
e
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750
or
100
3
ot
Gate Threshold Voltage : VGS(th) [V]
Drain - Source Breakdown Voltage : V(BR)DSS [V]
Fig.11 Breakdown Voltage
vs. Junction Temperature
2
1
0
-50
0
50
100
Junction Temperature : Tj [°C]
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© 2015 ROHM Co., Ltd. All rights reserved.
1
0.1
0.01
0.01
150
Ta = 25ºC
Ta = 25ºC
Ta = 75ºC
Ta = 125ºC
0.1
1
10
100
Drain Current : ID [A]
8/13
2016.02 - Rev.C
Data Sheet
R6008FNJ
Electrical characteristic curves
Fig.15 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
Fig.16 Static Drain - Source On - State
Resistance vs. Junction Temperature
ID= 8.0A
1
ID= 4.0A
0.5
0
0
Static Drain - Source On-State Resistance
: RDS(on) []
1.5
2.5
VGS = 10V
Pulsed
2
e
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m
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f
Static Drain - Source On-State Resistance
: RDS(on) []
Ta = 25ºC
Pulsed
or
3
2
5
10
15
Gate - Source Voltage : VGS [V]
1.5
ID= 8.0A
1
ID= 4.0A
0.5
0
-50
0
50
100
150
Junction Temperature : Tj [ºC]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
R
VGS = 10V
Pulsed
1
N
ot
Static Drain - Source On-State Resistance
: RDS(on) []
10
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
0.1
0.1
1
10
Drain Current : ID [A]
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© 2015 ROHM Co., Ltd. All rights reserved.
9/13
2016.02 - Rev.C
Data Sheet
R6008FNJ
Electrical characteristic curves
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Fig.19 Coss Stored Energy
10000
6
Crss
10
Ta= 25℃
f= 1MHz
VGS= 0V
1
4
e
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m
D
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ns d
f
Coss
100
or
Ciss
1000
Capacitance : C [pF]
Coss Stored Energy : EOSS [uJ]
Ta = 25ºC
2
0
0.01
0.1
1
10
100
1000
0
Drain - Source Voltage : VDS [V]
600
Fig.21 Dynamic Input Characteristics
15
1000
Ta= 25℃
VDD= 300V
VGS= 10V
RG= 10
R
tf
Gate - Source Voltage : VGS [V]
10000
100
td(off)
ot
Switching Time : t [ns]
400
Drain - Source Voltage : VDS [V]
Fig.20 Switching Characteristics
N
200
10
td(on)
tr
1
10
5
Ta= 25℃
VDD= 300V
ID= 8.0A
Pulsed
0
0.1
1
10
0
100
20
30
Total Gate Charge : Qg [nC]
Drain Current : ID [A]
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© 2015 ROHM Co., Ltd. All rights reserved.
10
10/13
2016.02 - Rev.C
Data Sheet
R6008FNJ
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
100
1000
10
1
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = 25ºC
0.1
Ta= 25℃
di / dt= 100A / s
VGS= 0V
Pulsed
or
Reverse Recovery Time : trr [ns]
VGS= 0V
Pulsed
e
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Inverse Diode Forward Current : IS [A]
Electrical characteristic curves
100
10
0.01
0
0.5
1
1.5
0.1
2
10
100
Inverse Diode Forward Current : IS [A]
N
ot
R
Source - Drain Voltage : VSD [V]
1
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© 2015 ROHM Co., Ltd. All rights reserved.
11/13
2016.02 - Rev.C
Data Sheet
R6008FNJ
Measurement circuits
Fig.1-1 Switching Time Measurement Circuit
VGS
Fig.1-2 Switching Waveforms
Pulse width
ID
VDS
RL
D.U.T.
50%
10%
VDD
RG
90%
50%
10%
VGS
VDS
10%
90%
or
90%
td(on)
td(off)
tr
toff
e
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f
ton
tf
Fig.2-1 Gate Charge Measurement Circuit
VGS
Fig.2-2 Gate Charge Waveform
VG
ID
VDS
Qg
RL
VGS
D.U.T.
IG(Const.)
Qgs
VDD
Qgd
Charge
Fig.3-1 Avalanche Measurement Circuit
VGS
IAS
Fig.3-2 Avalanche Waveform
VDS
L
D.U.T.
V(BR)DSS
IAS
RG
VDD
VDD
EAS =
Fig.4-1 dv/dt Measurement Circuit
R
VGS
IAS
V(BR)DSS
V(BR)DSS - VDD
2
L IAS
Fig.4-2 dv/dt Waveform
VDS
L
D.U.T.
V(BR)DSS
RG
IAS
VDD
ot
N
1
2
VDD
Fig.5-1 di/dt Measurement Circuit
Fig.5-2 di/dt Waveform
IF
D.U.T.
IF
L
trr
0
VDD
RG
Irr 10%
DRIVER
MOSFET
Irr
drr / dt
Irr 90%
Irr 100%
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© 2015 ROHM Co., Ltd. All rights reserved.
12/13
2016.02 - Rev.C
Data Sheet
R6008FNJ
Dimensions (Unit : mm)
D
A2
A
B
L2
c1
E
L3
LPTS
H
or
A1
L4
e
N co
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m
D
es en
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ns d
f
Lp
b2
e
b
L1
L
b3
x
c
A3
B A
l3
l1
e
b6
b5
l2
Patterm of terminal position areas
N
ot
R
DIM
A1
A2
A3
b
b2
b3
c
c1
D
E
e
HE
L
L1
L2
L3
L4
Lp
x
DIM
b5
b6
l1
l2
l3
MILIMETERS
MIN
MAX
0.00
0.30
4.30
4.70
0.25
0.68
0.98
8.90
1.14
1.44
0.30
0.60
1.10
1.50
9.80
10.40
8.80
9.20
2.54
12.80
13.40
2.70
3.30
0.90
1.50
1.10
7.25
1.00
0.90
1.50
0.25
MILIMETERS
MIN
MAX
1.23
10.40
2.10
7.55
13.40
INCHES
MIN
0
0.169
MAX
0.012
0.185
0.01
0.027
0.039
0.35
0.045
0.012
0.043
0.386
0.346
0.057
0.024
0.059
0.409
0.362
0.10
0.504
0.106
0.035
0.528
0.13
0.059
0.043
0.285
0.039
0.035
-
0.059
0.01
INCHES
MIN
-
MAX
0.049
0.409
0.083
0.297
0.528
Dimension in mm/inches
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© 2015 ROHM Co., Ltd. All rights reserved.
13/13
2016.02 - Rev.C
Notice
Precaution on using ROHM Products
Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
, transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
or
1.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
ot
R
2.
N
e
N co
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m
D
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ns d
f
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.003
Precautions Regarding Application Examples and External Circuits
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
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1.
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This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
ot
1.
R
Precaution Regarding Intellectual Property Rights
ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
N
2.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PGA-E
© 2015 ROHM Co., Ltd. All rights reserved.
Rev.003
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