R6010ANX

Data Sheet 10V Drive Nch MOSFET R6010ANX  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 15.0 12.0 8.0 14.0 2.5 1.3 1.2 0.8 (1) Gate (2) Drain (3) Source 2.54 (1) (2) (3) 2.54 0.75 2.6  Application Switching  Packaging specifications Type R6010ANX Package Code Basic ordering unit (pieces) Bulk 500   Inner circuit ∗1  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , Starting, T ch=25C (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE Limits 600 30 10 40 10 40 5 6.5 50 150 55 to 150 Unit V V A A A A A mJ W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID *3 IDP *1 IS ISP IAS EAS PD Tch Tstg *3 *1 *2 *2 *4 *3 Limited only by maximum temperature allowed. *4 TC=25C  Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) Limits 2.5 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.10 - Rev.A R6010ANX  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 600 2.5 3.0 Typ. 0.43 1050 720 35 25 30 70 30 25 5 12 Max. 100 100 4.5 0.56 Unit nA V A V  S pF pF pF ns ns ns ns nC nC nC Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=600V, VGS=0V VDS=10V, ID=1mA ID=5A, VGS=10V ID=5A, VDS=10V VDS=25V VGS=0V f=1MHz VDD 300V, ID=5A VGS=10V RL=60 RG=10 VDD 300V, ID=10A VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Unit V Conditions Is=10A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.10 - Rev.A R6010ANX Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 3 Ta=25°C Pulsed 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 10 VGS=10.0V VGS=7.0V 8 Ta=25°C Pulsed VGS=10.0V VGS=7.0V Drain Current : ID [A] VGS=6.0V 6 Drain Current : ID [A] 2 VGS=6.0V VGS=5.0V 4 VGS=5.0V 1 2 VGS=4.0V 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] 0 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] VGS=4.0V Fig.3 Typical Transfer Characteristics 100 VDS=10V pulsed Gate Threshold Voltage : VGS(th) [V] 10 Drain Currnt : ID [A] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 4 5 Fig.4 Gate Threshold Voltage vs. Channel Temperature VDS=10V ID=1mA pulsed 1 3 0.1 2 0.01 1 0.001 0 1 2 3 4 5 6 7 8 9 10 Gate-Source Voltage : VGS [V] 0 -50 -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 10 Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 1.2 Static Drain-Source On-State Resistance RDS(on) [W ] Static Drain-Source On-State Resistance RDS(on) [W ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 VGS=10V pulsed VGS=10V pulsed 1 0.8 ID=10A 0.6 ID=5A 0.1 0.4 0.2 0.01 0.1 1 10 100 Drain Current : ID [A] 0 -50 -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.10 - Rev.A R6010ANX 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 100 VDS=10V pulsed 100 Fig.8 Source Current vs. Source-Drain Voltage VGS=0V pulsed Forward Transfer Admittance Yfs [S] Source Current : Is [A] 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 1 0.1 0.1 0.01 0.01 0.1 1 Drain Current : ID [A] 10 100 0.0 0.5 1.0 1.5 Source-Drain Voltage : VSD [V] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1.0 Ta=25°C Pulsed Static Drain-Source On-State Resistance RDS(on) [W ] 0.8 1000 Switching Time : t [ns] 10000 Fig.10 Switching Characteristics tf 0.6 ID=10A 0.4 ID=5A 100 td(off) td(on) 10 0.2 tr VDD≒300V VGS=10V RG=10Ω Ta=25°C Pulsed 10 100 0.0 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : VGS [V] 1 0.01 0.1 1 Drain Current : ID [A] Fig.11 Dynamic Input Characteristics 10 Ta=25°C VDD=300V ID=10A Pulsed Capacitance : C [pF] 100000 Fig.12 Typical Capacitance vs. Drain-Source Voltage Ta=25°C f=1MHz VGS=0V 10000 Coss 1000 Ciss 100 Crss 10 8 Gate-Source Voltage : VGS [V] 6 4 2 0 0 5 10 15 20 25 Total Gate Charge : Qg [nC] 1 0.01 0.1 1 10 100 1000 10000 Drain-Source Voltage : VDS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.10 - Rev.A R6010ANX 　 Data Sheet Fig.13 Reverse Recovery Time vs. Source Current 1000 Ta=25°C Vgs=0V di/dt=100A/us Pulsed 10 Drain Current : ID [ A ] 100 Fig.14 Maximum Safe Operating Area Reverse Recovery Time : trr [ns] Operation in this area is limited by RDS(on) (VGS = 10V) 1 PW = 100μs 100 PW = 1ms 0.1 PW = 10ms Ta=25°C Single Pulse 10 0 1 10 100 Source Current : IS [A] 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width r（t） 10 Ta=25°C Single Pulse 1 Normalized Transient Thermal Resistance : 0.1 0.01 0.001 Rth(ch-a)=52.3°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.10 - Rev.A R6010ANX  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS IAS VDD EAS = 1 2 L IAS 2 D.U.T. RG VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A