R6012ANX
Transistors
10V Drive Nch MOSFET
R6012ANX
Structure Silicon N-channel MOSFET Dimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5 2.8
Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy.
15.0
12.0
8.0
2.5
1.3
1.2
14.0
0.8
(1)Base (2)Collector (3)Emitter
2.54
(1) (2) (3)
2.54
0.75
2.6
Applications Switching
Packaging specifications
Package Type Code Basic ordering unit (pieces) R6012ANX Bulk − 500
Inner circuit
∗1
Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum temperature allowed
Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg
∗3 ∗1 ∗3 ∗1 ∗2 ∗2
Limits 600 ±30 ±12 ±48 12 48 6 9.6 50 150 −55 to +150
Unit V V A A A A A mJ W °C °C
(1)
(1) Gate (2) Drain (3) Source
(2)
(3) ∗1 Body Diode
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R6012ANX
Transistors
Thermal resistance
Parameter Channel to case Symbol Rth(ch-c) Limits 2.5 Unit °C/W
Electrical characteristics (Ta=25°C)
Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
∗ Pulsed
Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) ∗ | Yfs | Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗
Min. − 600 − 2.5 − 3.5 − − − − − − − − − −
Typ. − − − − 0.32 − 1300 890 45 30 30 90 35 35 7 15
Max. ±100 − 100 4.5 0.42 − − − − − − − − − − −
Unit nA V µA V Ω S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=±30V, VDS=0V ID=1mA, VGS=0V VDS=600V, VGS=0V VDS=10V, ID=1mA ID=6A, VGS=10V ID=6A, VDS=10V VDS=25V VGS=0V f=1MHz ID=6A, VDD 300V VGS=10V RL=50Ω RG=10Ω VDD 300V ID=12A VGS=10V RL=25Ω / RG=10Ω
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter Forward voltage
∗ Pulsed
Symbol VSD ∗
Min. −
Typ. −
Max. 1.5
Unit V
Conditions IS= 12A, VGS=0V
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R6012ANX
Transistors
Electrical characteristic curves
100 Operation in this area is limited by RDS(ON) PW =100us DRAIN CURRENT: ID ( A) PW =1ms
40 8.0V 30
10V
20 Ta= 25°C Pulsed DRAIN CURRENT: ID ( A) 7.0V 15 6.5V 10 6.0V 5.0V 5 VGS= 4.5V 0 30 40 50 0 1 2 3 4 5 Ta= 25°C Pulsed 10V 8.0V 7.0V 5.5V
DRAIN CURRENT : ID ( A)
10
6.5V 20 6.0V 10
1 DC operation 0.1 Ta = 25°C Single Pulse 0.01 0.1
5.0V VGS= 4.5V
0 1 10 100 1000 0 10 20 DRAIN-SOURCE VOLTAGE : VDS ( V ) Fig.1 Maximum Safe Operating Aera DRAIN-SOURCE VOLTAGE: VDS ( V) Fig.2: Typical Output Characteristics( Ⅰ)
DRAIN-SOURCE VOLTAGE: VDS ( V) Fig.3: Typical Output Characteristics( Ⅱ)
100
GATE THRESHOLD VOLTAGE: VGS(th) ( V)
5 4 3 2 1 0 -50
DRAIN CURRENT : ID ( A)
10
Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) ( Ω)
VDS= 10V Pulsed
6 VDS= 10V ID = 1mA
10 VGS= 10V Pulsed
1
1
0.1
0.1
Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.01 0.1 1 10 100
0.01 0 1 2 3 4 5 6 7
0
50
100
150
0.01 0.001
GATE-SOURCE VOLTAGE : VGS ( V) Fig.4 Typical Transfer Characteristics
CHANNEL TEMPERATURE: Tc h ( °C) Fig.5 Gate Threshold Voltage vs. Channel Temperature
DRAIN CURRENT : ID ( A) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
0.8 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) ( Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) ( Ω) Ta=25°C Pulsed 0.6 ID =12A 0.4 ID =6A 0.2
0.8
FORWARD TRANSFER ADMITTANCE : |Yfs| (S)
VGS= 10V Pulsed
100
0.6 ID = 12A 0.4 ID = 6A 0.2
10 VDS= 10V Pulsed
1
0.1
0.01
Ta= -25°C Ta= 25°C Ta= 75°C Ta= 125°C
0 0 5 10 15 GATE-SOURCE VOLTAGE : VGS ( V) Fig.7 Static Drain-Source On-State Resistance vs. Gate Source
0 -50
0
50
100
150
0.001 0.001
0.01
0.1
1
10
100
CHANNEL TEMPERATURE: Tch ( °C) Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature
DRAIN CURRENT : ID ( A) Fig.9 Forward Transfer Admittance vs. Drain Current
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R6012ANX
Transistors
100 REVERSE DRAIN CURRENT : IDR ( A)
10000 GATE-SOURCE VOLTAGE : VGS ( V) VGS= 0V Pulsed CAPACITANCE : C (pF) Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 1000 C os s 100 C is s
15 Ta= 25°C VDD = 300V ID = 12A R G= 10Ω Pulsed
10
10
1
Crs s
5
0.1
10
Ta= 25°C f= 1MHz VGS= 0V 0.1 1 10 100 1000
0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD ( V) Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage
1
0 0 10 20 30 40 50 TOTAL GATE CHARGE : Qg ( nC) Fig.12 Dynamic Input Characteristics
DRAIN-SOURCE VOLTAGE : VDS ( V) Fig.11 Typical Capacitance vs. Drain-Source Voltage
1000 REVERSE RECOVERY TIME: trr ( ns)
10000 tf SWITCHING TIME : t (ns) 1000 td(off) 100 Ta= 25°C VDD = 300V VGS= 10V R G= 10Ω Pulsed
100 Ta= 25°C di / dt= 100A / µs VGS= 0V Pulsed 10 0.1 1 10 100 REVERSE DRAIN CURRENT : IDR ( A) Fig.13 Reverse Recovery Time vs.Reverse Drain Current
10 tr 1 0.01 0.1 1 10 100 DRAIN CURRENT : ID ( A) Fig.14 Switching Characteristics td(on)
10 NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) R th(ch-a) = 53.0 °C/W
1
0.1
0.01
0.001
0.0001 0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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R6012ANX
Transistors
Switching characteristics measurement circuit
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
IG(Const.)
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
5/5
Appendix
Notes
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Appendix1-Rev3.0
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