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R6012ANX

R6012ANX

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    R6012ANX - 10V Drive Nch MOSFET - Rohm

  • 数据手册
  • 价格&库存
R6012ANX 数据手册
R6012ANX Transistors 10V Drive Nch MOSFET R6012ANX Structure Silicon N-channel MOSFET Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V. 4) Drive circuits can be simple. 5) Parallel use is easy. 15.0 12.0 8.0 2.5 1.3 1.2 14.0 0.8 (1)Base (2)Collector (3)Emitter 2.54 (1) (2) (3) 2.54 0.75 2.6 Applications Switching Packaging specifications Package Type Code Basic ordering unit (pieces) R6012ANX Bulk − 500 Inner circuit ∗1 Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Total power dissipation (Tc=25°C) Channel temperature Range of storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 L 500µH, VDD=50V, RG=25Ω, Starting, Tch=25°C ∗3 Limited only by maximum temperature allowed Symbol VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg ∗3 ∗1 ∗3 ∗1 ∗2 ∗2 Limits 600 ±30 ±12 ±48 12 48 6 9.6 50 150 −55 to +150 Unit V V A A A A A mJ W °C °C (1) (1) Gate (2) Drain (3) Source (2) (3) ∗1 Body Diode 1/5 R6012ANX Transistors Thermal resistance Parameter Channel to case Symbol Rth(ch-c) Limits 2.5 Unit °C/W Electrical characteristics (Ta=25°C) Parameter Gate-source leakage Drain-source breakdown voltage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge ∗ Pulsed Symbol IGSS V(BR)DSS IDSS VGS(th) RDS(on) ∗ | Yfs | Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ Min. − 600 − 2.5 − 3.5 − − − − − − − − − − Typ. − − − − 0.32 − 1300 890 45 30 30 90 35 35 7 15 Max. ±100 − 100 4.5 0.42 − − − − − − − − − − − Unit nA V µA V Ω S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±30V, VDS=0V ID=1mA, VGS=0V VDS=600V, VGS=0V VDS=10V, ID=1mA ID=6A, VGS=10V ID=6A, VDS=10V VDS=25V VGS=0V f=1MHz ID=6A, VDD 300V VGS=10V RL=50Ω RG=10Ω VDD 300V ID=12A VGS=10V RL=25Ω / RG=10Ω Body diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage ∗ Pulsed Symbol VSD ∗ Min. − Typ. − Max. 1.5 Unit V Conditions IS= 12A, VGS=0V 2/5 R6012ANX Transistors Electrical characteristic curves 100 Operation in this area is limited by RDS(ON) PW =100us DRAIN CURRENT: ID ( A) PW =1ms 40 8.0V 30 10V 20 Ta= 25°C Pulsed DRAIN CURRENT: ID ( A) 7.0V 15 6.5V 10 6.0V 5.0V 5 VGS= 4.5V 0 30 40 50 0 1 2 3 4 5 Ta= 25°C Pulsed 10V 8.0V 7.0V 5.5V DRAIN CURRENT : ID ( A) 10 6.5V 20 6.0V 10 1 DC operation 0.1 Ta = 25°C Single Pulse 0.01 0.1 5.0V VGS= 4.5V 0 1 10 100 1000 0 10 20 DRAIN-SOURCE VOLTAGE : VDS ( V ) Fig.1 Maximum Safe Operating Aera DRAIN-SOURCE VOLTAGE: VDS ( V) Fig.2: Typical Output Characteristics( Ⅰ) DRAIN-SOURCE VOLTAGE: VDS ( V) Fig.3: Typical Output Characteristics( Ⅱ) 100 GATE THRESHOLD VOLTAGE: VGS(th) ( V) 5 4 3 2 1 0 -50 DRAIN CURRENT : ID ( A) 10 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) ( Ω) VDS= 10V Pulsed 6 VDS= 10V ID = 1mA 10 VGS= 10V Pulsed 1 1 0.1 0.1 Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 0.01 0.1 1 10 100 0.01 0 1 2 3 4 5 6 7 0 50 100 150 0.01 0.001 GATE-SOURCE VOLTAGE : VGS ( V) Fig.4 Typical Transfer Characteristics CHANNEL TEMPERATURE: Tc h ( °C) Fig.5 Gate Threshold Voltage vs. Channel Temperature DRAIN CURRENT : ID ( A) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 0.8 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) ( Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(on) ( Ω) Ta=25°C Pulsed 0.6 ID =12A 0.4 ID =6A 0.2 0.8 FORWARD TRANSFER ADMITTANCE : |Yfs| (S) VGS= 10V Pulsed 100 0.6 ID = 12A 0.4 ID = 6A 0.2 10 VDS= 10V Pulsed 1 0.1 0.01 Ta= -25°C Ta= 25°C Ta= 75°C Ta= 125°C 0 0 5 10 15 GATE-SOURCE VOLTAGE : VGS ( V) Fig.7 Static Drain-Source On-State Resistance vs. Gate Source 0 -50 0 50 100 150 0.001 0.001 0.01 0.1 1 10 100 CHANNEL TEMPERATURE: Tch ( °C) Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature DRAIN CURRENT : ID ( A) Fig.9 Forward Transfer Admittance vs. Drain Current 3/5 R6012ANX Transistors 100 REVERSE DRAIN CURRENT : IDR ( A) 10000 GATE-SOURCE VOLTAGE : VGS ( V) VGS= 0V Pulsed CAPACITANCE : C (pF) Ta= 125°C Ta= 75°C Ta= 25°C Ta= -25°C 1000 C os s 100 C is s 15 Ta= 25°C VDD = 300V ID = 12A R G= 10Ω Pulsed 10 10 1 Crs s 5 0.1 10 Ta= 25°C f= 1MHz VGS= 0V 0.1 1 10 100 1000 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD ( V) Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 1 0 0 10 20 30 40 50 TOTAL GATE CHARGE : Qg ( nC) Fig.12 Dynamic Input Characteristics DRAIN-SOURCE VOLTAGE : VDS ( V) Fig.11 Typical Capacitance vs. Drain-Source Voltage 1000 REVERSE RECOVERY TIME: trr ( ns) 10000 tf SWITCHING TIME : t (ns) 1000 td(off) 100 Ta= 25°C VDD = 300V VGS= 10V R G= 10Ω Pulsed 100 Ta= 25°C di / dt= 100A / µs VGS= 0V Pulsed 10 0.1 1 10 100 REVERSE DRAIN CURRENT : IDR ( A) Fig.13 Reverse Recovery Time vs.Reverse Drain Current 10 tr 1 0.01 0.1 1 10 100 DRAIN CURRENT : ID ( A) Fig.14 Switching  Characteristics td(on) 10 NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) Ta = 25°C Single Pulse : 1Unit Rth(ch-a)(t) = r(t)×Rth(ch-a) R th(ch-a) = 53.0 °C/W 1 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width 4/5 R6012ANX Transistors Switching characteristics measurement circuit Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms IG(Const.) Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform 5/5 Appendix Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM CO.,LTD. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev3.0
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