R6012FNX

Data Sheet 10V Drive Nch MOSFET R6012FNX  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage 　 VGSS garanteed to be ±30V . 5) Drive circuits can be simple. 6) Parallel use is easy. 14.0 2.5 Features 1) Fast reverse recovery time (trr) 15.0 12.0 8.0 1.3 1.2 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 Application Switching  Inner circuit Packaging specifications Type R6012FNX Package Code Basic ordering unit (pieces) Bulk 500  ∗1 (1) (2) (3) (1) Gate (2) Drain (3) Source 1 BODY DIODE Absolute maximum ratings (Ta  25°C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Power dissipation (Tc=25C) Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L≒ 500H, VDD=50V, Rg=25 ,starting Tch=25°C *3 Limited only by maximum temperature allowed. Limits 600 30 Unit V V A A A A A mJ W C C VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg *3 *1 *3 *1 *2 *2 12 48 12 48 6 9.6 50 150 55 to 150  Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) Limits 2.5 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.08 - Rev.A R6012FNX  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) RDS (on) * l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 600 3 3.5 Typ. 0.39 1300 890 45 30 37 77 20 35 10 15 Max. 100 100 5 0.51 Unit nA V A V  S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±30V, VDS=0V ID=1mA, VGS=0V VDS=600V, VGS=0V VDS=10V, ID=1mA ID=6A, VGS=10V ID=6A, VDS=10V VDS=25V VGS=0V f=1MHz ID=6A, VDD 300V VGS=10V RL=50 RG=10 ID=12A, VDD 300V VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Reverse Recovery Time *Pulsed Symbol VSD * trr * Min. 45 Typ. 75 Max. 1.5 105 Unit V ns Conditions Is=12A, VGS=0V Is=12A, di/dt=100A/ s www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A R6012FNX Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 3 Ta=25°C Pulsed VGS=10.0V VGS=8.0V Drain Current : ID [A] 2 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 20 Ta=25°C Pulsed VGS=10.0V VGS=8.0V 15 Drain Current : ID [A] VGS=7.0V VGS=7.0V VGS=6.5V VGS=6.0V 10 VGS=6.5V 1 VGS=5.5V 5 VGS=5.0V 0 0 0.2 0.4 0.6 0.8 1 0 2 4 6 VGS=6.0V VGS=5.0V 0 Drain-Source Voltage : VDS [V] VGS=5.5V 8 10 Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics 100 VDS=10V pulsed 10 Drain Currnt : ID [A] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 5 Fig.4 Gate Threshold Voltage vs. Channel Temperature VDS=10V ID=1mA pulsed Gate Threshold Voltage : VGS(th) [V] 4 1 0.1 3 0.01 0.001 0.0 2.0 4.0 6.0 8.0 10.0 Gate-Source Voltage : VGS [V] 2 -50 0 50 100 150 Channel Temperature : Tch [℃] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1 Static Drain-Source On-State Resistance : RDS(on) [Ω] VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [Ω] Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 1 VGS=10V pulsed 0.8 ID=12A ID=6A 0.6 0.4 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.2 0.1 0.01 0 0.1 1 Drain Current : ID [A] 10 100 -50 0 50 100 150 Channel Temperature : Tch [℃] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.08 - Rev.A R6012FNX 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 100 VDS=10V pulsed 10 Forward Transfer Admittance Yfs [S] 10 Source Current : Is [A] 100 Fig.8 Source Current vs. Source-Drain Voltage VGS=0V pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0.001 0.001 0.01 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 Drain Current : ID [A] Source-Drain Voltage : VSD [V] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1 Ta=25°C Pulsed Static Drain-Source On-State Resistance RDS(on) [Ω] 0.8 1000 Switching Time : t [ns] 10000 Fig.10 Switching Characteristics tf VDD≒300V VGS=10V RG=10Ω Ta=25°C Pulsed td(off) 0.6 ID=12A 0.4 ID=6A 100 td(on) 10 0.2 tr 0 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : VGS [V] 1 0.01 0.1 1 Drain Current : ID [A] 10 100 Fig.11 Dynamic Input Characteristics 12 Ta=25°C VDD=300V ID=12A Pulsed Capacitance : C [pF] 100000 Fig.12 Typical Capacitance vs. Drain-Source Voltage 10 Gate-Source Voltage : VGS [V] 10000 Ta=25°C f=1MHz VGS=0V 8 Ciss 1000 6 100 Coss 4 10 2 Crss 0 0 5 10 15 20 25 30 35 40 45 50 Total Gate Charge : Qg [nC] 1 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.08 - Rev.A R6012FNX 　 Data Sheet Fig.13 Reverse Recovery Time vs. Source Current 1000 100 Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) (VGS = 10V) Reverse Recovery Time : trr [ns] Ta=25°C Vgs=0V di/dt=100A/us Pulsed Drain Current : ID [ A ] 10 PW = 100μs 100 1 PW = 1ms 0.1 Ta=25°C Single Pulse 10 0 1 10 100 Source Current : IS [A] 0.01 0.1 1 10 100 PW = 10ms 1000 Drain-Source Voltage : VDS [ V ] Fig.15 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r（t） Ta=25°C Single Pulse 1 0.1 0.01 0.001 Rth(ch-a)=53.0°C/W Rth(ch-a)(t)=r(t)×Rth(ch-a) 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.08 - Rev.A R6012FNX  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS IAS VDD EAS = 1 2 L IAS 2 D.U.T. RG VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.08 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A