R6018ANX
Nch 600V 18A Power MOSFET
Outline
Datasheet
VDSS RDS(on) (Max.) ID PD
Features 1) Low on-resistance. 2) Fast switching speed.
600V 0.27Ω 18A 50W
TO-220FM
(1)(2)(3)
Inner circuit
3) Gate-source voltage (VGSS) guaranteed to be ±30V.
(1) Gate (2) Drain (3) Source *1 Body Diode
4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant Packaging specifications Packing Reel size (mm) Application Switching Power Supply Tape width (mm) Type
Bulk 500 R6018ANX
Basic ordering unit (pcs) Taping code Marking
Absolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Reverse diode dv/dt Tc = 25°C Tc = 100°C Symbol VDSS ID *1 ID *1 ID,pulse *2 VGSS EAS *3 EAR
*4
Value 600 ±18 ±8.6 ±72 ±30 21.6 3.5 9 50 150 −55 to +150 15
Unit V A A A V mJ mJ A W °C °C V/ns
IAR *3 PD Tj Tstg dv/dt *5
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1/13
2012.01 - Rev.B
R6018ANX
Absolute maximum ratings Parameter Drain - Source voltage slope Symbol dv/dt Conditions VDS = 480V, ID = 18A Tj = 125°C
Data Sheet
Values 50
Unit V/ns
Thermal resistance Values Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s Symbol Min. RthJC RthJA Tsold Typ. Max. 2.5 70 265 °C/W °C/W °C Unit
Electrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Min. Drain - Source breakdown voltage Drain - Source avalanche breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 600 Typ. Max. V Unit
V(BR)DS
VGS = 0V, ID = 18A VDS = 600V, VGS = 0V
-
700
-
V
Zero gate voltage drain current
IDSS
Tj = 25°C Tj = 125°C
2.5
0.1 -
100 1000 ±100 4.5
µA
Gate - Source leakage current Gate threshold voltage
IGSS VGS (th)
VGS = ±30V, VDS = 0V VDS = 10V, ID = 1mA VGS = 10V, ID = 9A
nA V
Static drain - source on - state resistance
RDS(on) *6 Tj = 25°C Tj = 125°C
-
0.21 0.42 8.4
0.27 -
Ω
Gate input resistance
RG
f = 1MHz, open drain
Ω
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2/13
2012.01 - Rev.B
R6018ANX
Electrical characteristics (Ta = 25°C) Values Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related Effective output capacitance, time related Turn - on delay time Rise time Turn - off delay time Fall time Symbol gfs *6 Ciss Coss Crss Co(er) VGS = 0V VDS = 0V to 480V Co(tr) td(on) tr
*6 *6 *6
Data Sheet
Conditions Min. VDS = 10V, ID = 9.0A, VGS = 0V VDS = 25V f = 1MHz 6.5 Typ. 13 2050 1400 60 80 Max. -
Unit S
pF
pF 85 37 85 155 65 ns 310 130
VDD ⋍ 300V, VGS = 10V ID = 9A RL = 33.3Ω RG = 10Ω
-
td(off) tf
*6
Gate Charge characteristics (Ta = 25°C) Values Parameter Total gate charge Gate - Source charge Gate - Drain charge Gate plateau voltage Symbol Qg *6 Qgs *6 Qgd
*6
Conditions Min. VDD ⋍ 300V ID = 18A VGS = 10V VDD ⋍ 300V, ID = 18A Typ. 55 10 22 6.0 Max. -
Unit
nC
V(plateau)
V
*1 Limited only by maximum temperature allowed. *2 PW ≤ 10µs, Duty cycle ≤ 1% *3 L ⋍ 500µH, VDD = 50V, RG = 25Ω, starting Tj = 25°C *4 L ⋍ 500µH, VDD = 50V, RG = 25Ω, starting Tj = 25°C, f = 10kHz *5 Reference measurement circuits Fig.5-1. *6 Pulsed
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3/13
2012.01 - Rev.B
R6018ANX
Body diode electrical characteristics (Source-Drain) (Ta = 25°C) Values Parameter Symbol Conditions Min. Inverse diode continuous, forward current Inverse diode direct current, pulsed Forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current I S *1 Tc = 25°C ISM *2 VSD
*6
Data Sheet
Unit Typ. Max. 18 A
-
VGS = 0V, IS = 18A IS = 18A di/dt = 100A/µs Tj = 25°C -
484 6.8 28 730
72 1.5 -
A V ns µC A A/µs
trr *6 Qrr
*6
Irrm *6 dirr/dt
Typical Transient Thermal Characteristics Symbol Rth1 Rth2 Rth3 Value 0.106 0.636 2.13 K/W Unit Symbol Cth1 Cth2 Cth3 Value 0.00349 0.0478 0.516 Ws/K Unit
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4/13
2012.01 - Rev.B
R6018ANX
Electrical characteristic curves
Data Sheet
Fig.1 Power Dissipation Derating Curve
120
Fig.2 Maximum Safe Operating Area
100
Operation in this area is limited by RDS(ON)
Power Dissipation : PD/PD max. [%]
100 10 80 60 40 20 0 0 50 100 150 200 0.01
Drain Current : ID [A]
1 PW = 100us PW = 1ms 0.1 Ta = 25ºC Single Pulse 0.1 1 10 100 1000 PW = 10ms
Junction Temperature : Tj [°C]
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r(t)
1000 100 10 1 0.1 0.01 0.001 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 0.01 1 100 Ta = 25ºC Single Pulse Rth(ch-a)(t) = r(t)×Rth(ch-a) Rth(ch-a) = 70ºC/W
0.0001 0.0001
Pulse Width : PW [s]
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5/13
2012.01 - Rev.B
R6018ANX
Electrical characteristic curves
Data Sheet
Fig.4 Avalanche Current vs Inductive Load
12 10
Fig.5 Avalanche Power Losses
5000
Avalanche Power Losses : PAR [W]
Ta = 25ºC VDD = 50V , RG = 25Ω VGF = 10V , VGR = 0V
4500 4000 3500 3000 2500 2000 1500 1000 500
Ta = 25ºC
Avalanche Current : IAR [A]
8 6 4 2 0 0.01
0.1
1
10
100
0 1.0E+04
1.0E+05
1.0E+06
Coil Inductance : L [mH]
Frequency : f [Hz]
Fig.6 Avalanche Energy Derating Curve vs Junction Temperature
120
Avalanche Energy : EAS / EAS max. [%]
100 80 60 40 20 0 0 25 50 75 100 125 150 175
Junction Temperature : Tj [ºC]
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6/13
2012.01 - Rev.B
R6018ANX
Electrical characteristic curves
Data Sheet
Fig.7 Typical Output Characteristics(I)
18 10V 15 6.0V 5.5V
Fig.8 Typical Output Characteristics(II)
18 15 Ta = 25ºC Pulsed 10V 8.0V 7.0V
Drain Current : ID [A]
Drain Current : ID [A]
12 9
Ta = 25ºC Pulsed
12 9 6 3
6.5V 6.0V
5.5V
5.0V 6 3 0 0 10 20 30 40 50
5.0V
VGS= 4.5V
VGS= 4.5V 0 0 1 2 3 4 5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.9 Tj = 150°C Typical Output Characteristics(I)
18 15 10V 6.5V 10 6.0V Ta = 150ºC Pulsed 8
Fig.10 Tj = 150°C Typical Output Characteristics(II)
Ta = 150ºC Pulsed
10V 6.0V 5.0V
Drain Current : ID [A]
12 9 6 VGS = 4.5V 3 0 0 10 20 30 40 50
Drain Current : ID [A]
5.5V
6 VGS= 4.5V 4
5.0V
2
0 0 1 2 3 4 5
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
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7/13
2012.01 - Rev.B
R6018ANX
Electrical characteristic curves
Data Sheet
Fig.11 Breakdown Voltage vs. Junction Temperature
Drain - Source Breakdown Voltage : V(BR)DSS [V]
900 850
Fig.12 Typical Transfer Characteristics
100 VDS = 10V Pulsed 10 Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC
800 750 700 650 600 550 500 -50 0 50 100 150 0.001 0
Drain Current : ID [A]
1
0.1
0.01
1
2
3
4
5
6
7
Junction Temperature : Tj [°C]
Gate - Source Voltage : VGS [V]
Fig.13 Gate Threshold Voltage vs. Junction Temperature
6 5 4 3 2 1 0 -50 VDS = 10V ID = 1mA
Fig.14 Transconductance vs. Drain Current
100 VDS = 10V Pulsed
Gate Threshold Voltage : VGS(th) [V]
Transconductance : gfs [S]
10
1
0.1
Ta = -25ºC Ta = 25ºC Ta = 75ºC Ta = 125ºC
0
50
100
150
0.01 0.01
0.1
1
10
100
Junction Temperature : Tj [°C]
Drain Current : ID [A]
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8/13
2012.01 - Rev.B
R6018ANX
Electrical characteristic curves
Data Sheet
Fig.15 Static Drain - Source On - State Resistance vs. Gate Source Voltage
Static Drain - Source On-State Resistance : RDS(on) [Ω] Static Drain - Source On-State Resistance : RDS(on) [Ω]
0.6 0.5 0.4 0.3 0.2 0.1 0 0 5 10 15 ID = 18A Ta = 25ºC Pulsed
Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature
0.6 0.5 0.4 ID = 18A 0.3 0.2 0.1 0 -50 ID = 9 A VGS = 10V Pulsed
ID = 9 A
0
50
100
150
Gate - Source Voltage : VGS [V]
Junction Temperature : Tj [ºC]
Fig.17 Static Drain - Source On - State Resistance vs. Drain Current
10
Static Drain - Source On-State Resistance : RDS(on) [Ω]
VGS= 10V Pulsed
1
0.1
Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC
0.01 0.1 1 10 100
Drain Current : ID [A]
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9/13
2012.01 - Rev.B
R6018ANX
Electrical characteristic curves
Data Sheet
Fig.18 Typical Capacitance vs. Drain - Source Voltage
10000
Fig.19 Coss Stored Energy
14 Ta = 25ºC 12
1000
Ciss Coss
Coss Stored Energy : EOSS [uJ]
Capacitance : C [pF]
10 8 6 4 2 0
Crss 100
10 Ta = 25ºC f = 1MHz VGS = 0V 1 0.1 1 10 100 1000
0
200
400
600
Drain - Source Voltage : VDS [V]
Drain - Source Voltage : VDS [V]
Fig.20 Switching Characteristics
10000 tf 1000 Ta = 25ºC VDD ⋍ 300V VGS = 10V RG = 10Ω Pulsed
Fig.21 Dynamic Input Characteristics
15 Ta = 25ºC VDD ⋍ 300V ID = 18A Pulsed
td(off) 100
Gate - Source Voltage : VGS [V]
100
Switching Time : t [ns]
10
5
10 tr
td(on)
1 0.01 0.1 1 10
0 0 10 20 30 40 50 60 70
Drain Current : ID [A]
Total Gate Charge : Qg [nC]
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10/13
2012.01 - Rev.B
R6018ANX
Electrical characteristic curves
Data Sheet
Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage
100
Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current
1000
Inverse Diode Forward Current : IS [A]
10
1
Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC
Reverse Recovery Time : trr [ns]
VGS = 0V Pulsed
100
0.1
Ta = 25ºC di / dt = 100A / us VGS = 0V Pulsed 10 0.1 1 10 100
0.01 0 0.5 1 1.5
Source - Drain Voltage : VSD [V]
Inverse Diode Forward Current : IS [A]
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11/13
2012.01 - Rev.B
R6018ANX
Measurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms
Data Sheet
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit
Fig.4-2 dv/dt Waveform
Fig.5-1 di/dt Measurement Circuit
Fig.5-2 di/dt Waveform
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12/13
2012.01 - Rev.B
R6018ANX
Dimensions (Unit : mm)
D E E1
φp
F A4
Data Sheet
TO-220FM
A
A2
b1
A1
A
Q
L
e b x A
c
DIM A A1 A2 A4 b b1 c D E e E1 F L p Q x
MILIMETERS MIN MAX 16.60 17.60 1.80 2.20 14.80 15.40 6.80 7.20 0.70 0.85 1.10 1.50 0.70 0.85 9.90 10.30 4.40 4.80 2.54 2.70 3.00 2.80 3.20 11.50 12.50 3.00 3.40 2.10 3.10 0.381
INCHES MIN 0.654 0.071 0.583 0.268 0.028 0.043 0.028 0.39 0.173 0.10 0.106 0.11 0.453 0.118 0.083 0.118 0.126 0.492 0.134 0.122 0.015 MAX 0.693 0.087 0.606 0.283 0.033 0.059 0.033 0.406 0.189
Dimension in mm/inches
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13/13
2012.01 - Rev.B
Notice
Notes
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R1120A