R6020ANX_12

R6020ANX Nch 600V 20A Power MOSFET Outline Datasheet VDSS RDS(on) (Max.) ID PD Features 1) Low on-resistance. 2) Fast switching speed. 600V 0.22Ω 20A 50W TO-220FM (1)(2)(3) Inner circuit 3) Gate-source voltage (VGSS) guaranteed to be ±30V. (1) Gate (2) Drain (3) Source *1 Body Diode 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant Packaging specifications Packing Reel size (mm) Application Switching Power Supply Tape width (mm) Type Bulk 500 R6020ANX Basic ordering unit (pcs) Taping code Marking Absolute maximum ratings (Ta = 25°C) Parameter Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25°C) Junction temperature Range of storage temperature Reverse diode dv/dt Tc = 25°C Tc = 100°C Symbol VDSS ID *1 ID *1 ID,pulse *2 VGSS EAS *3 EAR *4 IAR *3 Value 600 ±20 ±9.7 ±80 ±30 26.7 3.5 10 50 150 −55 to +150 15 Unit V A A A V mJ mJ A W °C °C V/ns PD Tj Tstg dv/dt *5 www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/13 2012.02 - Rev.B R6020ANX Absolute maximum ratings Parameter Drain - Source voltage slope Symbol dv/dt Conditions VDS = 480V, ID = 20A Tj = 125°C Data Sheet Values 50 Unit V/ns Thermal resistance Values Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s Symbol Min. RthJC RthJA Tsold Typ. Max. 2.5 70 265 °C/W °C/W °C Unit Electrical characteristics (Ta = 25°C) Values Parameter Symbol Conditions Min. Drain - Source breakdown voltage Drain - Source avalanche breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 600 Typ. Max. V Unit V(BR)DS VGS = 0V, ID = 20A VDS = 600V, VGS = 0V - 700 - V Zero gate voltage drain current IDSS Tj = 25°C Tj = 125°C 2.5 0.1 - 100 1000 ±100 4.5 µA Gate - Source leakage current Gate threshold voltage IGSS VGS (th) VGS = ±30V, VDS = 0V VDS = 10V, ID = 1mA VGS = 10V, ID = 10A nA V Static drain - source on - state resistance RDS(on) *6 Tj = 25°C Tj = 125°C - 0.17 0.36 13.8 0.22 - Ω Gate input resistance RG f = 1MHz, open drain Ω www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/13 2012.02 - Rev.B R6020ANX Electrical characteristics (Ta = 25°C) Values Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related Effective output capacitance, time related Turn - on delay time Rise time Turn - off delay time Fall time Symbol gfs *6 Ciss Coss Crss Co(er) VGS = 0V VDS = 0V to 480V Co(tr) td(on) tr *6 *6 *6 Data Sheet Conditions Min. VDS = 10V, ID = 10A VGS = 0V VDS = 25V f = 1MHz 7 Typ. 14 2040 1660 70 104 Max. - Unit S pF pF 104 40 60 230 70 ns 460 140 VDD ⋍ 300V, VGS = 10V ID = 10A RL = 30Ω RG = 10Ω - td(off) tf *6 Gate Charge characteristics (Ta = 25°C) Values Parameter Total gate charge Gate - Source charge Gate - Drain charge Gate plateau voltage Symbol Qg *6 Qgs *6 Qgd *6 Conditions Min. VDD ⋍ 300V ID = 20A VGS = 10V VDD ⋍ 300V, ID = 20A Typ. 65 10 25 6.0 Max. - Unit nC V(plateau) V *1 Limited only by maximum temperature allowed. *2 PW ≤ 10µs, Duty cycle ≤ 1% *3 L ⋍ 500µH, VDD = 50V, RG = 25Ω, starting Tj = 25°C *4 L ⋍ 500µH, VDD = 50V, RG = 25Ω, starting Tj = 25°C, f = 10kHz *5 Reference measurement circuits Fig.5-1. *6 Pulsed www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/13 2012.02 - Rev.B R6020ANX Body diode electrical characteristics (Source-Drain) (Ta = 25°C) Values Parameter Symbol Conditions Min. Inverse diode continuous, forward current Inverse diode direct current, pulsed Forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current I S *1 Tc = 25°C ISM *2 VSD *6 Data Sheet Unit Typ. Max. 20 A - VGS = 0V, IS = 10A IS = 20A di/dt = 100A/µs Tj = 25°C - 486 7.8 32 800 80 1.5 - A V ns µC A A/µs trr *6 Qrr *6 Irrm *6 dirr/dt Typical Transient Thermal Characteristics Symbol Rth1 Rth2 Rth3 Value 0.0789 0.579 2.17 K/W Unit Symbol Cth1 Cth2 Cth3 Value 0.00458 0.0603 0.549 Ws/K Unit www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/13 2012.02 - Rev.B R6020ANX Electrical characteristic curves Data Sheet Fig.1 Power Dissipation Derating Curve 120 Fig.2 Maximum Safe Operating Area 100 Operation in this area is limited by RDS(ON) Power Dissipation : PD/PD max. [%] 100 10 Drain Current : ID [A] 80 60 40 20 0 0 50 100 150 200 PW =100us PW =1ms 1 PW = 10ms 0.1 Ta = 25ºC Single Pulse 0.01 0.1 1 10 100 1000 Junction Temperature : Tj [°C] Drain - Source Voltage : VDS [V] Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Normalized Transient Thermal Resistance : r(t) 1000 100 10 1 0.1 0.01 0.001 0.0001 0.0001 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 0.01 1 100 Ta = 25ºC Single Pulse Rth(ch-a)(t) = ｒ(t)×Rth(ch-a) Rth(ch-a) = 70ºC/W Pulse Width : PW [s] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 5/13 2012.02 - Rev.B R6020ANX Electrical characteristic curves Data Sheet Fig.4 Avalanche Current vs Inductive Load 14 Fig.5 Avalanche Power Losses 5000 Avalanche Power Losses : PAR [W] 12 Avalanche Current : IAR [A] Ta = 25ºC VDD = 50V , RG = 25Ω VGF = 10V , VGR = 0V 4500 4000 3500 3000 2500 2000 1500 1000 500 Ta = 25ºC 10 8 6 4 2 0 0.01 0.1 1 10 100 0 1.0E+04 1.0E+05 1.0E+06 Coil Inductance : L [mH] Frequency : f [Hz] Fig.6 Avalanche Energy Derating Curve vs Junction Temperature 120 Avalanche Energy : EAS / EAS max. [%] 100 80 60 40 20 0 0 25 50 75 100 125 150 175 Junction Temperature : Tj [ºC] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 6/13 2012.02 - Rev.B R6020ANX Electrical characteristic curves Data Sheet Fig.7 Typical Output Characteristics(I) 20 10V 6.0V 15 5.5V Ta = 25ºC Pulsed Fig.8 Typical Output Characteristics(II) 20 Ta = 25ºC Pulsed 15 10V 8.0V 7.0V 6.5V 5.5V 6.0V Drain Current : ID [A] 10 5.0V 5 VGS= 4.5V 0 0 10 20 30 40 50 Drain Current : ID [A] 10 5.0V 5 VGS= 4.5V 0 0 1 2 3 4 5 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Fig.9 Tj = 150°C Typical Output Characteristics(I) 20 10V 6.5V 15 6.0V Ta = 150ºC Pulsed Fig.10 Tj = 150°C Typical Output Characteristics(II) 10 Ta = 150ºC Pulsed 8 10V 6.0V 5.0V Drain Current : ID [A] Drain Current : ID [A] 6 VGS= 4.5V 4 10 5.0V 5 VGS = 4.5V 2 0 0 10 20 30 40 50 0 0 1 2 3 4 5 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 7/13 2012.02 - Rev.B R6020ANX Electrical characteristic curves Data Sheet Drain - Source Breakdown Voltage : V(BR)DSS [V] Fig.11 Breakdown Voltage vs. Junction Temperature 900 850 800 Fig.12 Typical Transfer Characteristics 100 VDS = 10V Pulsed Drain Current : ID [A] 10 Ta= 125ºC Ta= 75ºC Ta= 25ºC Ta= -25ºC 750 700 650 600 550 500 -50 0 50 100 150 1 0.1 0.01 0 1 2 3 4 5 6 7 Junction Temperature : Tj [°C] Gate - Source Voltage : VGS [V] Fig.13 Gate Threshold Voltage vs. Junction Temperature 6 VDS = 10V ID = 1mA Fig.14 Transconductance vs. Drain Current 100 VDS = 10V Pulsed Gate Threshold Voltage : VGS(th) [V] 5 4 3 2 1 0 -50 Transconductance : gfs [S] 10 1 0.1 0.01 Ta = -25ºC Ta = 25ºC Ta = 75ºC Ta = 125ºC 0 50 100 150 0.001 0.001 0.01 0.1 1 10 100 Junction Temperature : Tj [°C] Drain Current : ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 8/13 2012.02 - Rev.B R6020ANX Electrical characteristic curves Data Sheet Fig.15 Static Drain - Source On - State Resistance vs. Gate Source Voltage Static Drain - Source On-State Resistance : RDS(on) [Ω] Ta = 25ºC Pulsed Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [Ω] 0.5 VGS = 10V Pulsed 0.5 0.4 0.4 0.3 ID = 20A ID = 10A 0.1 0.3 ID = 20A 0.2 ID = 10A 0.2 0.1 0 0 5 10 15 0 -50 0 50 100 150 Gate - Source Voltage : VGS [V] Junction Temperature : Tj [ºC] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current Static Drain - Source On-State Resistance : RDS(on) [Ω] 10 VGS = 10V Pulsed 1 0.1 Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC 0.01 0.1 1 10 100 0.01 0.001 Drain Current : ID [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 9/13 2012.02 - Rev.B R6020ANX Electrical characteristic curves Data Sheet Fig.18 Typical Capacitance vs. Drain - Source Voltage 10000 Fig.19 Coss Stored Energy 18 Coss Stored Energy : EOSS [uJ] 16 14 12 10 8 6 4 2 0 0 Ta = 25ºC 1000 Ciss Coss Crss Capacitance : C [pF] 100 10 Ta = 25ºC f = 1MHz VGS = 0V 1 0.01 0.1 1 10 100 1000 200 400 600 Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V] Fig.20 Switching Characteristics 10000 Ta = 25ºC VDD = 300V VGS = 10V RG = 10Ω Pulsed Fig.21 Dynamic Input Characteristics 15 1000 Gate - Source Voltage : VGS [V] Ta = 25ºC VDD = 300V ID = 20A Switching Time : t [ns] tf 100 RG = 10Ω Pulsed 10 td(off) 5 10 tr td(on) 1 0.01 0.1 1 10 100 0 0 10 20 30 40 50 60 70 Drain Current : ID [A] Total Gate Charge : Qg [nC] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 10/13 2012.02 - Rev.B R6020ANX Electrical characteristic curves Data Sheet Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage 100 Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current 1000 Inverse Diode Forward Current : IS [A] 10 1 Ta = 125ºC Ta = 75ºC Ta = 25ºC Ta = -25ºC Reverse Recovery Time : trr [ns] VGS = 0V Pulsed 100 0.1 Ta = 25ºC di / dt = 100A / us VGS = 0V Pulsed 10 0.1 1 10 100 0.01 0 0.5 1 1.5 Source - Drain Voltage : VSD [V] Inverse Diode Forward Current : IS [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 11/13 2012.02 - Rev.B R6020ANX Measurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms Data Sheet Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 12/13 2012.02 - Rev.B R6020ANX Dimensions (Unit : mm) D E E1 φp F A4 Data Sheet TO-220FM A A2 b1 A1 A Q L e b x A c DIM A A1 A2 A4 b b1 c D E e E1 F L p Q x MILIMETERS MIN MAX 16.60 17.60 1.80 2.20 14.80 15.40 6.80 7.20 0.70 0.85 1.10 1.50 0.70 0.85 9.90 10.30 4.40 4.80 2.54 2.70 3.00 2.80 3.20 11.50 12.50 3.00 3.40 2.10 3.10 0.381 INCHES MIN 0.654 0.071 0.583 0.268 0.028 0.043 0.028 0.39 0.173 0.10 0.106 0.11 0.453 0.118 0.083 0.118 0.126 0.492 0.134 0.122 0.015 MAX 0.693 0.087 0.606 0.283 0.033 0.059 0.033 0.406 0.189 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 13/13 2012.02 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. 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