R6020ANZ

Data Sheet 10V Drive Nch MOSFET R6020ANZ  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-3PF 4.5 5.5 15.5 φ3.6 10.0 3.0 0.75  Application Switching (1) Gate (2) Drain (3) Source 14.8 (1) (2) 2.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 26.5 16.5 14.5 0.44 16.5 3.5 2.0 2.0 3.0 2.0 (3) 0.9 5.45 5.45  Packaging specifications Type R6020ANZ Package Code Basic ordering unit (pieces) Bulk 360   Inner circuit ∗1  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25°C (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE Limits 600 30 20 80 20 80 10 26.7 120 150 55 to 150 Unit V V A A A A A mJ W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID *3 IDP IS ISP IAS *1 *3 *1 *2 EAS *2 PD *4 Tch Tstg *3 Limited only by maximum channel temperature allowed. *4 TC=25°C  Thermal resistance Parameter Channel to Case * T C=25°C Symbol Rth (ch-c) * Limits 1.04 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.10 - Rev.A R6020ANZ  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l * Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 600 2.95 7 Typ. 0.17 2040 1660 70 40 60 230 70 65 10 25 Max. 100 100 4.15 0.22 Unit nA V A V  S pF pF pF ns ns ns ns nC nC nC Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=600V, VGS=0V VDS=10V, ID=1mA ID=10A, VGS=10V VDS=10V, ID=10A VDS=25V VGS=0V f=1MHz VDD 300V, ID=10A VGS=10V RL=30 RG=10 VDD 300V ID=20A VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) Parameter Forward voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Unit V Conditions Is=20A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A R6020ANZ Electrical characteristic curves 　 Data Sheet Fig.1 Maximum Safe Operating Aera 100 PW =100us 40 35 DRAIN CURRENT : ID (A) DRAIN CURRENT: ID (A) 10 PW = 10ms 1 Operation in this area is limited by RDS(ON) Ta = 25°C Single Pulse 0.01 0.1 1 10 100 1000 DRAIN-SOURCE VOLTAGE : VDS ( V ) PW =1ms 30 25 20 Fig.2: Typical output characteristics(Ⅰ) VGS=10V VGS=8.0V VGS=6.5V DRAIN CURRENT: ID (A) 20 Fig.3: Typical output characteristics(Ⅱ) Ta= 25°C Pulsed 15 VGS=10V VGS=8.0V VGS=7.0V VGS=5.5V VGS=7.0V VGS=6.0V Ta= 25°C Pulsed VGS=6.5V 10 VGS=6.0V VGS=5.0V 5 VGS= 4.5V 0 VGS=5.5V 15 10 5 0 0 10 20 30 40 50 DRAIN-SOURCE VOLTAGE: VDS (V) VGS=5.0V VGS= 4.5V 0.1 0 1 2 3 4 5 DRAIN-SOURCE VOLTAGE: VDS (V) Fig.4 Typical Transfer Characteristics GATE THRESHOLD VOLTAGE: VGS(th) (V) 100 VDS= 10V Pulsed DRAIN CURRENT : ID (A) 10 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 6 Fig.5 Gate Threshold Voltage vs. Channel Temperature 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) VDS= 10V ID= 1mA Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 5 4 3 2 1 0 -50 VGS= 10V Pulsed 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 1 0.1 0.1 0.01 0 1 2 3 4 5 6 7 0 50 100 150 0.01 0.001 0.1 10 GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE: Tch (°C) DRAIN CURRENT : ID (A) Fig.7 Static Drain-Source On-State Resistance vs. Gate Source Voltage 0.5 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) (Ω) Ta=25°C Pulsed 0.4 0.5 Fig.8 Static Drain-Source On-State Resistance vs. Channel Temperature 100 VGS= 10V Pulsed FORWARD TRANSFER ADMITTANCE : |Yfs| (S) Fig.9 Forward Transfer Admittance vs. Drain Current VDS= 10V Pulsed 10 0.4 0.3 ID=20A 0.2 ID=10A 0.1 0.3 ID = 2 0 A 1 0.2 ID = 1 0 A 0.1 0.1 0.01 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0 0 5 10 15 GATE-SOURCE VOLTAGE : VGS (V) 0 -50 0 50 100 150 0.001 0.001 0.01 0.1 1 10 100 CHANNEL TEMPERATURE: Tch (°C) DRAIN CURRENT : ID (A) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.10 - Rev.A R6020ANZ 　 Data Sheet Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 100 VGS= 0V Pulsed SOURCE CURRENT : IS (A) 10 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ CAPACITANCE : C (pF) 1000 10000 Fig.11 Typical Capacitance vs. Drain-Source Voltage 10 Ciss GATE-SOURCE VOLTAGE : VGS (V) Fig.12 Dynamic Input Characteristics 1 100 Crss Coss 5 Ta= 25°C VDD= 300V ID = 2 0 A RG= 10Ω Pulsed 0 0 10 20 30 40 50 60 70 0.1 10 Ta= 25°C f= 1MHz VGS= 0V 0.01 0.1 1 10 100 1000 0.01 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : VSD (V) 1 DRAIN-SOURCE VOLTAGE : VDS (V) TOTAL GATE CHARGE : Qg (nC) Fig.13 Reverse Recovery Time vs.Reverse Drain Current 1000 REVERSE RECOVERY TIME: trr (ns) 10000 Fig.14 Switching Characteristics Ta= 25°C VDD= 300V VGS= 10V RG= 10Ω Pulsed SWITCHING TIME : t (ns) tf 1000 td(off) 100 100 Ta= 25°C di / dt= 100A / μs VGS= 0V Pulsed 10 0.1 1 10 100 10 tr 1 0.01 0.1 1 td(on) 10 100 REVERSE DRAIN CURRENT : IDR (A) DRAIN CURRENT : ID (A) Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width 10 NORMARIZED TRANSIENT THERMAL RESISTANCE : r (t) Ta = 25°C Single Pulse : 1Unit Rth（ch-a）（t） = ｒ（t）×Rth（ch-a） Rth（ch-a） = 27.3 °C/W 0.1 1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE WIDTH : Pw(s) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.10 - Rev.A R6020ANZ  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 90% 50% 10% 90% RG VDD td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS IAS VDD EAS = 1 2 L IAS 2 D.U.T. RG VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A