R6020ENZM12C8

R6020ENZ Nch 600V 20A Power MOSFET Data Sheet lOutline VDSS 600V RDS(on) (Max.) 0.196W ID 20A PD 120W TO-3PF (1) (2) lFeatures (3) lInner circuit 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 20V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple. *1 BODY DIODE 2) Fast switching speed. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging lApplication Type Switching Power Supply Tube Reel size (mm) - Tape width (mm) - Basic ordering unit (pcs) 360 Taping code C8 Marking R6020ENZ lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit VDSS 600 V Tc = 25°C ID *1 20 A Tc = 100°C ID *1 9.4 A 60 A Drain - Source voltage Continuous drain current Pulsed drain current ID,pulse *2 Gate - Source voltage VGSS 20 V Avalanche energy, single pulse EAS *3 418 mJ Avalanche energy, repetitive EAR *3 0.63 mJ Avalanche current, repetitive IAR 3.4 A Power dissipation (Tc = 25°C) PD 120 W Junction temperature Tj 150 °C Tstg -55 to +150 °C dv/dt *4 15 V/ns Range of storage temperature Reverse diode dv/dt www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/12 2014.03 - Rev.B Data Sheet R6020ENZ lAbsolute maximum ratings Parameter Symbol Drain - Source voltage slope dv/dt Conditions VDS = 480V Tj = 25°C Values Unit 50 V/ns lThermal resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal resistance, junction - case RthJC - - 1.04 °C/W Thermal resistance, junction - ambient RthJA - - 40 °C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 °C lElectrical characteristics (Ta = 25°C) Parameter Drain - Source breakdown voltage Symbol Conditions Values Unit Min. Typ. Max. 600 - - V Tj = 25°C - 0.1 100 mA Tj = 125°C - - 1000 IGSS VGS = 20V, VDS = 0V - - 100 nA VGS (th) VDS = 10V, ID = 1mA 2 - 4 V - 0.170 0.196 W Tj = 125°C - 0.360 - f = 1MHz, open drain - 5.8 - V(BR)DSS VGS = 0V, ID = 1mA VDS = 600V, VGS = 0V Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage IDSS VGS = 10V, ID = 9.5A Static drain - source on - state resistance Gate input resistance www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. RDS(on) *5 Tj = 25°C RG 2/12 W 2014.03 - Rev.B Data Sheet R6020ENZ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Transconductance gfs *5 VDS = 10V, ID = 10A 5 10 - Input capacitance Ciss VGS = 0V - 1400 - Output capacitance Coss VDS = 25V - 1200 - Reverse transfer capacitance Crss f = 1MHz - 130 - Effective output capacitance, energy related Co(er) - 56 - Effective output capacitance, time related Turn - on delay time Co(tr) td(on) *5 tr *5 Rise time Turn - off delay time td(off) *5 tf *5 Fall time VGS = 0V VDS = 0V to 480V Unit S pF pF - 266 - VDD ⋍ 480V, VGS = 10V - 35 - ID = 10A - 53 - RL = 47.5W - 150 - RG = 10W - 67 - ns lGate Charge characteristics (Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Total gate charge Qg *5 VDD ⋍ 480V - 60 - Gate - Source charge Qgs *5 ID = 20A - 8 - Gate - Drain charge Qgd *5 VGS = 10V - 33 - Gate plateau voltage V(plateau) VDD ⋍ 480V, ID = 20A - 6.9 - Unit nC V *1 Limited only by maximum temperature allowed. *2 PW  10ms, Duty cycle  1% *3 ID = 3.4A, VDD = 50V *4 Reference measurement circuits Fig.5-1. *5 Pulsed www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 3/12 2014.03 - Rev.B Data Sheet R6020ENZ lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Inverse diode continuous, forward current Values Conditions IS *1 Unit Min. Typ. Max. - - 20 A - - 60 A - - 1.5 V - 550 - ns - 10.4 - mC - 38 - A Tc = 25°C Inverse diode direct current, pulsed ISM *2 Forward voltage VSD *5 Reverse recovery time trr *5 Reverse recovery charge Qrr *5 Peak reverse recovery current Irrm *5 VGS = 0V, IS = 10A IS = 20A di/dt = 100A/ms lTypical Transient Thermal Characteristics Symbol Value Rth1 0.129 Rth2 0.627 Rth3 1.22 www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. Unit K/W 4/12 Symbol Value Unit Cth1 0.00475 Cth2 0.0387 Cth3 1.06 Ws/K 2014.03 - Rev.B Data Sheet R6020ENZ lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 100 100 Drain Current : ID [A] Power Dissipation : PD/PD max. [%] 120 80 60 40 10 PW = 100ms 1 PW = 1ms Operation in this area is limited by RDS(on) 0.1 20 0 Ta=25ºC Single Pulse 0 50 100 150 0.01 200 0.1 1 10 100 1000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [°C] Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width Fig.4 Avalanche Energy Derating Curve vs Junction Temperature 1000 120 100 10 Ta = 25ºC Single Pulse Rth(ch-a)(t) = ｒ(t)×Rth(ch-a) Rth(ch-a) = 40ºC/W 1 0.1 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 0.01 0.001 0.0001 0.00010.001 0.01 0.1 1 10 Avalanche Energy : EAS / EAS max. [%] Normalized Transient Thermal Resistance : r(t) PW = 10ms 100 1000 Pulse Width : PW [s] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 100 80 60 40 20 0 0 25 50 75 100 125 150 175 Junction Temperature : Tj [ºC] 5/12 2014.03 - Rev.B Data Sheet R6020ENZ lElectrical characteristic curves Fig.5 Typical Output Characteristics(I) Ta=25ºC Pulsed 18 Drain Current : ID [A] 16 20 VGS= 10.0V VGS= 8.0V VGS= 7.0V VGS= 6.5V 12 10 8 VGS= 5.5V 6 VGS= 5.0V 4 2 14 12 VGS= 5.0V 10 8 6 VGS= 4.5V 4 Ta=25ºC Pulsed 2 VGS= 4.5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 Drain - Source Voltage : VDS [V] Drain Current : ID [A] 8 6 4 20 VGS= 10.0V VGS= 8.0V VGS= 7.0V 18 16 VGS= 5.0V VGS= 4.5V VGS= 6.0V VGS= 6.5V 14 12 VGS= 5.5V 10 8 VGS= 5.0V 6 4 2 0 10 15 20 25 30 35 40 45 50 Fig.8 Tj = 150°C Typical Output Characteristics(II) Drain Current : ID [A] VGS= 10.0V VGS= 8.0V VGS= 7.0V VGS= 6.5V VGS= 6.0V VGS= 5.5V 5 Drain - Source Voltage : VDS [V] Fig.7 Tj = 150°C Typical Output Characteristics(I) 10 VGS= 5.5V VGS= 10.0V VGS= 8.0V VGS= 7.0V VGS= 6.5V 16 VGS= 6.0V 14 0 VGS= 6.0V 18 Drain Current : ID [A] 20 Fig.6 Typical Output Characteristics(II) Ta=150ºC Pulsed 0 1 2 3 4 0 5 Drain - Source Voltage : VDS [V] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. VGS= 4.5V Ta=150ºC Pulsed 2 0 10 20 30 40 50 Drain - Source Voltage : VDS [V] 6/12 2014.03 - Rev.B Data Sheet R6020ENZ Fig.9 Breakdown Voltage vs. Junction Temperature Fig.10 Typical Transfer Characteristics 900 100 VDS= 10V 850 10 800 Drain Current : ID [A] Drain - Source Breakdown Voltage : V(BR)DSS [V] lElectrical characteristic curves 750 700 650 600 1 0.1 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.01 550 500 -50 -25 0 25 50 75 0.001 100 125 150 0 Junction Temperature : Tj [°C] Fig.11 Gate Threshold Voltage vs. Junction Temperature 6 8 10 Fig.12 Transconductance vs. Drain Current 100 VDS= 10V VDS= 10V ID= 1mA Transconductance : gfs [S] Gate Threshold Voltage : VGS(th) [V] 4 Gate - Source Voltage : VGS [V] 4.0 3.5 3.0 2.5 2.0 2 -50 -25 0 25 50 75 1 Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC 0.1 0.01 0.01 100 125 150 Junction Temperature : Tj [°C] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 10 0.1 1 10 100 Drain Current : ID [A] 7/12 2014.03 - Rev.B Data Sheet R6020ENZ lElectrical characteristic curves 500 Ta=25ºC 450 400 350 ID = 9.5A 300 ID = 20A 250 200 150 100 50 0 0 5 10 15 Fig.14 Static Drain - Source On - State Resistance vs. Junction Temperature Static Drain - Source On-State Resistance : RDS(on) [mW] Static Drain - Source On-State Resistance : RDS(on) [mW] Fig.13 Static Drain - Source On - State Resistance vs. Gate Source Voltage 20 500 VGS= 10V ID = 9.5A 450 400 350 300 250 200 150 100 50 0 -50 -25 Gate - Source Voltage : VGS [V] 10000 50 75 100 125 150 Fig.16 Static Drain - Source On - State Resistance vs. Drain Current 10000 Static Drain - Source On-State Resistance : RDS(on) [mW] Static Drain - Source On-State Resistance : RDS(on) [mW] 25 Junction Temperature : Tj [ºC] Fig.15 Static Drain - Source On - State Resistance vs. Drain Current Ta=25ºC 1000 VGS= 10V 100 10 0 0.01 0.1 1 10 100 Drain Current : ID [A] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. VGS= 10V 1000 100 10 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.01 0.1 1 10 100 Drain Current : ID [A] 8/12 2014.03 - Rev.B Data Sheet R6020ENZ lElectrical characteristic curves Fig.17 Typical Capacitance vs. Drain - Source Voltage Fig.18 Coss Stored Energy 100000 Coss Stored Energy : EOSS [uJ] 10 Capacitance : C [pF] 10000 Ciss 1000 Coss 100 1 Crss Ta=25ºC f = 1MHz VGS = 0V 10 0.01 0.1 1 10 100 Ta=25ºC 8 6 4 2 0 1000 0 Drain - Source Voltage : VDS [V] 200 400 600 Drain - Source Voltage : VDS [V] Fig.20 Dynamic Input Characteristics 100000 20 Ta = 25ºC VDD = 480V VGS = 10V RG= 10W 10000 1000 td(off) 100 td(on) 10 1 Gate - Source Voltage : VGS [V] Switching Time : t [ns] Fig.19 Switching Characteristics tf tr 0.01 0.1 1 10 16 14 12 10 8 6 4 Ta = 25ºC VDD= 480V ID= 20A 2 0 100 0 20 40 60 80 100 120 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 18 9/12 2014.03 - Rev.B Data Sheet R6020ENZ lElectrical characteristic curves Fig.22 Reverse Recovery Time vs.Inverse Diode Forward Current 100 10000 VGS=0V Reverse Recovery Time : trr [ns] Inverse Diode Forward Current : IS [A] Fig.21 Inverse Diode Forward Current vs. Source - Drain Voltage 10 1 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.1 0.01 0.0 0.5 1.0 100 Ta=25ºC di / dt = 100A / ms VGS = 0V 10 1.5 Source - Drain Voltage : VSD [V] www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1000 0.1 1 10 100 Inverse Diode Forward Current : IS [A] 10/12 2014.03 - Rev.B Data Sheet R6020ENZ lMeasurement circuits Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 11/12 2014.03 - Rev.B Data Sheet R6020ENZ lDimensions (Unit : mm) E D TO-3PF E1 A A A1 A2 A4 F φp Q L b1 x A c b e DIM A A1 A2 A4 b b1 c D E e E1 F L p Q x MILIMETERS MIN MAX 26.30 26.70 2.30 2.70 26.30 26.70 9.80 10.20 0.65 0.95 1.80 2.20 0.80 1.10 15.30 15.70 5.30 5.70 5.45 2.80 3.20 4.30 4.70 14.60 15.00 3.40 3.80 3.10 3.50 0.50 INCHES MIN 1.035 0.091 1.035 0.386 0.026 0.071 0.031 0.602 0.209 0.215 0.110 0.169 0.575 0.134 0.122 - MAX 1.051 0.106 1.051 0.402 0.037 0.087 0.043 0.618 0.224 0.126 0.185 0.591 0.150 0.138 0.020 Dimension in mm / inches www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 12/12 2014.03 - Rev.B Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. R1102A