R6020FNX

Data Sheet 10V Drive Nch MOSFET R6020FNX  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 2) Low on-resistance. 3) Fast switching speed. 4) Gate-source voltage 　 VGSS garanteed to be ±30V . 5) Drive circuits can be simple. 6) Parallel use is easy. 14.0 2.5 Features 1) Fast reverse recovery time (trr) (1) Gate (2) Drain (3) Source 15.0 12.0 8.0 1.3 1.2 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6 Application Switching Inner circuit Packaging specifications Type R6020FNX Package Basic ordering unit (pieces) Bulk 500  (1) Gate (2) Drain (3) Source (1) (2) ∗1 (3) 1 BODY DIODE Absolute maximum ratings (Ta  25°C) Parameter Symbol Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche Current Avalanche Energy Power dissipation (Tc=25C) Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L≒ 500μH, VDD=50V, RG=25Ω, starting Tch=25°C *3 Limited only by maximum temperature allowed. Limits 600 30 Unit V V A A A A A mJ W C C VDSS VGSS Continuous Pulsed Continuous Pulsed ID IDP IS ISP IAS EAS PD Tch Tstg *3 *1 *3 *1 *2 *2 20 80 20 80 10 26.7 50 150 55 to 150  Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) Limits 2.5 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.10 - Rev.A R6020FNX  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) RDS (on) * l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 600 3.0 7.0 Typ. 0.19 2040 1660 70 50 70 170 40 65 15 25 Max. 100 100 5.0 0.25 Unit nA V uA V  S pF pF pF ns ns ns ns nC nC nC Conditions VGS=±30V, VDS=0V ID=1mA, VGS=0V VDS=600V, VGS=0V VDS=10V, ID=1mA ID=10A, VGS=10V ID=10A, VDS=10V VDS=25V VGS=0V f=1MHz ID=10A, VDD 300V VGS=10V RL=30 RG=10 ID=20A VDD 300V VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage Reverse Recovery Time *Pulsed Symbol VSD * trr * Min. 75 Typ. 105 Max. 1.5 135 Unit V ns Conditions IS=20A, VGS=0V IS=20A, di/dt=100A/ s www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.10 - Rev.A R6020FNX Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 5 Ta=25℃ pulsed 4 VGS=10.0V VGS=8.0V VGS=7.0V Drain Current : ID [A] 3 VGS=6.0V 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 30 Ta=25℃ pulsed 25 VGS=10.0V VGS=8.0V VGS=7.0V Drain Current : ID [A] VGS=6.5V 20 VGS=6.5V 15 2 VGS=5.5V 10 VGS=6.0V 5 VGS=5.0V 0 VGS=5.5V 1 VGS=5.0V 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics 100 VDS=10V pulsed 10 6 Fig.4 Gate Threshold Voltage vs. Channel Temperature VDS=10V ID=1mA pulsed Gate Threshold Voltage : VGS(th) [V] 5 Drain Currnt : ID [A] 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 4 0.1 3 0.01 0.001 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 Gate-Source Voltage : VGS [V] 2 -50 0 50 100 150 Channel Temperature : Tch [℃] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1 Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 0.6 Static Drain-Source On-State Resistance : RDS(on) [Ω] VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [Ω] Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ VGS=10V pulsed 0.5 0.4 ID=20A 0.3 ID=10A 0.2 0.1 0.1 0.01 0 0.1 1 Drain Current : ID [A] 10 100 -50 -25 0 25 50 75 100 125 150 Channel Temperature : Tch [℃] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.10 - Rev.A R6020FNX 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 100 VDS=10V pulsed 100 Fig.8 Source Current vs. Source-Drain Voltage VGS=0V pulsed Forward Transfer Admittance Yfs [S] 10 Source Current : IS [A] 10 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 1 Ta=125℃ Ta= 75℃ Ta= 25℃ Ta= -25℃ 0.1 0.1 0.01 0.01 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 Drain Current : ID [A] Source-Drain Voltage : VSD [V] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 1.0 0.9 Static Drain-Source On-State Resistance RDS(on) [Ω] 0.8 1000 Switching Time : t [ns] 0.7 0.6 0.5 ID=10A 0.4 0.3 10 0.2 0.1 0.0 0 2 4 6 8 10 12 14 16 18 20 Gate-Source Voltage : VGS [V] 1 0.01 ID=20A Ta=25℃ pulsed 10000 Fig.10 Switching Characteristics VDD≒300V VGS=10V RG=10Ω Ta=25℃ Pulsed td(off) 100 tf td(on) tr 0.1 1 Drain Current : ID [A] 10 100 Fig.11 Dynamic Input Characteristics 12 Ta=25℃ VDD=300V ID=20A Pulsed Capacitance : C [pF] 100000 Fig.12 Typical Capacitance vs. Drain-Source Voltage 10 Gate-Source Voltage : VGS [V] 10000 Ta=25℃ f=1MHz VGS=0V 8 1000 Ciss 6 100 Coss 4 10 2 Crss 0 0 10 20 30 40 50 60 70 80 90 Total Gate Charge : Qg [nC] 1 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.10 - Rev.A R6020FNX 　 Data Sheet Fig.13 Normalized Transient Thermal Resistance v.s. Pulse Width 10 Normalized Transient Thermal Resistance : r（t） Ta=25℃ Single Pulse 1 Rth(ch-a)=45.7℃/W Rth(ch-a)(t)=r(t)×Rth(ch-a) Drain Current : ID [ A ] 10 100 Fig.14 Maximum Safe Operating Area Operation in this area is limited by RDS(on) (VGS = 10V) PW = 100μs 0.1 1 PW = 1ms 0.01 0.1 PW = 10ms Ta=25℃ Single Pulse 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 1000 Pulse width : Pw (s) Drain-Source Voltage : VDS [ V ] Fig.15 Reverse Recovery Time vs. Source Current 1000 Ta=25℃ VGS=0V di/dt=100A/μs Pulsed Reverse Recovery Time : trr [ns] 100 10 0 1 10 100 Source Current : IS [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.10 - Rev.A R6020FNX  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) RG D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS D.U.T. RG IAS VDD EAS = 1 2 L IAS 2 VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A