R6046ANZ

Data Sheet 10V Drive Nch MOSFET R6046ANZ  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-3PF 4.5 5.5 15.5 φ3.6 10.0 3.0 0.75  Application Switching (1) Gate (2) Drain (3) Source 14.8 (1) (2) 2.5 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 26.5 16.5 14.5 0.44 16.5 3.5 2.0 2.0 3.0 2.0 (3) 0.9 5.45 5.45  Packaging specifications Type R6046ANZ Package Code Basic ordering unit (pieces) Bulk 360   Inner circuit ∗1  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25°C (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE Limits 600 30 46 115 46 115 23 142 120 150 55 to 150 Unit V V A A A A A mJ W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID *3 IDP *1 IS ISP *3 *1 IAS *2 EAS *2 PD Tch Tstg *4 *3 Limited only by maximum channel temperature allowed. *4 TC=25°C  Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) Limits 1.04 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.10 - Rev.A R6046ANZ  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 600 2.5 19 Typ. 65 33 6000 3900 90 60 130 230 100 150 35 55 Max. 100 100 4.5 81 Unit nA V A V Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=600V, VGS=0V VDS=10V, ID=1mA Data Sheet Drain-source breakdown voltage V(BR)DSS m ID=23A, VGS=10V S pF pF pF ns ns ns ns nC nC nC VDS=10V, ID=23A VDS=25V VGS=0V f=1MHz VDD 300V, ID=23A VGS=10V RL=13.0 RG=10 VDD 300V ID=46A VGS=10V Body diode characteristics (Source-Drain) Parameter Forward voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Unit V Conditions IS=46A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A R6046ANZ Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 10 9 8 Drain Current : ID [A] 7 6 5 4 3 VGS=4.5V 2 1 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VGS=10.0V VGS=8.0V VGS=7.0V VGS=6.5V VGS=6.0V Ta=25°C pulsed VGS=5.0V 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 45 40 35 Drain Current : ID [A] 30 25 20 15 10 5 VGS=4.5V 0 0 1 2 3 4 5 6 7 8 9 10 VGS=5.0V Ta=25°C pulsed VGS=6.0V VGS=10.0V VGS=8.0V VGS=7.0V VGS=6.5V Drain-Source Voltage : VDS [V] Drain-Source Voltage : VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Static Drain-Source On-State Resistance RDS(on) [mW ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.4 Static Drain-Source On-State Resistance vs. Channel Temperature 160 VGS=10V pulsed 140 120 100 ID=46.0A 80 ID=23.0A 60 100 40 10 0.01 20 0.1 1 Drain Current : ID [A] 10 100 -50 -25 0 25 50 75 100 125 150 Channel Temperature : T ch [℃] Fig.5 Typical Transfer Characteristics 100 VDS=10V pulsed Gate Threshold Voltage : VGS(th) [V] 10 Drain Currnt : ID [A] 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.001 0.0 2.0 4.0 6.0 8.0 Gate-Source Voltage : VGS [V] 0.0 -50 Fig.6 Gate Threshold Voltage vs. Channel Temperature VDS=10V ID=1mA pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.01 0 50 100 150 Channel Temperature : T ch [℃] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.10 - Rev.A R6046ANZ 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 1000 VDS=10V pulsed 100 Forward Transfer Admittance Yfs [S] 10 Source Current : IS [A] 100 Fig.8 Source Current vs. Source-Drain Voltage VGS=0V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 1 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.1 0.01 0.01 0.01 0.1 1 Drain Current : ID [A] 10 100 0.0 0.5 1.0 1.5 Source-Drain Voltage : VSD [V] Fig.9 Switching Characteristics 1000000 VDD≒300V VGS=10V RG=10Ω Ta=25°C Pulsed 10 Fig.10 Dynamic Input Characteristics 100000 10000 Gate-Source Voltage : VGS [V] 8 Ta=25°C VDD=300V ID=46A Pulsed Switching Time : t [ns] 6 1000 td(off) 4 100 tf td(on) 10 tr 2 1 0.01 0.1 1 Drain Current : ID [A] 10 100 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 Total Gate Charge : Qg [nC] Fig.11 Typical Capacitance vs. Drain-Source Voltage 1000000 Ta=25°C f=1MHz VGS=0V Reverse Recovery Time : trr [ns] 1000 Fig.12 Reverse Recovery Time vs. Source Current 100000 Ta=25°C Vgs=0V di/dt=100A/us Pulsed Capacitance : C [pF] 10000 Ciss 1000 Coss 100 100 10 Crss 1 0.01 0.1 1 10 100 1000 Drain-Source Voltage : VDS [V] 10 0 1 10 100 Source Current : IS [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.10 - Rev.A R6046ANZ  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS D.U.T. RG IAS VDD EAS = 1 2 L IAS 2 VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A