R6046ANZ1C9

R6046ANZ1 Nch 600V 46A Power MOSFET Datasheet lOutline 600V RDS(on) (Max.) 0.09W ID 46A PD 120W TO-247 (1) (2) lFeatures (3) or VDSS lInner circuit e N co ew m m D es en ig de ns d f 1) Low on-resistance. 3) Gate-source voltage (VGSS) guaranteed to be 30V. (1) Gate (2) Drain (3) Source 4) Drive circuits can be simple. *1 BODY DIODE 2) Fast switching speed. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging lApplication Type Switching Power Supply Tube Reel size (mm) - Tape width (mm) - Basic ordering unit (pcs) 450 Taping code C9 Marking R6046ANZ1 lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Unit VDSS 600 V Tc = 25°C ID *1 46 A Tc = 100°C ID *1 22.3 A 115 A R Drain - Source voltage N ot Continuous drain current Pulsed drain current ID,pulse *2 Gate - Source voltage VGSS 30 V Avalanche energy, single pulse EAS *3 142 mJ Avalanche energy, repetitive EAR *4 5.4 mJ Avalanche current IAR *3 23 A Power dissipation (Tc = 25°C) PD 120 W Junction temperature Tj 150 °C Tstg -55 to +150 °C dv/dt *5 15 V/ns Range of storage temperature Reverse diode dv/dt www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/13 2013.08 - Rev.A Data Sheet R6046ANZ1 lAbsolute maximum ratings Symbol Drain - Source voltage slope dv/dt Conditions VDS = 480V, ID = 46A Tj = 125°C lThermal resistance Symbol Unit 50 V/ns Values Min. Typ. Max. e N co ew m m D es en ig de ns d f Parameter Values or Parameter Unit Thermal resistance, junction - case RthJC - - 1.04 °C/W Thermal resistance, junction - ambient RthJA - - 30 °C/W Soldering temperature, wavesoldering for 10s Tsold - - 265 °C lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Unit Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA 600 - - V Drain - Source avalanche breakdown voltage V(BR)DS VGS = 0V, ID = 23A - 700 - V Tj = 25°C - 0.1 100 mA Tj = 125°C - - 1000 IGSS VGS = 30V, VDS = 0V - - 100 nA VGS (th) VDS = 10V, ID = 1mA 2.5 - 4.5 V - 0.069 0.09 W Tj = 125°C - 0.145 - f = 1MHz, open drain - 2.2 - VDS = 600V, VGS = 0V N ot R Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate input resistance www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. IDSS VGS = 10V, ID = 23A RDS(on) *6 Tj = 25°C RG 2/13 W 2013.08 - Rev.A Data Sheet R6046ANZ1 lElectrical characteristics(Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. 19 33 - gfs *6 VDS = 10V, ID = 23A Input capacitance Ciss VGS = 0V - 6000 - Output capacitance Coss VDS = 25V - 3900 - Reverse transfer capacitance Crss f = 1MHz - 83 - e N co ew m m D es en ig de ns d f Effective output capacitance, energy related Effective output capacitance, time related Turn - on delay time Rise time Turn - off delay time Fall time Co(er) Co(tr) VGS = 0V VDS = 0V to 480V - 188 pF - - 640 - VDD ⋍ 300V, VGS = 10V - 65 - tr *6 ID = 23A - 120 - td(off) *6 RL = 13W - 260 520 tf *6 RG = 10W - 100 200 td(on) *6 S or Transconductance Unit pF ns lGate Charge characteristics(Ta = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. Qg *6 VDD ⋍ 300V - 150 - Gate - Source charge Qgs *6 ID = 46A - 35 - Gate - Drain charge Qgd *6 VGS = 10V - 56 - Gate plateau voltage V(plateau) VDD ⋍ 300V, ID = 46A - 5.9 - nC V N ot R Total gate charge Unit *1 Limited only by maximum temperature allowed. *2 PW  10ms, Duty cycle  1% *3 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C *4 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C, f = 10kHz *5 Reference measurement circuits Fig.5-1. *6 Pulsed www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 3/13 2013.08 - Rev.A Data Sheet R6046ANZ1 lBody diode electrical characteristics (Source-Drain)(Ta = 25°C) Parameter Symbol Inverse diode continuous, forward current Values Conditions IS *1 Min. Typ. Max. - - 46 Unit A ISM *2 Forward voltage VSD *6 VGS = 0V, IS = 46A - 115 A - 1.5 V - 692 - ns - 15 - mC - 45 - A - 940 - A/ms - e N co ew m m D es en ig de ns d f Inverse diode direct current, pulsed or Tc = 25°C Reverse recovery time trr *6 Reverse recovery charge Qrr *6 Peak reverse recovery current Irrm *6 Peak rate of fall of reverse recovery current dirr/dt IS = 46A di/dt = 100A/ms Tj = 25°C lTypical Transient Thermal Characteristics Symbol Rth1 Rth2 Unit 0.055 0.164 K/W 0.821 Symbol Value Cth1 0.0236 Cth2 0.134 Cth3 1.09 Unit Ws/K N ot R Rth3 Value www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 4/13 2013.08 - Rev.A Data Sheet R6046ANZ1 lElectrical characteristic curves Fig.2 Maximum Safe Operating Area Fig.1 Power Dissipation Derating Curve 1000 PW = 100ms 100 80 60 40 0 50 100 150 10 1 0.01 200 Operation in this area is limited by RDS(on) (VGS = 10V) PW = 10ms Ta=25ºC Single Pulse 0.1 1 10 100 1000 Drain - Source Voltage : VDS [V] Junction Temperature : Tj [°C] Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width 1000 100 R 10 Ta = 25ºC Single Pulse Rth(ch-a)(t) = ｒ(t)×Rth(ch-a) Rth(ch-a) = 30ºC/W 1 0.1 N ot Normalized Transient Thermal Resistance : r(t) PW = 1ms 0.1 20 0 or Drain Current : ID [A] 100 e N co ew m m D es en ig de ns d f Power Dissipation : PD/PD max. [%] 120 0.01 top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width : PW [s] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 5/13 2013.08 - Rev.A Data Sheet R6046ANZ1 lElectrical characteristic curves Fig.5 Avalanche Power Losses Fig.4 Avalanche Current vs Inductive Load 12 8 6 4 Ta = 25ºC VDD = 50V, RG = 25W VGF = 10V, VGR = 0V 2 0 0.01 4500 Ta=25ºC 4000 3500 3000 e N co ew m m D es en ig de ns d f Avalanche Current : IAR [A] 10 or Avalanche Power Losses : PAR [W] 5000 0.1 1 10 2500 2000 1500 1000 500 0 1.0E+04 100 Coil Inductance : L [mH] 1.0E+05 1.0E+06 Frequency : f [Hz] 120 100 R 80 60 N ot Avalanche Energy : EAS / EAS max. [%] Fig.6 Avalanche Energy Derating Curve vs Junction Temperature 40 20 0 0 25 50 75 100 125 150 175 Junction Temperature : Tj [ºC] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 6/13 2013.08 - Rev.A Data Sheet R6046ANZ1 lElectrical characteristic curves Fig.7 Typical Output Characteristics(I) Ta=25ºC Pulsed VGS= 10.0V VGS= 8.0V VGS= 6.5V 35 25 20 VGS= 5.0V 15 10 0 20 15 10 VGS= 5.0V 5 5 VGS= 4.5V VGS= 4.5V 0 10 20 30 40 0 50 0 Drain - Source Voltage : VDS [V] 25 20 15 VGS= 5.5V VGS= 5.0V 10 0 10 20 30 40 20 4 5 VGS= 10.0V VGS= 8.0V VGS= 7.0V VGS= 6.5V VGS= 6.0V VGS= 5.5V VGS= 5.0V 15 10 VGS= 4.5V 0 50 Drain - Source Voltage : VDS [V] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 3 5 VGS= 4.5V 5 0 Ta=150ºC Pulsed 25 Ta=150ºC Pulsed R 30 30 Drain Current : ID [A] 35 N ot Drain Current : ID [A] 40 2 Fig.10 Tj = 150°C Typical Output Characteristics(II) VGS= 6.0V VGS= 10.0V VGS= 8.0V VGS= 7.0V VGS= 6.5V 1 Drain - Source Voltage : VDS [V] Fig.9 Tj = 150°C Typical Output Characteristics(I) 45 Ta=25ºC Pulsed e N co ew m m D es en ig de ns d f 30 25 VGS= 10.0V VGS= 8.0V VGS= 6.5V VGS= 6.0V or 40 Drain Current : ID [A] 30 VGS= 6.0V Drain Current : ID [A] 45 Fig.8 Typical Output Characteristics(II) 0 1 2 3 4 5 Drain - Source Voltage : VDS [V] 7/13 2013.08 - Rev.A Data Sheet R6046ANZ1 Fig.11 Breakdown Voltage vs. Junction Temperature Fig.12 Typical Transfer Characteristics 100 900 VDS= 10V Plused 850 700 650 600 550 500 Drain Current : ID [A] 750 or 10 800 1 e N co ew m m D es en ig de ns d f Drain - Source Breakdown Voltage : V(BR)DSS [V] lElectrical characteristic curves 0.1 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.01 -50 -25 0 25 50 75 0.001 100 125 150 0 1 Junction Temperature : Tj [°C] Fig.13 Gate Threshold Voltage vs. Junction Temperature VDS= 10V ID= 1mA Plused R 3 2 1 0 4 5 6 7 8 Gate - Source Voltage : VGS [V] Fig.14 Transconductance vs. Drain Current -50 -25 0 25 50 75 VDS= 10V Plused Transconductance : gfs [S] 4 3 100 N ot Gate Threshold Voltage : VGS(th) [V] 5 2 1 Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC 0.1 0.01 0.01 100 125 150 Junction Temperature : Tj [°C] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 10 0.1 1 10 100 Drain Current : ID [A] 8/13 2013.08 - Rev.A Data Sheet R6046ANZ1 lElectrical characteristic curves 150 ID = 46A 100 ID = 23A 50 0 0 0.2 VGS= 10V Plused or Ta=25ºC Pulsed Static Drain - Source On-State Resistance : RDS(on) [W] 200 Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature 0.15 e N co ew m m D es en ig de ns d f Static Drain - Source On-State Resistance : RDS(on) [mW] Fig.15 Static Drain - Source On - State Resistance vs. Gate Source Voltage 2 4 6 8 10 12 14 16 18 20 Gate - Source Voltage : VGS [V] ID = 46A 0.1 ID = 23A 0.05 0 -50 -25 0 25 50 75 100 125 150 Junction Temperature : Tj [ºC] 1 R VGS= 10V Plused 0.1 N ot Static Drain - Source On-State Resistance : RDS(on) [W] Fig.17 Static Drain - Source On - State Resistance vs. Drain Current 0.01 0.1 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 1 10 100 Drain Current : ID [A] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 9/13 2013.08 - Rev.A Data Sheet R6046ANZ1 lElectrical characteristic curves Fig.18 Typical Capacitance vs. Drain - Source Voltage Fig.19 Coss Stored Energy 45 Coss 100 10 1 Ta=25ºC f = 1MHz VGS = 0V 0.01 35 30 e N co ew m m D es en ig de ns d f Capacitance : C [pF] 1000 Ta=25ºC 40 or Ciss 10000 Coss Stored Energy : EOSS [uJ] 100000 Crss 0.1 1 10 100 25 20 15 10 5 0 1000 0 Drain - Source Voltage : VDS [V] 600 Fig.21 Dynamic Input Characteristics 10 10000 R 1000 td(off) VDD ≒ 300V VGS = 10V RG= 10W Ta = 25ºC Pulsed Gate - Source Voltage : VGS [V] 100000 tf td(on) 100 N ot Switching Time : t [ns] 400 Drain - Source Voltage : VDS [V] Fig.20 Switching Characteristics 10 1 200 tr 0.01 8 6 4 0 0.1 1 10 100 0 20 40 60 80 100 120 140 160 180 200 Total Gate Charge : Qg [nC] Drain Current : ID [A] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Ta = 25ºC VDD= 300V ID= 46A Pulsed 2 10/13 2013.08 - Rev.A Data Sheet R6046ANZ1 lElectrical characteristic curves Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current Reverse Recovery Time : trr [ns] 10 1 Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC 0.1 0.01 0.0 or 10000 VGS=0V Pulsed 1000 e N co ew m m D es en ig de ns d f Inverse Diode Forward Current : IS [A] 100 0.5 1.0 100 1 1.5 Source - Drain Voltage : VSD [V] Ta=25ºC VGS = 0V di / dt = 100A / ms Pulsed 10 0 1 10 100 N ot R Inverse Diode Forward Current : IS [A] www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 11/13 2013.08 - Rev.A Data Sheet R6046ANZ1 lMeasurement circuits Fig.1-2　Switching Waveforms e N co ew m m D es en ig de ns d f or Fig.1-1 Switching Time Measurement Circuit Fig.2-2 Gate Charge Waveform Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform N ot R Fig.2-1 Gate Charge Measurement Circuit Fig.5-1 di/dt Measurement Circuit www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. Fig.5-2 di/dt Waveform 12/13 2013.08 - Rev.A Data Sheet R6046ANZ1 lDimensions (Unit : mm) e N co ew m m D es en ig de ns d f or TO-247 DIM N ot R A A1 A2 b b1 b2 c D D1 E e N L L1 ΦP Q S MILIMETERS MIN MAX 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.20 2.92 3.20 0.61 0.80 20.80 21.34 17.43 17.83 15.75 16.13 5.45 3.00 19.81 20.57 3.81 4.32 3.55 3.65 5.59 6.20 6.15 INCHES MIN 0.190 0.090 0.075 0.045 0.075 0.115 0.024 0.819 0.686 0.620 MAX 0.205 0.100 0.085 0.055 0.087 0.126 0.031 0.840 0.702 0.635 0.215 3.000 0.780 0.150 0.140 0.220 0.810 0.170 0.144 0.244 0.240 Dimension in mm / inches www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 13/13 2013.08 - Rev.A Notice Notes 1) The information contained herein is subject to change without notice. or 2) Before you use our Products, please contact our sales representative and verify the latest specifications : e N co ew m m D es en ig de ns d f 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. 7) The Products specified in this document are not designed to be radiation tolerant. 8) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 9) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 11) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. R 12) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. N ot 13) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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