R8008ANX

Data Sheet 10V Drive Nch MOSFET R8008ANX  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TO-220FM 10.0 φ3.2 4.5 2.8 Features 1) Low on-resistance. 2) Low input capacitance. 3) High ESD. 15.0 12.0 8.0 (1) Gate (2) Drain (3) Source 14.0 2.5 1.3 1.2 0.8 2.54 (1) (2) (3) 2.54 0.75 2.6  Application Switching  Packaging specifications Type R8008ANX Package Code Basic ordering unit (pieces) Bulk 500   Inner circuit ∗1  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Avalanche current Avalanche energy Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 L 500H, VDD=50V, RG=25 , T ch=25°C (1) Gate (2) Drain (3) Source (1) (2) (3) 1 BODY DIODE Limits 800 30 8 32 8 32 4 4.2 50 150 55 to 150 Unit V V A A A A A mJ W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID *3 IDP IS ISP AS *1 *3 *1 IAS *2 E *2 PD *4 Tch Tstg *3 Limited only by maximum channel temperature allowed. *4 TC=25°C  Thermal resistance Parameter Channel to Case Symbol Rth (ch-c) Limits 2.5 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/5 2011.10 - Rev.A R8008ANX  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) RDS (on) * l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * Min. 800 3.0 2.0 Typ. 0.79 1080 480 32 32 50 85 30 39 8.7 23 Max. 100 100 5.0 1.03 Unit nA V A V  S pF pF pF ns ns ns ns nC nC nC Conditions VGS=30V, VDS=0V ID=1mA, VGS=0V VDS=800V, VGS=0V VDS=10V, ID=1mA ID=4.0A, VGS=10V VDS=10V, ID=4.0A VDS=25V VGS=0V f=1MHz VDD 400V, ID=4.0A VGS=10V RL=100 RG=10 VDD 400V ID=8.0A VGS=10V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.5 Conditions Unit V IS=8.0A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/5 2011.10 - Rev.A R8008ANX Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 2 Ta=25°C pulsed 　 Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 8 Ta=25°C pulsed VGS=10.0V 6 VGS=10.0V Drain Current : ID [A] VGS=8.0V VGS=7.0V 1 VGS=6.5V VGS=6.0V Drain Current : ID [A] VGS=8.0V 4 VGS=7.0V VGS=6.5V VGS=6.0V VGS=5.5V 0 2 VGS=5.5V VGS=5.0V 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : VDS [V] 0 2 4 6 8 10 Drain-Source Voltage : VDS [V] Fig.3 Typical Transfer Characteristics 10 VDS=10V pulsed 6 Fig.4 Gate Threshold Voltage vs. Channel Temperature VDS=10V ID=1mA pulsed Gate Threshold Voltage : VGS(th) [V] 4 5 6 7 8 5 1 Drain Currnt : ID [A] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 4 0.01 3 0.001 2 3 Gate-Source Voltage : VGS [V] 2 -50 0 50 100 150 Channel Temperature : T ch [℃] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 10 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Fig.6 Static Drain-Source On-State Resistance vs. Channel Temperature 2.5 Static Drain-Source On-State Resistance : RDS(on) [Ω] VGS=10V pulsed Static Drain-Source On-State Resistance RDS(on) [Ω] VGS=10V pulsed 2 1.5 ID=8A 1 1 ID=4A 0.5 0.1 0.01 0 0.1 1 10 -50 0 50 100 150 Drain Current : ID [A] Channel Temperature : T ch [℃] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/5 2011.10 - Rev.A R8008ANX 　 Data Sheet Fig.7 Forward Transfer Admittance vs. Drain Current 10 VDS=10V pulsed 10 Fig.8 Source Current vs. Source-Drain Voltage VGS=0V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Forward Transfer Admittance Yfs [S] 1 Source Current : Is [A] 1 10 1 0.1 0.01 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.001 0.001 0.01 0.01 0.1 Drain Current : ID [A] 0 0.5 1 1.5 Source-Drain Voltage : VSD [V] Fig.9 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 3 Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [Ω] 2 ID=8.0A 1 ID=4.0A 0 0 5 10 15 20 Gate-Source Voltage : VGS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/5 2011.10 - Rev.A R8008ANX  Measurement circuits 　 Data Sheet Pulse width VGS ID RL D.U.T. RG VDD VDS VGS VDS 50% 10% 10% 90% td(on) ton tr 90% 50% 10% 90% td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG VGS ID RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform VGS IAS L VDS V(BR)DSS D.U.T. RG IAS VDD EAS = 1 2 L IAS 2 VDD V(BR)DSS V(BR)DSS - VDD Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/5 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A