R8010ANX
Nch 800V 10A Power MOSFET
Datasheet
lOutline
800V
RDS(on) (Max.)
0.56W
ID
10A
PD
40W
TO-220FM
(1) (2)
lFeatures
(3)
or
VDSS
lInner circuit
e
N co
ew m
m
D
es en
ig de
ns d
f
1) Low on-resistance.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
(1) Gate
(2) Drain
(3) Source
4) Drive circuits can be simple.
*1 BODY DIODE
2) Fast switching speed.
5) Parallel use is easy.
6) Pb-free lead plating ; RoHS compliant
lPackaging specifications
Packaging
lApplication
Type
Switching Power Supply
Bulk
Reel size (mm)
-
Tape width (mm)
-
Basic ordering unit (pcs)
Taping code
Marking
500
R8010ANX
lAbsolute maximum ratings(Ta = 25°C)
Parameter
Symbol
Value
Unit
VDSS
800
V
Tc = 25°C
ID *1
10
A
Tc = 100°C
ID *1
4.6
A
40
A
R
Drain - Source voltage
N
ot
Continuous drain current
Pulsed drain current
ID,pulse
*2
Gate - Source voltage
VGSS
30
V
Avalanche energy, single pulse
EAS *3
6.63
mJ
Avalanche energy, repetitive
EAR *4
2.7
mJ
Avalanche current
IAR *3
5
A
Power dissipation (Tc = 25°C)
PD
40
W
Junction temperature
Tj
150
°C
Tstg
-55 to +150
°C
dv/dt *5
15
V/ns
Range of storage temperature
Reverse diode dv/dt
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1/13
2013.04 - Rev.A
Data Sheet
R8010ANX
lAbsolute maximum ratings
Symbol
Drain - Source voltage slope
dv/dt
Conditions
VDS = 640V, ID = 10A
Tj = 125°C
lThermal resistance
Symbol
Unit
50
V/ns
Values
Min.
Typ.
Max.
e
N co
ew m
m
D
es en
ig de
ns d
f
Parameter
Values
or
Parameter
Unit
Thermal resistance, junction - case
RthJC
-
-
3.13
°C/W
Thermal resistance, junction - ambient
RthJA
-
-
70
°C/W
Soldering temperature, wavesoldering for 10s
Tsold
-
-
265
°C
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
800
-
-
V
-
900
-
V
Tj = 25°C
-
0.1
100
mA
Tj = 125°C
-
-
1000
IGSS
VGS = 30V, VDS = 0V
-
-
100
nA
VGS (th)
VDS = 10V, ID = 1mA
3
-
5
V
-
0.43
0.56
W
Tj = 125°C
-
0.95
-
f = 1MHz, open drain
-
12.8
-
Drain - Source breakdown
voltage
V(BR)DSS
VGS = 0V, ID = 1mA
Drain - Source avalanche
breakdown voltage
V(BR)DS
VGS = 0V, ID = 5A
VDS = 800V, VGS = 0V
N
ot
R
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate input resistance
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
IDSS
VGS = 10V, ID = 5A
RDS(on) *6 Tj = 25°C
RG
2/13
W
2013.04 - Rev.A
Data Sheet
R8010ANX
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
2.2
5.5
-
gfs *6
VDS = 10V, ID = 5.0A
Input capacitance
Ciss
VGS = 0V
-
1750
-
Output capacitance
Coss
VDS = 25V
-
830
-
Reverse transfer capacitance
Crss
f = 1MHz
-
50
-
e
N co
ew m
m
D
es en
ig de
ns d
f
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn - on delay time
Rise time
Co(tr)
VGS = 0V
VDS = 0V to 640V
-
48.0
129
-
VDD ⋍ 400V, VGS = 10V
-
43
-
ID = 5A
-
54
-
td(off) *6
RL = 100W
-
97
194
tf *6
RG = 10W
-
25
50
td(on) *6
pF
-
-
tr *6
Turn - off delay time
Fall time
Co(er)
S
or
Transconductance
Unit
pF
ns
lGate Charge characteristics(Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min.
Typ.
Max.
Qg *6
VDD ⋍ 400V
-
62
-
Gate - Source charge
Qgs *6
ID = 10A
-
17
-
Gate - Drain charge
Qgd *6
VGS = 10V
-
26
-
Gate plateau voltage
V(plateau)
VDD ⋍ 400V, ID = 10A
-
7.5
-
nC
V
N
ot
R
Total gate charge
Unit
*1 Limited only by maximum temperature allowed.
*2 PW 10ms, Duty cycle 1%
*3 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C
*4 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C, f = 10kHz
*5 Reference measurement circuits Fig.5-1.
*6 Pulsed
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
3/13
2013.04 - Rev.A
Data Sheet
R8010ANX
lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)
Parameter
Symbol
Inverse diode continuous,
forward current
Values
Conditions
IS *1
Min.
Typ.
Max.
-
-
10
Unit
A
ISM *2
Forward voltage
VSD *6
VGS = 0V, IS = 10A
-
40
A
-
1.5
V
-
595
-
ns
-
9.2
-
mC
-
30.8
-
A
-
170
-
A/ms
-
e
N co
ew m
m
D
es en
ig de
ns d
f
Inverse diode direct current,
pulsed
or
Tc = 25°C
Reverse recovery time
trr *6
Reverse recovery charge
Qrr *6
Peak reverse recovery current
Irrm *6
Peak rate of fall of reverse
recovery current
dirr/dt
IS = 10A
di/dt = 100A/ms
Tj = 25°C
lTypical Transient Thermal Characteristics
Symbol
Rth1
Rth2
Unit
0.0922
0.607
K/W
2.14
Symbol
Value
Cth1
0.00393
Cth2
0.0547
Cth3
0.53
Unit
Ws/K
N
ot
R
Rth3
Value
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
4/13
2013.04 - Rev.A
Data Sheet
R8010ANX
lElectrical characteristic curves
Fig.2 Maximum Safe Operating Area
Fig.1 Power Dissipation Derating Curve
100
80
60
40
20
0
0
50
100
150
10
PW = 100ms
PW = 1ms
1
PW = 10ms
Operation in this area
is limited by RDS(on)
(VGS = 10V)
0.1
0.01
200
Ta=25ºC
Single Pulse
0.1
1
10
100
1000
Drain - Source Voltage : VDS [V]
Junction Temperature : Tj [°C]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
1000
100
R
10
Ta = 25ºC
Single Pulse
Rth(ch-a)(t) = ｒ(t)×Rth(ch-a)
Rth(ch-a) = 70ºC/W
1
0.1
N
ot
Normalized Transient Thermal Resistance : r(t)
or
Drain Current : ID [A]
100
e
N co
ew m
m
D
es en
ig de
ns d
f
Power Dissipation : PD/PD max. [%]
120
0.01
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
0.001
0.0001
0.0001 0.001 0.01
0.1
1
10
100
1000
Pulse Width : PW [s]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
5/13
2013.04 - Rev.A
Data Sheet
R8010ANX
lElectrical characteristic curves
Fig.5 Avalanche Power Losses
Fig.4 Avalanche Current vs Inductive Load
6
5000
3
2
1
0
0.01
Ta=25ºC
4000
3500
3000
or
4
4500
e
N co
ew m
m
D
es en
ig de
ns d
f
Avalanche Current : IAR [A]
Avalanche Power Losses : PAR [W]
Ta = 25ºC
VDD = 50V, RG = 25W
VGF = 10V, VGR = 0V
5
0.1
1
10
2500
2000
1500
1000
500
0
1.0E+04
100
Coil Inductance : L [mH]
1.0E+05
1.0E+06
Frequency : f [Hz]
120
100
R
80
60
N
ot
Avalanche Energy : EAS / EAS max. [%]
Fig.6 Avalanche Energy Derating Curve
vs Junction Temperature
40
20
0
0
25
50
75
100
125
150
175
Junction Temperature : Tj [ºC]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
6/13
2013.04 - Rev.A
Data Sheet
R8010ANX
lElectrical characteristic curves
Fig.7 Typical Output Characteristics(I)
Ta=25ºC
VGS= 6.5V Pulsed
VGS= 8.0V
VGS= 7.0V
6
4
VGS= 10.0V
VGS= 9.0V
VGS= 8.0V
4
VGS= 6.0V
VGS= 7.0V
VGS= 6.5V
Ta=25ºC
Pulsed
VGS= 6.0V
3
e
N co
ew m
m
D
es en
ig de
ns d
f
Drain Current : ID [A]
8
5
or
VGS= 10.0V
VGS= 9.0V
Drain Current : ID [A]
10
Fig.8 Typical Output Characteristics(II)
2
1
2
VGS= 5.0V
VGS= 5.0V
0
0
10
20
30
40
0
50
0
Drain - Source Voltage : VDS [V]
VGS= 10.0V
VGS= 7.0V
VGS= 6.5V
VGS= 6.0V
0
10
VGS= 4.5V
20
30
VGS= 7.0V
2
VGS= 6.5V
VGS= 6.0V
VGS= 5.5V
1
VGS= 5.0V
VGS= 5.0V
40
VGS= 4.5V
0
50
Drain - Source Voltage : VDS [V]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
5
VGS= 10.0V
VGS= 8.0V
VGS= 5.5V
2
0
Ta=150ºC
Pulsed
Drain Current : ID [A]
4
4
3
VGS= 8.0V
R
6
3
Fig.10 Tj = 150°C Typical Output
Characteristics(II)
Ta=150ºC
Pulsed
N
ot
Drain Current : ID [A]
8
2
Drain - Source Voltage : VDS [V]
Fig.9 Tj = 150°C Typical Output
Characteristics(I)
10
1
0
1
2
3
4
5
Drain - Source Voltage : VDS [V]
7/13
2013.04 - Rev.A
Data Sheet
R8010ANX
Fig.11 Breakdown Voltage
vs. Junction Temperature
Fig.12 Typical Transfer Characteristics
1100
100
VDS= 10V
Plused
1050
Drain Current : ID [A]
950
900
850
800
750
700
or
10
1000
1
e
N co
ew m
m
D
es en
ig de
ns d
f
Drain - Source Breakdown Voltage : V(BR)DSS [V]
lElectrical characteristic curves
0.1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.01
-50 -25
0
25
50
75
0.001
100 125 150
0
Junction Temperature : Tj [°C]
Fig.13 Gate Threshold Voltage
vs. Junction Temperature
2
0
4
5
6
7
8
9
10
Gate - Source Voltage : VGS [V]
Fig.14 Transconductance vs. Drain Current
Transconductance : gfs [S]
4
3
VDS= 10V
Plused
VDS= 10V
ID= 1mA
Plused
R
6
2
10
N
ot
Gate Threshold Voltage : VGS(th) [V]
8
1
-50 -25
0
25
50
75
Ta= -25ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0.1
0.01
0.01
100 125 150
Junction Temperature : Tj [°C]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
1
0.1
1
10
100
Drain Current : ID [A]
8/13
2013.04 - Rev.A
Data Sheet
R8010ANX
lElectrical characteristic curves
0.8
ID = 5A
0.6
ID = 10A
0.4
0.2
0.0
0
1.5
VGS= 10V
Plused
or
Ta=25ºC
Pulsed
Static Drain - Source On-State Resistance
: RDS(on) [W]
1.0
Fig.16 Static Drain - Source On - State
Resistance vs. Junction Temperature
1
e
N co
ew m
m
D
es en
ig de
ns d
f
Static Drain - Source On-State Resistance
: RDS(on) [W]
Fig.15 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
2
4
6
8
10 12 14 16 18 20
Gate - Source Voltage : VGS [V]
ID = 10A
0.5
0
ID = 5A
-50 -25
0
25
50
75
100 125 150
Junction Temperature : Tj [ºC]
10
VGS= 10V
Plused
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
R
1
N
ot
Static Drain - Source On-State Resistance
: RDS(on) [W]
Fig.17 Static Drain - Source On - State
Resistance vs. Drain Current
0.1
0.01
0.1
1
10
100
Drain Current : ID [A]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
9/13
2013.04 - Rev.A
Data Sheet
R8010ANX
lElectrical characteristic curves
Fig.18 Typical Capacitance
vs. Drain - Source Voltage
Fig.19 Coss Stored Energy
18
Coss
100
10
1
Ta=25ºC
f = 1MHz
VGS = 0V
0.01
or
1000
Ta=25ºC
16
14
12
e
N co
ew m
m
D
es en
ig de
ns d
f
Capacitance : C [pF]
Ciss
Coss Stored Energy : EOSS [uJ]
10000
Crss
0.1
1
10
100
10
8
6
4
2
0
1000
Drain - Source Voltage : VDS [V]
0
200
400
600
Drain - Source Voltage : VDS [V]
Fig.20 Switching Characteristics
Fig.21 Dynamic Input Characteristics
10000
10
R
N
ot
Switching Time : t [ns]
1000
100
10
0.01
td(off)
Gate - Source Voltage : VGS [V]
VDD ≒ 400V
VGS = 10V
RG= 10W
Ta = 25ºC
Pulsed
tf
td(on)
tr
0.1
1
10
8
6
4
2
0
100
Ta = 25ºC
VDD= 400V
ID= 10A
Pulsed
0 5 10 15 20 25 30 35 40 45 50 55 60 65
Total Gate Charge : Qg [nC]
Drain Current : ID [A]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
800
10/13
2013.04 - Rev.A
Data Sheet
R8010ANX
lElectrical characteristic curves
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
Reverse Recovery Time : trr [ns]
10
1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta= -25ºC
0.1
0.01
0.0
1000
e
N co
ew m
m
D
es en
ig de
ns d
f
Inverse Diode Forward Current : IS [A]
VGS=0V
Pulsed
or
10000
100
0.5
1.0
100
10
1.5
Source - Drain Voltage : VSD [V]
Ta=25ºC
VGS = 0V
di / dt = 100A / ms
Pulsed
0.1
1
10
N
ot
R
Inverse Diode Forward Current : IS [A]
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
11/13
2013.04 - Rev.A
Data Sheet
R8010ANX
lMeasurement circuits
Fig.1-2 Switching Waveforms
e
N co
ew m
m
D
es en
ig de
ns d
f
or
Fig.1-1 Switching Time Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
Fig.4-1 dv/dt Measurement Circuit
Fig.4-2 dv/dt Waveform
N
ot
R
Fig.2-1 Gate Charge Measurement Circuit
Fig.5-1 di/dt Measurement Circuit
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
Fig.5-2 di/dt Waveform
12/13
2013.04 - Rev.A
Data Sheet
R8010ANX
lDimensions (Unit : mm)
D
TO-220FM
E
A
E1
A1
A
A2
e
N co
ew m
m
D
es en
ig de
ns d
f
A4
or
F
φp
b1
L
Q
c
e
b
DIM
N
ot
R
A
A1
A2
A4
b
b1
c
D
E
e
E1
F
L
p
Q
x
x
A
MILIMETERS
MIN
MAX
16.60
17.60
1.80
2.20
14.80
15.40
6.80
7.20
0.70
0.85
1.10
1.50
0.70
0.85
9.90
10.30
4.40
4.80
2.54
2.70
3.00
2.80
3.20
11.50
12.50
3.00
3.40
2.10
3.10
0.38
INCHES
MIN
0.654
0.071
0.583
0.268
0.028
0.043
0.028
0.390
0.173
MAX
0.693
0.087
0.606
0.283
0.033
0.059
0.033
0.406
0.189
0.100
0.106
0.110
0.453
0.118
0.083
-
0.118
0.126
0.492
0.134
0.122
0.015
Dimension in mm / inches
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
13/13
2013.04 - Rev.A
Notice
Notes
1) The information contained herein is subject to change without notice.
or
2) Before you use our Products, please contact our sales representative and verify the latest specifications :
e
N co
ew m
m
D
es en
ig de
ns d
f
3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communication, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.
7) The Products specified in this document are not designed to be radiation tolerant.
8) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, servers, solar cells, and power transmission systems.
9) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
R
12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
N
ot
13) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
14) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
R1102A
工商网监
湘ICP备2023018690号
