Data Sheet
1.5V Drive Pch MOSFET
RAF040P01
Structure Silicon P-channel MOSFET Dimensions (Unit : mm)
TUMT3
0.2Max.
Features 1) Low on-resistance. 2) Low voltage drive(1.5V drive). 3) Small surface mount package(TUMT3).
Abbreviated symbol : SF
Application Switching
Packaging specifications Package Type Code Basic ordering unit (pieces) RAF040P01 Taping TCL 3000
Inner circuit
(3)
∗2
∗1
(1) Gate (2) Source (3) Drain
(1)
(2)
1 ESD PROTECTION DIODE 2 BODY DIODE
Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature
*1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board.
Limits 12 0to8 4
*1
Unit V V A A A A W C C
VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP IS ISP PD Tch Tstg
16 0.6 16 0.8 150 55 to 150
*1 *2
Thermal resistance Parameter Channel to Ambient
*Mounted on a ceramic board.
Symbol Rth (ch-a)*
Limits 156
Unit C / W
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2011.08 - Rev.A
RAF040P01
Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
*Pulsed
Symbol IGSS IDSS VGS (th) RDS (on)* Min. 12 0.3 l Yfs l * Ciss Coss Crss td(on) tr * * 5.5 Typ. 22 27 35 40 4000 410 400 15 43 240 120 37 6.0 5.5 Max. 10 10 1.0 30 38 53 68 S pF pF pF ns ns ns ns nC nC nC m Unit A V A V Conditions VGS=8V, VDS=0V ID=1mA, V GS=0V VDS=12V, VGS=0V VDS=6V, ID=1mA ID=4A, VGS=4.5V ID=2A, VGS=2.5V ID=2A, VGS=1.8V ID=0.8A, VGS=1.5V VDS=6V, ID=4A VDS=6V VGS=0V f=1MHz VDD 6V, ID=2A VGS=4.5V RL=3 RG=10 VDD 6V, ID=4A VGS=4.5V
Data Sheet
Drain-source breakdown voltage V(BR)DSS
td(off) * tf * Qg * Qgs * Qgd *
Body diode characteristics (Source-Drain) Parameter Forward Voltage
*Pulsed
Symbol VSD *
Min. -
Typ. -
Max. 1.2
Unit V
Conditions Is=4A, VGS=0V
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2011.08 - Rev.A
RAF040P01
Electrical characteristic curves (Ta=25C)
Fig.1 Typical Output Characteristics (Ⅰ) 4 VGS=-4.5V VGS=-2.5V 3 Drain Current : -ID [A] VGS=-1.8V VGS=-1.5V Ta=25°C pulsed VGS=-1.2V
Data Sheet
Fig.2 Typical Output Characteristics (Ⅱ) 4 VGS=-1.2V
3 Drain Current : -ID [A]
VGS=-4.5V VGS=-2.5V VGS=-1.8V
Ta=25°C pulsed
2
2
VGS=-1.5V
1 VGS=-1.0V
1 VGS=-1.0V
0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : -VDS [V]
0 0 2 4 6 8 10 Drain-Source Voltage : -VDS [V]
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=-1.5V VGS=-1.8V VGS=-2.5V VGS=-4.5V
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=-4.5V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
100
100
10
10
1 0.01
0.1
1
10
1 0.01
0.1
1
10
Drain Current : -ID [A]
Drain Current : -ID [A]
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=-2.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1000
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
VGS=-1.8V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ]
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
100
100
10
10
1 0.01
0.1
1
10
1 0.01
0.1
1
10
Drain Current : -ID [A]
Drain Current : -ID [A]
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2011.08 - Rev.A
RAF040P01
Data Sheet
Fig.7 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=-1.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100
Fig.8 Forward Transfer Admittance vs. Drain Current
VDS=-6V pulsed
Forward Transfer Admittance Yfs [S]
100
10
10
1
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
1 0.01
0.1
1
10
0.1 0.01
0.1
1
10
Drain Current : -ID [A]
Drain Current : -ID [A]
Fig.9 Typical Transfer Characteristics 10 VDS=-6V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10
Fig.10 Source Current vs. Source-Drain Voltage
VGS=0V pulsed
1 Drain Currnt : -ID [A]
Source Current : -Is [A]
1
Ta=125°C Ta=75°C Ta=25°C Ta=-25°C
0.1
0.1
0.01
0.001 0.0 0.5 1.0 1.5 2.0 Gate-Source Voltage : -VGS [V]
0.01 0.0 0.5 1.0 1.5 2.0 Source-Drain Voltage : -VSD [V]
Fig.11 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 100 Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] 80 ID=-0.8A Switching Time : t [ns] ID=-4.0A 100 1000
Fig.12 Switching Characteristics
td(off)
tf
60
tr
40
10
td(on) VDD≒-6V VGS=-4.5V RG=10Ω Ta=25°C Pulsed
20
0 0 2 4 6 8 Gate-Source Voltage : -VGS [V]
1 0.01 0.1 1 10 Drain Current : -ID [A]
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2011.08 - Rev.A
RAF040P01
Data Sheet
Fig.13 Dynamic Input Characteristics 5 Ta=25°C VDD=-6V ID=-4A Pulsed Capacitance : C [pF] 10000
Fig.14 Typical Capacitance vs. Drain-Source Voltage
Ta=25°C f=1MHz VGS=0V Ciss
4 Gate-Source Voltage : -VGS [V]
3
1000 Coss
2
1 Crss
0 0 10 20 30 40 50 Total Gate Charge : -Qg [nC]
100 0.01 0.1 1 10 100 Drain-Source Voltage : -VDS [V]
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2011.08 - Rev.A
RAF040P01
Measurement circuits
Data Sheet
Pulse width
ID VGS RL D.U.T. RG VDD VDS
VGS
10% 50% 10%
90%
50% 10% 90%
VDS
90% td(on) ton tr td(off) toff
tf
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
VG
ID VGS RL IG(Const.) D.U.T. VDD
VDS
VGS Qgs
Qg
Qgd
Charge
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit.
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2011.08 - Rev.A
Notice
Notes
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