RAF040P01

RAF040P01

  • 厂商:

    ROHM(罗姆)

  • 封装:

  • 描述:

    RAF040P01 - 1.5V Drive Pch MOSFET - Rohm

  • 数据手册
  • 价格&库存
RAF040P01 数据手册
Data Sheet 1.5V Drive Pch MOSFET RAF040P01  Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) TUMT3 0.2Max. Features 1) Low on-resistance. 2) Low voltage drive(1.5V drive). 3) Small surface mount package(TUMT3). Abbreviated symbol : SF  Application Switching  Packaging specifications Package Type Code Basic ordering unit (pieces) RAF040P01 Taping TCL 3000   Inner circuit (3) ∗2 ∗1 (1) Gate (2) Source (3) Drain (1) (2) 1 ESD PROTECTION DIODE 2 BODY DIODE  Absolute maximum ratings (Ta = 25C) Symbol Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Limits 12 0to8 4 *1 Unit V V A A A A W C C VDSS Continuous Pulsed Continuous Pulsed VGSS ID IDP IS ISP PD Tch Tstg 16 0.6 16 0.8 150 55 to 150 *1 *2  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 156 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.08 - Rev.A RAF040P01  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed   Symbol IGSS IDSS VGS (th) RDS (on)* Min. 12 0.3 l Yfs l * Ciss Coss Crss td(on) tr * * 5.5 Typ. 22 27 35 40 4000 410 400 15 43 240 120 37 6.0 5.5 Max. 10 10 1.0 30 38 53 68 S pF pF pF ns ns ns ns nC nC nC m Unit A V A V Conditions VGS=8V, VDS=0V ID=1mA, V GS=0V VDS=12V, VGS=0V VDS=6V, ID=1mA ID=4A, VGS=4.5V ID=2A, VGS=2.5V ID=2A, VGS=1.8V ID=0.8A, VGS=1.5V VDS=6V, ID=4A VDS=6V VGS=0V f=1MHz VDD 6V, ID=2A VGS=4.5V RL=3 RG=10 VDD 6V, ID=4A VGS=4.5V Data Sheet Drain-source breakdown voltage V(BR)DSS td(off) * tf * Qg * Qgs * Qgd * Body diode characteristics (Source-Drain) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=4A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.08 - Rev.A RAF040P01 Electrical characteristic curves (Ta=25C) Fig.1 Typical Output Characteristics (Ⅰ) 4 VGS=-4.5V VGS=-2.5V 3 Drain Current : -ID [A] VGS=-1.8V VGS=-1.5V Ta=25°C pulsed VGS=-1.2V   Data Sheet Fig.2 Typical Output Characteristics (Ⅱ) 4 VGS=-1.2V 3 Drain Current : -ID [A] VGS=-4.5V VGS=-2.5V VGS=-1.8V Ta=25°C pulsed 2 2 VGS=-1.5V 1 VGS=-1.0V 1 VGS=-1.0V 0 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage : -VDS [V] 0 0 2 4 6 8 10 Drain-Source Voltage : -VDS [V] Fig.3 Static Drain-Source On-State Resistance vs. Drain Current 1000 Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] VGS=-1.5V VGS=-1.8V VGS=-2.5V VGS=-4.5V Fig.4 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=-4.5V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 100 10 10 1 0.01 0.1 1 10 1 0.01 0.1 1 10 Drain Current : -ID [A] Drain Current : -ID [A] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=-2.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1000 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current VGS=-1.8V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 100 10 10 1 0.01 0.1 1 10 1 0.01 0.1 1 10 Drain Current : -ID [A] Drain Current : -ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.08 - Rev.A RAF040P01   Data Sheet Fig.7 Static Drain-Source On-State Resistance vs. Drain Current 1000 VGS=-1.5V pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 100 Fig.8 Forward Transfer Admittance vs. Drain Current VDS=-6V pulsed Forward Transfer Admittance Yfs [S] 100 10 10 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 1 0.01 0.1 1 10 0.1 0.01 0.1 1 10 Drain Current : -ID [A] Drain Current : -ID [A] Fig.9 Typical Transfer Characteristics 10 VDS=-6V pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 Fig.10 Source Current vs. Source-Drain Voltage VGS=0V pulsed 1 Drain Currnt : -ID [A] Source Current : -Is [A] 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.1 0.01 0.001 0.0 0.5 1.0 1.5 2.0 Gate-Source Voltage : -VGS [V] 0.01 0.0 0.5 1.0 1.5 2.0 Source-Drain Voltage : -VSD [V] Fig.11 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 100 Ta=25°C pulsed Static Drain-Source On-State Resistance RDS(on) [mΩ] 80 ID=-0.8A Switching Time : t [ns] ID=-4.0A 100 1000 Fig.12 Switching Characteristics td(off) tf 60 tr 40 10 td(on) VDD≒-6V VGS=-4.5V RG=10Ω Ta=25°C Pulsed 20 0 0 2 4 6 8 Gate-Source Voltage : -VGS [V] 1 0.01 0.1 1 10 Drain Current : -ID [A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.08 - Rev.A RAF040P01   Data Sheet Fig.13 Dynamic Input Characteristics 5 Ta=25°C VDD=-6V ID=-4A Pulsed Capacitance : C [pF] 10000 Fig.14 Typical Capacitance vs. Drain-Source Voltage Ta=25°C f=1MHz VGS=0V Ciss 4 Gate-Source Voltage : -VGS [V] 3 1000 Coss 2 1 Crss 0 0 10 20 30 40 50 Total Gate Charge : -Qg [nC] 100 0.01 0.1 1 10 100 Drain-Source Voltage : -VDS [V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.08 - Rev.A RAF040P01  Measurement circuits   Data Sheet Pulse width ID VGS RL D.U.T. RG VDD VDS VGS 10% 50% 10% 90% 50% 10% 90% VDS 90% td(on) ton tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2 Switching Waveforms VG ID VGS RL IG(Const.) D.U.T. VDD VDS VGS Qgs Qg Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.08 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A
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