RAQ045P01

Data Sheet 1.5V Drive Pch MOSFET RAQ045P01  Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) TSMT6 Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive.(1.5V) Abbreviated symbol : SC  Application Switching  Packaging specifications Type Package Code Taping TCR 3000   Inner circuit (6) (5) (4) Basic ordering unit (pieces) RAQ045P01 ∗2 ∗1  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits 12 0 to 8 4.5 *1 Unit V V A A A A W C C (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP IS ISP PD Tch Tstg 18 1 18 1.25 150 55 to 150 *1 *2  Thermal resistance Parameter Channel to Ambient *Mounted on a ceramic board. Symbol Rth (ch-a)* Limits 100 Unit C / W www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/6 2011.04 - Rev.A RAQ045P01  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge *Pulsed 　 Symbol IGSS IDSS VGS (th) * RDS (on) Min. 12 0.3 l Yfs l* Ciss Coss Crss td(on) * tr * td(off) * tf * Qg * Qgs * Qgd * 5.5 Typ. 22 28 38 50 4200 350 330 16 60 400 150 40 6.5 6.0 Max. 10 10 1.0 30 39 57 100 S pF pF pF ns ns ns ns nC nC nC m Unit A V A V Conditions VGS=8V, VDS=0V ID=1mA, VGS=0V VDS=12V, VGS=0V VDS=6V, ID=1mA ID=4.5A, VGS=4.5V ID=2.2A, VGS=2.5V ID=2.2A, VGS=1.8V ID=0.9A, VGS=1.5V ID=4.5A, VDS=6V VDS=6V VGS=0V f=1MHz ID=2.2A, VDD 6V VGS=4.5V RL=2.7 RG=10 ID=4.5A VDD 6V VGS=4.5V Data Sheet Drain-source breakdown voltage V(BR)DSS Body diode characteristics (Source-Drain) (Ta = 25C) Parameter Forward Voltage *Pulsed Symbol VSD * Min. - Typ. - Max. 1.2 Unit V Conditions Is=4.5A, VGS=0V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/6 2011.04 - Rev.A RAQ045P01 Electrical characteristic curves (Ta=25C) Fig.1 Typical output characteristics(Ⅰ) 4.5 4 3.5 DRAIN CURRENT : -ID[A] 3 2.5 2 1.5 1 0.5 0 0 0.2 0.4 0.6 0.8 1 DRAIN-SOURCE VOLTAGE : -VDS[V] VGS= -1.0V Ta=25°C Pulsed 　 Data Sheet Fig.2 Typical output characteristics(Ⅱ) 4.5 4 3.5 DRAIN CURRENT : -ID[A] 3 2.5 2 1.5 1 VGS= -1.0V 0.5 0 0 2 4 6 8 10 DRAIN-SOURCE VOLTAGE : -VDS[V] VGS= -2.0V VGS= -1.8V VGS= -1.5V VGS= -4.5V VGS= -4.0V VGS= -2.5V Ta=25°C Pulsed VGS= -4.5V VGS= -4.0V VGS= -2.5V VGS= -2.0V VGS= -1.8V VGS= -1.5V VGS= -1.2V VGS= -1.2V Fig.3 Typical Transfer Characteristics 10 VDS= -6V Pulsed 1 DRAIN CURRENT : -ID[A] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 100 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Ta=25°C Pulsed VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 0.1 0.01 0.001 0 0.5 1 1.5 2 GATE-SOURCE VOLTAGE : -VGS[V] Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) 100 VGS= -4.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 100 VGS= -2.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/6 2011.04 - Rev.A RAQ045P01 　 Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS= -1.5V Pulsed Data Sheet 100 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] VGS= -1.8V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 10 0.1 1 DRAIN-CURRENT : -ID[A] 10 Fig.9 Forward Transfer Admittance vs. Drain Current 100 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] VDS= -6V Pulsed REVERSE DRAIN CURRENT : -Is [A] 1 10 VGS=0V Pulsed Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage 10 0.1 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.01 0.1 0.1 1 DRAIN-CURRENT : -ID[A] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage 100 Ta=25°C Pulsed ID= -4.5A 60 ID= -0.9A 40 SWITCHING TIME : t [ns] 80 10 0.001 0 0.5 1 1.5 SOURCE-DRAIN VOLTAGE : -VSD [V] Fig.12 Switching Characteristics 1000 Ta=25°C VDD= -6V VGS=-4.5V RG=10W Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] td(off) 100 tf tr td(on) 20 0 0 2 4 6 8 GATE-SOURCE VOLTAGE : -VGS[V] 10 0.01 0.1 1 10 100 DRAIN-CURRENT : -ID[A] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/6 2011.04 - Rev.A RAQ045P01 　 Data Sheet Fig.13 Dynamic Input Characteristics 5 10000 Fig.14 Typical Capacitance vs. Drain-Source Voltage Ciss GATE-SOURCE VOLTAGE : -VGS [V] 4 CAPACITANCE : C [pF] 3 1000 Coss 2 Ta=25°C VDD= -6V ID= -4.5A RG=10W Pulsed 0 5 10 15 20 25 30 35 40 45 50 1 Ta=25°C f=1MHz VGS=0V 100 0.01 0.1 1 Crss 0 10 100 TOTAL GATE CHARGE : Qg [nC] DRAIN-SOURCE VOLTAGE : -VDS[V] www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5/6 2011.04 - Rev.A RAQ045P01  Measurement circuits 　 Pulse Width Data Sheet VGS ID RL D.U.T. VDS VGS 10% 50% 10% 90% 50% 10% 90% RG VDD VDS td(on) ton 90% tr td(off) toff tf Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms VG ID VGS RL IG(Const.) D.U.T. VDD VDS Qg VGS Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform  Notice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 6/6 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A