RB050L-40_11

Data Sheet Shottky barrier diode RB050L-40 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 2.6±0.2 Features 1) Small power mold type. (PMDS) 2) Low IR 3) High reliability. 2.0 4.5±0.2 1.2±0.3 3 ① 5 ② 0.1±0.02 　　　 0.1 5.0±0.3 Construction Silicon epitaxial planar 1.5±0.2 2.0±0.2 PMDS Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date Taping specifications(Unit : mm) 2.0±0.05 4.0±0.1 φ1.55±0.05 0.3 5.5±0.05 1.75±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings(Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward voltage Forward current surge peak (60Hz 1cyc) ・ Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 40 40 3 70 125 40 to 125 Unit V V A A °C °C (*1)Mounted on epoxy board. 180°Half sine wave Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF1 VF2 IR Min. - Typ. - Max. 0.55 0.50 1 Unit V V mA IF=3.0A IF=1.5A VR=40V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 5.3±0.1 　 0.05 9.5±0.1 Conditions 2011.04 - Rev.D 12±0.2 4.2 RB050L-40 Data Sheet Electrical characteristic curves (Ta=25°C) 10 Ta=75℃ 1000000 100000 1000 f=1MHz Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 10000 1000 100 10 1 0.1 0.01 0 5 10 15 20 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 40 1 Ta=125℃ Ta=25℃ 100 Ta=-25℃ 0.1 10 0.01 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 25 30 35 1 0 5 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 530 100 600 Ta=25℃ VR=40V n=30pcs 590 580 570 560 550 540 530 520 510 500 IR DISPERSION MAP Ct DISPERSION MAP AVE:579.1pF Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 520 510 500 AVE:503.8mV 490 480 70 60 50 40 30 20 10 0 AVE:9.069uA VF DISPERSION MAP 200 20 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=3A n=30pcs 90 80 REVERSE RECOVERY TIME:trr(ns) AVE:157.0A 200 PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 150 15 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 150 8.3ms 8.3ms 1cyc 100 Ifsm 50 8.3ms 0 1cyc 10 100 5 AVE:9.3ns 50 0 IFSM DISRESION MAP trr DISPERSION MAP 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 300 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 Mounted on epoxy board 5 Rth(j-a) 4 PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 0.1 1 Ifsm t FORWARD POWER DISSIPATION:Pf(W) 100 Rth(j-c) IM=100mA IF=1A D=1/2 3 Sin(θ＝180) 2 1 0 DC 10 1 1ms time 300us 10 100 0.1 0.001 0.1 10 1000 0 1 TIME:t(ms) IFSM-t CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS 2 3 4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 5 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.D RB050L-40 Data Sheet 10 7 6 0A 0V t T 4 3 2 1 Sin(θ＝180) 0 0 25 50 75 100 DC D=1/2 Io 7 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 8 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 5 VR D=t/T VR=20V Tj=125℃ 6 5 4 3 2 1 0 DC 0A 0V Io t T VR D=t/T VR=20V Tj=125℃ 6 D=1/2 4 2 0 0 10 20 Sin(θ＝180) 30 40 DC D=1/2 Sin(θ＝180) 125 0 25 50 75 100 125 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 AVE:17.6kV 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.D Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A