RB051L-40

RB051L-40 Diodes Schottky barrier diode RB051L-40 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) 2.0 2.6±0.2 Features 1) Small power mold type. (PMDS) 2) Low IR. 3) High reliability. 2.0 4.5±0.2 1.2±0.3 3 ① 1 ② 0.1±0.02 　　　 0.1 5.0±0.3 1.5±0.2 2.0±0.2 PMDS Structure Construction Silicon epitaxial planar ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.3 5.5±0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forwarfd current Forward current surge peak （60Hz・1cyc） Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 40 20 3 70 125 -40 to +125 5.3±0.1 　 0.05 9.5±0.1 Unit V V A A ℃ ℃ (*1) Mounted on epoxyboard. 180°Half sine wave Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF1 VF2 IR1 IR2 Min. Typ. Max. 0.35 0.45 1 150 Unit V V mA µA Conditions IF=1.0A IF=3.0A VR=20V VR=15V Rev.B 12±0.2 4.2 1/3 RB051L-40 Diodes Electrical characteristic curves (Ta=25°C) 10 Ta=75℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 1 Ta=125℃ Ta=25℃ Ta=-25℃ 1000000 100000 10000 1000 100 10 1 0 100 200 300 400 500 600 0 5 10 15 20 25 30 35 40 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 f=1MHｚ Ta=75℃ Ta=25℃ Ta=-25℃ 0.1 100 0.01 0.001 10 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 400 FORWARD VOLTAGE:VF(mV) 390 380 370 360 AVE:383.2mV 350 VF DISPERSION MAP Ta=25℃ IF=3A n=30pcs 1000 900 REVERSE CURRENT:IR(uA) 800 700 600 500 400 300 200 100 0 AVE:110.0uA CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ VR=20V n=30pcs 900 890 880 870 860 850 840 830 820 810 800 AVE:850.8pF Ta=25℃ f=1MHz VR=0V n=10pcs IR DISPERSION MAP Ct DISPERSION MAP 300 PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 AVE:186.0A Ifsm 1cyc 8.3ms RESERVE RECOVERY TIME:trr(ns) 30 PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 10 5 0 IFSM DISRESION MAP trr DISPERSION MAP AVE:11.6ns Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 300 250 200 150 100 50 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Ifsm 8.3ms 8.3ms 1cyc 300 PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 1 10 100 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 Mounted on epoxy board Rth(j-a) FORWARD POWER DISSIPATION:Pf(W) 3 Ifsm t 100 2 Sin(θ＝180) 1 D=1/2 10 IM=100mA Rth(j-c) IF=1A DC 1 1ms time 300us 0.1 0.001 0 TIME:t(s) Rth-t CHARACTERISTICS 0.1 10 1000 0 1 2 3 4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 5 TIME:t(ms) IFSM-t CHARACTERISTICS Rev.B 2/3 RB051L-40 Diodes 7 6 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 5 0A 0V t T Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) VR D=t/T VR=20V Tj=125℃ 5 DC 4 D=1/2 4 DC D=1/2 REVERSE POWER DISSIPATION:PR (W) 5 4 D=1/2 3 2 1 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS DC 3 3 Sin(θ＝180) 2 0A 0V Io t T 0 VR D=t/T VR=20V Tj=125℃ 125 2 Sin(θ＝180) 1 1 Sin(θ＝180) 40 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:15.1kV ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1