RB051L-40_11

Data Sheet Schottky Barrier Diode RB051L-40  Applications General rectification  Dimensions (Unit : mm)  Land size figure (Unit : mm) 2.0 2.6±0.2  Features 1)Small power mold type.（PMDS） 2)Low VF 3)High reliability 2.0 ① ② 0.1±0.02 　　　 0.1 5.0±0.3 3 1 4.5±0.2 1.2±0.3  Construction Silicon epitaxial planar 1.5±0.2 2.0±0.2 PMDS  Structure ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date  Taping specifications (Unit : mm) 2.0±0.05 4.0±0.1 φ1.55±0.05 0.3 5.5±0.05 1.75±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forwarfd current Io IFSM Forward current surge peak （60Hz・1cyc） Junction temperature Tj Storage temperature Tstg (*1) Mounted on epoxyboard. 180°Half sine wave Limits 40 20 3 70 125 40 to 125 Unit V V A A °C °C Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF 1 VF 2 IR1 IR2 Min. - Typ. - Max. 0.35 0.45 1 150 Unit V V mA μA IF=1.0A IF=3.0A VR=20V VR=15V 5.3±0.1 　 0.05 9.5±0.1 Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.B 12±0.2 4.2 RB051L-40 Data Sheet 10 1000000 Ta=75℃ 100000 10000 1000 100 10 1 0 100 200 300 400 500 600 0 5 10 15 20 25 30 35 40 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS Ta=125℃ 1000 f=1MHｚ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) 1 Ta=125℃ Ta=25℃ Ta=-25℃ Ta=75℃ Ta=25℃ Ta=-25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0.1 100 0.01 0.001 10 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 400 1000 900 Ta=25℃ VR=20V n=30pcs 890 880 870 860 850 840 830 820 810 800 AVE:850.8pF Ta=25℃ f=1MHz VR=0V n=10pcs FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 800 700 600 500 400 300 200 100 0 AVE:110.0uA 380 370 360 AVE:383.2mV 350 VF DISPERSION MAP IR DISPERSION MAP CAPACITANCE BETWEEN TERMINALS:Ct(pF) 390 Ta=25℃ IF=3A n=30pcs 900 Ct DISPERSION MAP 300 30 25 20 15 10 5 0 IFSM DISRESION MAP trr DISPERSION MAP AVE:11.6ns 300 PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 PEAK SURGE FORWARD CURRENT:IFSM(A) Ifsm 1cyc 8.3ms REVERSE RECOVERY TIME:trr(ns) Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 250 200 150 100 50 0 1 Ifsm 8.3ms 8.3ms 1cyc AVE:186.0A 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 300 PEAK SURGE FORWARD CURRENT:IFSM(A) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 1000 Mounted on epoxy board Rth(j-a) 3 250 200 150 100 50 0 1 10 Ifsm t FORWARD POWER DISSIPATION:Pf(W) 100 2 Sin(θ＝180) 1 D=1/2 10 IM=100mA Rth(j-c) IF=1A DC 1 1ms time 300us 100 0.1 0.001 0 TIME:t(s) Rth-t CHARACTERISTICS 0.1 10 1000 0 1 2 3 4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 5 TIME:t(ms) IFSM-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.B RB051L-40 Data Sheet 7 6 5 0A 0V Io t T 5 DC AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 5 4 D=1/2 3 2 1 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR C HARACTERISTICS DC DC D=1/2 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 4 3 VR D=t/T VR=20V Tj=125℃ 4 D=1/2 3 Sin(θ＝180) 2 0A 0V Io t T 0 VR D=t/T VR=20V Tj=125℃ 125 2 Sin(θ＝180) 1 1 Sin(θ＝180) 40 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 0 25 50 75 100 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ AVE:15.1kV ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.B Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A