RB053L-30

RB053L-30 Diodes Schottky barrier diode RB053L-30 Applications High frequency rectification For switching power supply External dimensions (Units : mm) 1.5±0.2 CATHODE MARK Features 1) Compact power mold type. (PMDS) 2) Ultra low VF / Low IR. 3) VRM=30V guaranteed. 4.5±0.2 1.2±0.3 5 6 0.1 +0.02 −0.1 2.6±0.2 2.0±0.2 Construction Silicon epitaxial planar ROHM : PMDS EIAJ : − JEDEC : SOD-106 , ·····Date of manufacture EX. 1999.12→9, C Absolute maximum ratings (Ta = 25°C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current ∗ Peak forward surge current (60Hz · 1 ) Junction temperature Storage temperature Symbol VRM VR IO IFSM Tj Tstg Limits 30 30 3.0 70 125 −40~+125 Unit V V A A °C °C ∗TC Max. = 90°C when mounted on alumina PCBs. Electrical characteristics (Ta = 25°C) Parameter Forward voltage Reverse current Symbol VF IR1 IR2 Min. − − − Typ. − − − Max. 0.42 90 200 Unit V µA µA IF=3.0A VR=15V VR=30V Conditions 5.0±0.3 RB053L-30 Diodes Electrical characteristic curves (Ta = 25°C) 10 100m TERMINAL CAPACITANCE : CT (pF) 1000 Ta=125°C FORWARD CURRENT : IF (A) REVERSE CURRENT : IR (A) 1 2 =1 Ta 10m Ta=75°C 1m 5° C 100m Ta =7 5° Ta= C 25° C 100µ Ta=25°C 10m 10µ 1m 0 0.1 0.2 0.3 0.4 0.5 1µ 0 10 20 30 40 100 0 10 20 30 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics AVERAGE RECTIFIED FORWARD CURRENT : IO (A) AVERAGE RECTIFIED FORWARD CURRENT : IO (A) DC D=0.8 IF IO Tp T D=Tp / T VR=VRM / 2 DC D=0.8 Tp FORWARD POWER DISSIPATION : PF (W) 5.0 5.0 IF IO T 1.4 D=0.8 DC 1.2 1.0 0.8 0.6 D=0.1 D=0.05 sine D=0.3 D=0.2 4.0 D=0.5 4.0 D=0.5 D=Tp / T VR=VRM / 2 D=0.5 3.0 sine D=0.3 D=0.2 3.0 sine wave D=0.3 D=0.2 2.0 D=0.1 D=0.05 2.0 D=0.1 D=0.05 IF 0.4 Tp IO T D=Tp / T Tj=Tj Max. 1.0 1.0 0.2 0 0 0 0 25 50 75 100 125 0 0 25 50 75 100 125 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 AMBIENT TEMPERATURE : Ta (°C) LEAD TEMPERATURE : TL (°C) AVERAGE RECTIFIED FORWARD CURRENT : IO (A) Fig.4 Derating curve (IO - Ta) (When mounted on alumina PCBs) Fig.5 Derating curve (IO - TL) (When mounted on alumina PCBs) Fig.6 Forward power dissipation characteristics AVERAGE RECTIFIED FORWARD CURRENT : IO (A) REVERSE POWER DISSIPATION : PR (W) 0.30 VR 5.0 DC IF 0.25 0.20 0.15 0.10 Tj=Tj Max. 0 VR D=0.05 D=0.1 D=0.2 D=0.3 D=0.5 DC D=0.8 IO Tp T D=Tp / T VR=VRM / 2 4.0 D=0.5 Tp T Tj=Tj Max. D=Tp / T 3.0 sine D=0.3 D=0.2 2.0 D=0.1 D=0.05 sine 0.05 D=0.8 1.0 0 0 2 4 6 8 10 12 14 16 18 20 0 0 25 50 75 100 125 REVERSE VOLTAGE : VR (V) AMBIENT TEMPERATURE : Ta (°C) Fig.7 Reverse power dissipation characteristics Fig.8 Derating curve (IO - Ta) (when mounted on glass epoxy PCBs)