RB053L-30TE25

RB053L-30 Diodes Schottky barrier diode RB053L-30 zExternal dimensions (Units : mm) zApplications High frequency rectification For switching power supply 5 4.5±0.2 zFeatures 1) Compact power mold type. (PMDS) 2) Ultra low VF / Low IR. 3) VRM=30V guaranteed. 6 2.0±0.2 2.6±0.2 zConstruction Silicon epitaxial planar ROHM : PMDS EIAJ : − JEDEC : SOD-106 0.1 +0.02 −0.1 , ·····Date of manufacture EX. 1999.12→9, C zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Peak reverse voltage VRM 30 V DC reverse voltage VR 30 V Mean rectifying current ∗ IO 3.0 A IFSM 70 A Junction temperature Tj 125 °C Storage temperature Tstg −40~+125 °C Peak forward surge current (60Hz · 1 ) ∗TC Max. = 90°C when mounted on alumina PCBs. zElectrical characteristics (Ta = 25°C) Parameter Forward voltage Symbol Min. Typ. Max. Unit VF − − 0.42 V IF=3.0A IR1 − − 90 µA VR=15V IR2 − − 200 µA VR=30V Reverse current 5.0±0.3 1.2±0.3 1.5±0.2 CATHODE MARK Conditions RB053L-30 Diodes zElectrical characteristic curves (Ta = 25°C) 10 1000 100m 10m 0.2 0.3 0.4 100µ Ta=25°C 10µ 10 IF IO Tp T D=Tp / T VR=VRM / 2 D=0.5 sine D=0.3 D=0.2 2.0 D=0.1 D=0.05 0 0 25 50 75 100 125 5.0 DC IF sine wave D=0.3 D=0.2 2.0 D=0.1 1.0 D=0.05 0 0 25 Tj=Tj Max. 0 Tp T Tj=Tj Max. D=Tp / T 0.15 VR DC 0.10 sine 0.05 D=0.8 2 4 6 8 75 100 125 10 12 14 16 18 20 REVERSE VOLTAGE : VR (V) Fig.7 Reverse power dissipation characteristics 5.0 IF D=0.8 IO Tp T D=Tp / T VR=VRM / 2 D=0.5 sine 3.0 D=0.3 D=0.2 2.0 D=0.1 D=0.05 1.0 0 0 25 50 75 30 100 AMBIENT TEMPERATURE : Ta (°C) Fig.8 Derating curve (IO - Ta) (when mounted on glass epoxy PCBs) Fig.3 Capacitance between terminals characteristics 1.4 DC D=0.8 1.2 D=0.5 sine D=0.3 1.0 D=0.2 0.8 D=0.1 D=0.05 0.6 IF 0.4 IO Tp 0.2 0 0 T D=Tp / T Tj=Tj Max. 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig.6 Forward power dissipation characteristics DC 4.0 20 AVERAGE RECTIFIED FORWARD CURRENT : IO (A) Fig.5 Derating curve (IO - TL) (When mounted on alumina PCBs) AVERAGE RECTIFIED FORWARD CURRENT : IO (A) VR 0.20 50 LEAD TEMPERATURE : TL (°C) 0.30 0.25 T D=Tp / T VR=VRM / 2 D=0.5 3.0 Fig.4 Derating curve (IO - Ta) (When mounted on alumina PCBs) D=0.05 D=0.1 D=0.2 D=0.3 D=0.5 Tp 4.0 10 REVERSE VOLTAGE : VR (V) IO D=0.8 100 0 40 Fig.2 Reverse characteristics AMBIENT TEMPERATURE : Ta (°C) REVERSE POWER DISSIPATION : PR (W) 30 Fig.1 Forward characteristics DC 0 0 20 REVERSE VOLTAGE : VR (V) 4.0 1.0 Ta=75°C 1m FORWARD VOLTAGE : VF (V) D=0.8 3.0 10m 1µ 0 0.5 AVERAGE RECTIFIED FORWARD CURRENT : IO (A) 5.0 0.1 TERMINAL CAPACITANCE : CT (pF) 100m 1m 0 AVERAGE RECTIFIED FORWARD CURRENT : IO (A) C 2 =1 Ta FORWARD POWER DISSIPATION : PF (W) 5° REVERSE CURRENT : IR (A) 1 Ta =7 5° Ta= C 25° C FORWARD CURRENT : IF (A) Ta=125°C 125