RB055L-30

Data Sheet Schottky Barrier Diode RB055L-30 lApplications General rectification lDimensions (Unit : mm) lLand size figure (Unit : mm) 2.0 2.6±0.2 lFeatures 1)Small power mold type. (PMDS) 2)High reliability 3)Low VF 1.2±0.3 2.0 4.5±0.2 4 ① 5 ② 0 .1±0.02 　　　 0.1 5.0±0.3 1.5±0.2 2.0±0.2 PMDS lConstruction Silicon epitaxial planer ROHM : PMDS ① ② Manufacture Date lStructure lTaping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ 1.55±0.05 1.75±0.1 4.2 0.3 5.5±0.05 φ 1.55 2.9±0.1 4 .0±0.1 2.8MAX lAbsolute maximum ratings (Ta=25C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg (*1) Mounted on Alumina board, Tc=110°C MAX. lElectrical characteristics (Ta=25C) Parameter Symbol VF Forward voltagae Reverse current IR Limits 30 30 3 55 150 -55 to +150 Unit V V A A C C Min. - Typ. - Max. 0.55 50 Unit V μA Conditions IF=3.0A VR=30V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 5.3±0.1 0.05 　 9.5±0.1 1/4 2011.10 - Rev.A 12±0.2 RB055L-30 　 Data Sheet 10 Ta=150°C 100000 Ta=125°C Ta=100°C 10000 REVERSE CURRENT:IR(mA) Ta=150°C 1 FORWARD CURRENT:IF(A) Ta=125°C 0.1 Ta=100°C 1000 Ta=75°C 0.01 100 Ta=75°C 10 Ta=25°C 0.001 Ta=25°C 0.0001 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 1 0 10 20 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 f=1MHz FORWARD VOLTAGE:VF(mV) 500 495 490 485 480 475 470 465 460 455 AVE:479.1mV Ta=25°C IF=3A n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 10 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 450 VF DISPERSION MAP 14 Ta=25°C VR=30V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 490 480 470 460 450 440 430 420 410 400 AVE：444.8pF f=1MHz VR=0V 13 REVERSE CURRENT:IR(mA) 12 11 10 AVE:10.66mA 9 8 IR DISPERSION MAP 390 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A RB055L-30 　 Data Sheet 250 30 IF=0.5A IR=1A Irr=0.25*IR REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 200 25 20 150 AVE：155.5A 100 15 10 AVE:11.5ns 5 IFSM 50 8.3ms 8.3ms 1cyc 0 IFSM DISPERSION MAP 0 trr DISPERSION MAP 1000 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms 1cyc PEAK SURGE FORWARD CURRENT:IFSM(A) 100 250 200 150 100 100 50 10 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 On glass-epoxy substrate TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) Rth(j-a) 100 FORWARD POWER DISSIPATION:Pf(W) 0.25 0.2 D.C. D=1/2 Sin(θ＝180) 0.15 Rth(j-c) 10 0.1 1 0.05 0.1 0.001 0 0.01 0.1 1 10 100 1000 0 0.1 0.2 0.3 0.4 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.10 - Rev.A RB055L-30 　 Data Sheet 5 6 0A 0V D.C. t T Io VR D=t/T VR=15V Tj=150°C 4 REVERSE POWER DISSIPATION:PR (W) DC 3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 5 4 D=1/2 3 Sin(θ＝180) 2 2 D=1/2 1 Sin(θ＝180) 1 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 0 0 25 50 75 100 125 150 CASE TEMPERATURE:Tc(°C) DERATING CURVE (Io-Tc) 30 No break at 30kV 25 ELECTROSTATIC DISCHARGE TEST ESD(KV) 20 15 10 AVE:12.15kV 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.10 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A