RB055L-40_11

Data Sheet Schottky Barrier Diode RB055L-40  Applications General rectification  Dimensions (Unit : mm)  Land size figure (Unit : mm) 2.0 2.6±0.2  Features 1)Small power mold type.（PMDS） 2)Low IR 3)High reliability 1.2±0.3 2.0 ① ② 0.1±0.02 　　　 0.1 1.5±0.2 2.0±0.2 5.0±0.3 5 2 4.5±0.2 PMDS  Construction Silicon epitaxial planar ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date  Structure  Taping specifications (Unit : mm) 2.0±0.05 4.0±0.1 φ1.55±0.05 0.3 5.5±0.05 1.75±0.1 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive peak) VR Reverse voltage (DC) Average rectified forwarfd current Io IFSM Forward current surge peak （60Hz・1cyc） Junction temperature Tj Storage temperature Tstg (*1) Mounted on epoxyboard. 180°Half sine wave Limits 40 40 3 40 150 40 to 150 Unit V V A A °C °C Electrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. - Typ. - Max. 0.65 0.5 Unit V mA IF=3.0A VR=40V 5.3±0.1 　 0.05 9.5±0.1 Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.A 12±0.2 4.2 RB055L-40 Data Sheet Ta=150℃ 10000 10000 Ta=150℃ Ta=125℃ 1000 f=1MHz FORWARD CURRENT:IF(mA) Ta=125℃ Ta=75℃ Ta=-25℃ Ta=25℃ Ta=75℃ 100 10 1 Ta=-25℃ 0.1 0.01 0.001 Ta=25℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 100 10 1 0.1 0 REVERSE CURRENT:IR(uA) 1000 100 10 1 0 10 20 30 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 40 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 100 200 300 400 500 600 700 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 580 100 400 Ta=25℃ VR=30V n=30pcs VR=40V n=30pcs Ta=25℃ FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(uA) 570 560 550 540 530 VF DISPERSION MAP AVE:559.6mV 80 70 60 50 40 30 20 10 0 IR DISPERSION MAP AVE:8.172uA AVE:6.62uA σ:1.9469uA CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=3A n=30pcs 90 390 380 370 360 350 340 330 320 310 300 Ct DISPERSION MAP AVE:329.5pF Ta=25℃ f=1MHz VR=0V n=10pcs 300 30 1000 REVERSE RECOVERY TIME:trr(ns) PEAK SURGE FORWARD CURRENT:IFSM(A) 250 200 150 100 50 0 Ifsm 1cyc 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 25 20 15 AVE:8.20ns 10 5 0 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs Ifsm 8.3ms 8.3ms 1cyc 100 AVE:117.2A 10 1 trr DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS Io-Pf　CHARACTERISTICS 100 IFSM DISPERSION MAP 250 1000 5 Mounted on epoxy board TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) 4.5 Rth(j-a) 4 PEAK SURGE FORWARD CURRENT:IFSM(A) 200 150 100 50 0 1 Ifsm t 100 FORWARD POWER DISSIPATION:Pf(W) 3.5 3 2.5 2 1.5 1 0.5 0 Sin(θ＝180) D=1/2 DC 10 IM=100mA Rth(j-c) IF=1A 1 1ms time 300us 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.1 0.001 0.01 1 10 100 TIME:t(s) Rth-t CHARACTERISTICS 0.1 1000 0 0.5 1 1.5 2 2.5 3 3.5 4 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS 4.5 5 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.A RB055L-40 Data Sheet 0.5 5 4.5 5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.4 4 3.5 3 2.5 2 1.5 1 0.5 0A 0V DC Io t T D=1/2 VR D=t/T VR=20V Tj=150℃ 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) 150 0A 0V Io t T VR D=t/T VR=20V Tj=150℃ D=1/2 DC Sin(θ＝180) REVERSE POWER DISSIPATION:PR (W) 0.3 DC 0.2 0.1 0 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-PR C HARACTERISTICS 40 Sin(θ＝180) D=1/2 Sin(θ＝180) 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 30 ELECTROSTATIC DISCHARGE TEST ESD(KV) No break at 30kV 25 20 AVE:12.8kV 15 10 5 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A