RB056L-40

Schottky Barrier Diode RB056L-40 Applications General rectification Dimensions(Unit : mm)  Land size figure(Unit : mm) 2.0 2.0 Features 1)Small power mold type.(PMDS) 2)Low IR 3)High reliability PMDS Construction Silicon epitaxial planer Structure  Taping specifications(Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 1.75±0.1 0.3 5.5±0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz / 1cyc) Junction temperature Storage temperature (*1)Mounting on epoxi board. (Tc=63CMAX.) Electrical characteristics (Ta=25℃) Parameter Forward voltage Reverse current Symbol VRM VR Io IFSM Tj Tstg Limits 40 40 3 70 150 -40to+150 5.3±0.1 　 0.05 9.5±0.1 Unit V V A A C C 12±0.2 Symbol VF1 VF2 IR Min. - Typ. - Max. 0.67 0.58 50 Unit V V A Conditions IF=3.0A IF=2.0A VR=40V www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 1/3 2010.02 - Rev.A 4.2 RB056L-40 　 Data Sheet Electrical characteristics curves 1000 10000 Ta=75 C Ta=125 C Ta=-25 C 1000 Ta=150 C 1000 Ta=125 C CAPACIT ANCE BETWEEN TERMINALS : Ct(pF) f=1MHz FORWARD CURRENT : IF(mA) REVERSE CURRENT : IR(A) 100 Ta=150 C Ta=25 C 100 10 Ta=75 C 100 Ta=25 C 1 Ta=-25 C 0.1 0.01 10 10 1 0 100 200 300 400 500 600 1 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 REVERSE VOLTAGE : V R(V) VR-Ct CHARACTERISTICS FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE : V R(V) VR-IR CHARACTERISTICS 480 FORWARD VOLTAGE : VF(mV) Ta=25 C IF=1A n=30pcs 20 Ta=25 C VR=40V n=30pcs 0.3 Ta=25 C f=1MHz VR=0V n=30pcs REVERSE CURRENT : IR(uA) 470 CAPACITANCE BETWEEN TERMINAL : Ct(nF) 0.29 460 0.28 10 450 AVE:454.3mV 440 0.27 AVE : 0.281nF 0.26 AVE : 4.08 A 430 0 0.25 Ct DISPERSION MAP VF DISPERSION MAP IR DISPERSION MAP 200 Ifsm 30 1cyc 8.3m RESERVE RECOVERY TIME : trr(ns) 25 20 15 10 5 0 IFSM DISRESION MAP trr DISPERSION MAP AVE : 10.4ns Ta=25 C IF=0.5A IR=1A Irr=0.25*IR n=10pcs 100 PEAK SURGE FORWARD CURRENT : IFSM(A) PEAK SURGE FORWARD CURRENT : IFSM(A) 150 80 60 100 40 Ifsm 50 AVE : 83.0A 20 8.3ms 8.3m 1cyc 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 300 TRANSIENT  THAERMAL IMPEDANCE : Rth ( C/W) PEAK SURGE FORWARD CURRENT : IFSM(A) 250 200 150 100 50 0 0.1 1 10 100 TIME : t(ms) IFSM-t CHARACTERISTICS 1000 On glass-epoxy board 100 Rth(j-a) FORWARD POWER DISSIPATION : Pf(W) 3 Ifsm t 2 Sin(=180) D=1/2 DC 10 IM=100mA Rth(j-c) IF=1A 1 1 1ms time 0 300s 0.1 0.001 0.01 0.1 1 10 TIME : t(s) Rth-t CHARACTERISTICS 100 1000 0 1 2 3 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) Io-Pf CHARACTERISTICS www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 2/3 2010.02 - Rev.A RB056L-40 　 Data Sheet 0.6 0.5 REVERSE POWER DISSIPATION : PR (W) 0.4 0.3 0.2 0.1 0 0 Sin(=180) 10 20 30 REVERSE VOLTAGE : VR(V) VR-PR CHARACTERISTICS 40 DC 5 4.5 AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 4 3.5 3 D=1/2 2.5 2 1.5 1 0.5 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta( C) Derating Curve"(Io-Ta) Sin(=180) DC T Io AVERAGE RECTIFIED FORWARD CURRENT : Io(A) 0A 0V t 7 0A 6 DC 5 T 4 3 2 Sin(=180) 1 0 0 25 50 75 100 125 CASE TEMPARATURE : Tc( C) Derating Curve"(Io-Tc) D=1/2 0V t Io VR D=t/T VR=20V Tj=150 C VR D/t/T VR=200V Tj=150 C D=1/2 30 No break at 30kV ELECTROSTATIC DISCHARGE TEST ESD(KV) 25 20 15 AVE : 7.3kV 10 5 0 C=200pF R=0 C=100pF R=1.5k ESD DISPERSION MAP www.rohm.com ©2010 ROHM Co., Ltd. All rights reserved. 3/3 2010.02 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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